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http://dx.doi.org/10.5695/JKISE.2008.41.4.129

Properties of Nitrogen and Aluminum Codoped ZnO Thin Films Grown by Radio-frequency Magnetron Sputtering  

Cho, Shin-Ho (Department of Electronic Materials Engineering, Silla University)
Cho, Seon-Woog (Department of Electronic Materials Engineering, Silla University)
Publication Information
Journal of the Korean institute of surface engineering / v.41, no.4, 2008 , pp. 129-133 More about this Journal
Abstract
Nitrogen and aluminum codoped ZnO(NAZO) thin films were grown on glass substrates with changing the nitrogen flow ratio by radio-frequency magnetron sputtering. The structural, optical, and electrical properties of the NAZO films were investigated. The surface morphologies and the structural properties of the thin films were analyzed by using the X-ray diffraction and scanning electron microscopy. The NAZO thin film, deposited at nitrogen flow ratio of 0%, showed a strongly c-axis preferred orientation and the lowest resistivity of $3.2{\times}10^{-3}{\Omega}cm$. The intensity of ZnO(002) diffraction peak was decreased gradually with increasing the nitrogen flow ratio. The optical properties of the films were measured by UV-VIS spectrophotometer and the optical transmittances for all the samples were found to be an average 90% in the visible range. Based on the transmittance value, the optical bandgap energy for the NAZO thin film deposited at nitrogen flow ratio of 0% was determined to be 3.46 eV. As for the electrical properties, the carrier concentration and the hall mobility were decreased, but the electrical resistivity was increased as the nitrogen flow ratio was increased.
Keywords
ZnO; RF magnetron sputtering; Nitrogen flow ratio;
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Times Cited By KSCI : 5  (Citation Analysis)
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1 이성훈, 신민근, 변응선, 김도근, 전상조, 구본흔, 한국표면공학회지 . 39 (2006) 250   과학기술학회마을
2 황동현, 손영국, 조신호, 전기전자재료학회논문지, 20 (2007) 318   과학기술학회마을   DOI
3 Y. J. Zeng, Z. Z. Ye, J. G. Lu, L. P. Zhu, D. Y. Li, B. H. Zhao, J. Y. Huang, Appl. Surf. Sci., 249 (2005) 203   DOI   ScienceOn
4 C. Zhang, X. Li, J. Bian, W. Yu, X. Gao, Solid State Comm., 132 (2004) 75   DOI   ScienceOn
5 F. Yakuphanoglu, M. Sekerci, O. F. Ozturk, Opt. Comm., 239 (2004) 275   DOI   ScienceOn
6 박이섭, 이승호, 송풍근, 한국표면공학회지,40 (2007) 107   과학기술학회마을   DOI
7 K. Prabakar, C. Kim, C. Lee, Cryst. Res. Technol., 40 (2005) 1150   DOI   ScienceOn
8 M. L. Tu, Y. K. Su, C. Y. Ma, J. Appl. Phys., 100 (2006) 053705l   DOI   ScienceOn
9 H. S. Kang, B. D. Ahn, J. H. Kim, G. H. Kim, S. H. Lim, H. W. Chang, S. Y. Lee, Appl. Phys. Lett., 88 (2006) 202108l   DOI   ScienceOn
10 S. T. Tan, B. J. Chen, X. W. Sun, W. J. Fan, H.S. Kwok, X. H. Zhang, S. J. Chua, J. Appl. Phys., 98 (2005) 013505l   DOI   ScienceOn
11 손영국, 황동현, 조신호, 한국진공학회지, 16 (2007) 267   과학기술학회마을   DOI
12 A. V. Singh, R. M. Mehra, A. Yoshida, A. Wakahara, J. Appl. Phys., 95 (2004) 3640   DOI   ScienceOn
13 S. Cho, J. Korean Phys. Soc., 49 (2006) 985
14 H. L. Porter, J. F. Muth, J. Narayan, J. V. Foreman, H. O. Everitt, J. Appl. Phys., 100 (2006) 1231021
15 D. C. Look, D. C. Reynolds, C. W. Litton, R. L. Jones, D. B. Eason, G. Cantwell, Appl. Phys. Lett., 81 (2002) 1830   DOI   ScienceOn