• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.290-290
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• 2011

In this study Diamond-like carbon (DLC) films were deposited on p-type Si substrates using a Radio-Frequency magnetron Sputtering system. The DLC film was deposited by bombarding graphite target with a N2/Ar plasma mixture with various conditions: substrate, pressure, deposition time, temperature of substrate, power and ratio of gas mixture. The effect on the conduction and hardness of DLC thin films were investigated. The conduction of DLC films were measured by I-V measurement. In addition, Raman analysis was performed to study the chemical bonding structure. The hardness was measured by Nano indentation. Atomic Force Microscopy was used for determined surface morphology of DLC film.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.329.1-329.1
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• 2014

In this paper, we report electrical, optical and structural properties of Al-doped zinc oxide (AZO) thin films deposited at different substrate temperatures and pressures. The films were prepared by radio frequency (RF) magnetron sputtering on glass substrates in argon (Ar) ambient. The X-ray diffraction analysis showed that the AZO films deposited at room temperature (RT) and 20 Pa were mostly oriented along a-axis with preferred orientation along (100) direction. There was an improvement in resistivity ($3.7{\times}10^{-3}{\Omega}-cm$) transmittance (95%) at constant substrate temperature (RT) and working pressure (20 Pa) using the Hall-effect measurement system and UV-vis spectroscopy, respectively. Our results have promising applications in low-cost transparent electronics, such as the thin-film solar cells and thin-film transistors due to favourable deposition conditions. Furthermore our film deposition method offers a procedure for preparing highly oriented (100) AZO films.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.169-169
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• 2016

In this paper, we report electrical, optical and structural properties of Al-doped zinc oxide (AZO) thin films deposited at different substrate temperatures and pressures. The films were prepared by radio frequency (RF) magnetron sputtering on glass substrates in argon (Ar) ambient. The X-ray diffraction analysis showed that the AZO films deposited at room temperature (RT) and 20 Pa were mostly oriented along a-axis with preferred orientation along (100) direction. There was an improvement in resistivity ($3.7{\times}10^{-3}{\Omega}-cm$) transmittance (95%) at constant substrate temperature (RT) and working pressure (20 Pa) using the Hall-effect measurement system and UV-vis spectroscopy, respectively. Our results have promising applications in low-cost transparent electronics, such as the thin-film solar cells and thin-film transistors due to favourable deposition conditions. Furthermore our film deposition method offers a procedure for preparing highly oriented (100) AZO films.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.53 no.2
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• pp.73-78
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• 2004

AIN thin film has been deposited on the $AI_2$$O_3$substrate with reactive radio frequency( RF) magnetron sputtering method. In this work, elelctromechanical coupling coefficient of AIN thin film was increased with an increase of AIN thin film thickness, and the maximum value was 0.11%. Insertion loss of SAW device was decreased with an increase of AIN thin film thickness and the minimum value was 33［㏈］. SAW velocity of IDTs/AIN/$AI_2$$O_3$structure and IDTs/AIN/$AI_2$$O_3$/Si structure were about 5480［㎧］and 5040［㎧］respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.395-398
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• 2000

Reactive radio frequency (RF)magnetron sputter with incident angle has been used to deposit AlN thin film on a crystalline Si substrate. (002)Preferred orientation of AlN thin film has been obtained at low sputtering pressure. Also it has been shown that depostion rate of AIN thin film is affected by fraction Ar and $N_2$ partial pressure. But substrate temperature didn't affect depostion rate of AIN thin film . As sputtering pressure increased preferred orientation degraded. The internal stress changed from tensile stress to compressive stress as fraction of $N_2$ partial pressure increased. At low nitrogen partial pressure cermet$^{[1]}$ AIN thin film is obtained.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2016.11a
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• pp.3-32
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• 2016

High power impulse magnetron sputtering (HiPIMS) technique has been developed for more than 15 years. It is characterized by its ultra-high peak current and peak power density to obtain unique thin film properties, such as high hardness, good adhesion and tribological performance. However, its low deposition rate makes it hard to be applied in industries. In this work, the development of HiPIMS system and integration of radio frequency (RF) or mid-frequency (MF) power supplies were introduced. Effects of duty cycle and repetition frequency on the microstructure, mechanical property, optical and electrical properties of some binary, ternary and quarternary nitride coatings and oxide thin films were discussed. It can be observed that the deposition rate was effectively increased by the superimposed HiPIMS with RF or MF power. High hardness, good adhesion and sufficient wear resistance can be obtained through a proper adjustment of processing parameters of HiPIMS power system.

