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http://dx.doi.org/10.5695/JKISE.2013.46.2.075

Structural and Electrical Properties of Cu(In,Ga)Se2 Thin Films Prepared by RF Magnetron Sputtering without Selenization  

Choi, Jung-Kyu (Department of Materials Science and Engineering, Pusan National University)
Hwang, Dong-Hyun (Department of Materials Science and Engineering, Pusan National University)
Son, Young-Guk (Department of Materials Science and Engineering, Pusan National University)
Publication Information
Journal of the Korean institute of surface engineering / v.46, no.2, 2013 , pp. 75-79 More about this Journal
Abstract
A one-step route was developed to fabricate $Cu(In,Ga)Se_2$ (CIGS) thin films by radio frequency (RF) magnetron sputtering from a single quaternary $CuIn_{0.75}Ga_{0.25}Se_2$ target. The effects of the substrate temperatures on the structural and electrical properties of the CIGS layers were investigated by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), energy dispersive X-ray spectroscopy (EDS) and Hall effect measurements. All the deposited films showed a preferential orientation along the (112) direction. The films deposited at $300^{\circ}C$ and $400^{\circ}C$ revealed that chalcopyrite main (112) peak and weak prominent peaks of (220)/(204) and (312)/(116), indicating polycrystalline structures. The element ratio of the deposited film at $300^{\circ}C$ were almost the same as the near-optimum value. The carrier concentration of the films decreased with increasing substrate temperatures.
Keywords
CIGS; RF Magnetron sputtering; Absorber layer; Solar cells;
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