• 한국신재생에너지학회:학술대회논문집
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• 2011.11a
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• pp.62.1-62.1
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• 2011

The structural, optical, and electrical properties of Ga-doped ZnO (GZO) thin films on glass substrates grown by radio-frequency(RF) magnetron sputtering were investigated. The flow ratio of Ar was varied as a deposition parameter for growing high-quality GZO thin films. The structural properties and surface morphologies of GZO were characterized by the X-ray diffraction. To analyze the optical properties of GZO, the optical absorbance was measured in the wavelength range of 300-1100 nm by using UV-VIS spectrophotometer. The optical transmittance, absorption coefficient, and optical bandgap energy of GZO thin films were calculated from the measured data. The crystallinity of GZO thin films is improved and the bandgap energy increases from 3.08 to 3.23eV with the increasing Ar flow ratio from 10 to 100 sccm. The average transmittance of the films is over 88% in the visible range. The lowest resistivity of the GZO is $6.215{\times}10^{-4}{\Omega}{\cdot}cm$ and the hall mobility increases with the increasing Ar flow ratio. We can optimize the characteristics of GZO as a transparent electrode for thin film solar cells by controlling Ar flow ratio during deposition process.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.4
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• pp.303-310
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• 2010

We fabricated $La_{0.6}Sr_{0.4}MnO_3$ thin films using radio frequency (RF) magnetron sputtering. They were grown on sapphire substrates with various deposition conditions. After the growth of the $La_{0.6}Sr_{0.4}MnO_3$ thin films, they were annealed at various temperatures to be crystallized. We successfully fabricated single phase $La_{0.6}Sr_{0.4}MnO_3$ thin films with high electrical conductivity. The room temperature resistivity was $1.5{\times}10^{-2}{\Omega}{\cdot}cm$. It can be considered that $La_{0.6}Sr_{0.4}MnO_3$ thin films are one of the feasible candidates for electrodes for integrated device applications.

• Journal of the Korean institute of surface engineering
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• v.46 no.2
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• pp.75-79
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• 2013

A one-step route was developed to fabricate $Cu(In,Ga)Se_2$ (CIGS) thin films by radio frequency (RF) magnetron sputtering from a single quaternary $CuIn_{0.75}Ga_{0.25}Se_2$ target. The effects of the substrate temperatures on the structural and electrical properties of the CIGS layers were investigated by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), energy dispersive X-ray spectroscopy (EDS) and Hall effect measurements. All the deposited films showed a preferential orientation along the (112) direction. The films deposited at $300^{\circ}C$ and $400^{\circ}C$ revealed that chalcopyrite main (112) peak and weak prominent peaks of (220)/(204) and (312)/(116), indicating polycrystalline structures. The element ratio of the deposited film at $300^{\circ}C$ were almost the same as the near-optimum value. The carrier concentration of the films decreased with increasing substrate temperatures.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.248.2-248.2
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• 2014

In this study, the optical properties and structural characteristics of gallium nitride (GaN) thin films prepared by radio frequency (RF) magnetron sputtering were investigated. Auger electron and X-ray photoelectron spectra showed that the deposited films consisted mainly of gallium and nitrogen. The presence of oxygen was also observed. The optical bandgap of the GaN films was measured to be approximately 3.31 eV. The value of the refractive index of the GaN films was found to be 2.36 at a wavelength of 633 nm. X-ray diffraction data revealed that the crystalline phase of the deposited GaN films changed from wurtzite to zinc-blende phase upon decreasing the sputtering gas pressure. Along with the phase change, a strong dependence of the microstructure of the GaN films on the sputtering gas pressure was also observed. The microstructure of the GaN films changed from a voided columnar structure having a rough surface to an extremely condensed structure with a very smooth surface morphology as the sputtering gas pressure was reduced. The relationship between the phase and microstructure changes in the GaN films will be discussed.