• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.4
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• pp.285-296
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• 2005

Reduced pressure chemical vapor deposition technology has been used to study SiGe heterostructure epitaxy and device issues, including SiGe relaxed buffers, proper control of Ge component and crystalline defects, two dimensional delta doping, and their influence on electrical properties of devices. From experiments, 2D profiles of B and P presented FWHM of 5 nm and 20 nm, respectively, and doses in 5×10/sup 11/ ∼ 3×10/sup 14/ ㎝/sup -2/ range. The results could be employed to fabricate SiGe/Si heterostructure field effect transistors with both Schottky contact and MOS structure for gate electrodes. I-V characteristics of 2D P-doped HFETs revealed normal behavior except the detrimental effect of crystalline defects created at SiGe/Si interfaces due to stress relaxation. On the contrary, sharp B-doping technology resulted in significant improvement in DC performance by 20-30 ％ in transconductance and short channel effect of SiGe HMOS. High peak concentration and mobility in 2D-doped SiGe heterostructures accompanied by remarkable improvements of electrical property illustrate feasible use for nano-sale FETs and integrated circuits for radio frequency wireless communication in particular.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.25 no.3
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• pp.85-92
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• 2015

SiC crystals are well known for their true potential as high power devices and their crystal growth activity is actively carried out in domestic as well as in abroad. Until now the process to grow this crystal has been done by sublimation technique using radio frequency induction heating method. However in order to get better quality of SiC crystals, the stability of temperature is needed because SiC crystal tends to transform to other polytypes. So, the possibility of SiC crytals growth was evaluated by different heating method. This study aimed to observe whether the resistant heating method would show stable growth and better quality of SiC single crystal than that of RF induction heating. As a result, polycrystalline SiC crystals were grown by the growth rate of 0.02~0.5 mm/hr under the condition of $2100{\sim}2300^{\circ}C$ at the bottom side of the crucible and 10~760 torr. The polycrystalline SiC crystals with 0.25 and 0.5 mm in thickness were grown successfully without seed and characterized by optical stereo microscopic observation.

• The Transactions of the Korean Institute of Power Electronics
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• v.14 no.6
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• pp.440-448
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• 2009

Facility power-line electromagnetic interference (EMI) filters are used to provide radio frequency(RF) isolation between dedicated power distribution services and noise sensitive local power distribution systems. This type of EMI filters generally needs a high current capacity and, in some special applications, a high insertion loss of a minimum 100dB from 14kHz through 10GHz per MIL-STD 220 is required. This paper deals with an analysis and design of a wideband facility power-line EMI filter with the above requirements. The characteristics of the inductor and capacitor at high frequencies are investigated. The characteristics and design method of the facility EMI filter with a high order LC network are also presented. The prototype filter is finally implemented and its performance is verified from the experimental results.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.3
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• pp.185-190
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• 2015

In this study, we fabricated the indium gallium zinc oxide (IGZO), zinc oxide (ZnO), aluminum zinc oxide (AZO). oxide and silver are deposited by magnetron sputtering and thermal evaporator, respectively transparency and energy bandgap were changed by the thickness of silver layer. To fabricate metal oxide metal (OMO) structure, IGZO sputtered on a corning 1,737 glass substrate was used as bottom oxide material and then silver was evaporated on the IGZO layer, finally IGZO was sputtered on the silver layer we get the final OMO structure. The radio-frequency power of the target was fixed at 30 W. The chamber pressure was set to $6.0{\times}10^{-3}$ Torr, and the gas ratio of Ar was fixed at 25 sccm. The silver thickness are varied from 3 to 15 nm. The OMO thin films was analyzed using XRD. XRD shows broad peak which clearly indicates amorphous phase. ZnO, AZO, OMO show the peak [002] direction at $34^{\circ}$. This indicate that ZnO, AZO OMO structure show the crystalline peak. Average transmittance of visible region was over 75%, while that of infrared region was under 20%. Energy band gap of OMO layer was increased with increasing thickness of Ag layer. As a result total transmittance was decreased.

• Journal of the Microelectronics and Packaging Society
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• v.17 no.2
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• pp.35-40
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• 2010

The variations of dielectric properties of $Ta_2O_5-SiO_2$ continuous composition spread thin films prepared by off-axis radio-frequency magnetron sputtering were investigated. The dielectric maps of dielectric constant and loss were plotted via 1500 micron-step measuring. The specific points showing superior dielectric properties of high dielectric constant (k~19.5) and loss (tan${\delta}$<0.05) at 1 MHz were found in area of the distance of 16 mm and 22 mm apart from $SiO_2$ side in $75{\times}25mm^2$ sized Pt/Ti/$SiO_2$/Si(100) substrates.

• Journal of Animal Environmental Science
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• v.8 no.2
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• pp.63-72
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• 2002

In Korea, a need of automatic dairy farm management system has been increased to lower production cost and to strengthen international competition. However, the present management system was mostly relied on foreign technologies and caused some problems in post management and after-sales services. Therefore, though there is a problem of price and quality at present, domestic technologies of the management system should be developed for the long run. This study was conducted to develop an electronic identification unit for an automatic dairy farm management system. The developed system was consisted of a tag, a reader, a switching circuit, and a personal computer. The tag attachable to each individual cow was developed to transmit individual radio frequency(RF) code into the air with modulation of ASK(amplitude shift keying). And the switching circuit was added to avoid confusion on reception and transmittance. The reader attached to a feeding device was developed to transmit activating signal periodically and to identify code of the individual tag when the tag was approached to the device. The reader was consisted of an active filter, a detecter, a comparator and a microcontroller. The test result was feasible enough to apply it for the automatic farm management system and the identified maximum distance was about 37cm.

• International Journal of Internet, Broadcasting and Communication
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• v.10 no.1
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• pp.71-76
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• 2018

The technology convergence of television, communication, and computing devices enables the rich social and entertaining experience through Smart TV in personal living space. The powerful smart TV computing platform allows to provide various user interaction interfaces like IR remote control, web based control, body gesture based control, etc. The presently used smart TV interaction user control methods are not efficient and user-friendly to access different type of media content and services and strongly required advanced way to control and access to the smart TV with easy user interface. This paper propose the optical wireless communication (OWC) based remote controller design for Smart TV using smart device Flashlights. In this approach, the user smart device act as a remote controller with touch based interactive smart device application and transfer the user control interface data to smart TV trough Flashlight using visible light communication method. The smart TV built-in camera follows the optical camera communication (OCC) principle to decode data and control smart TV user access functions according. This proposed method is not harmful as radio frequency (RF) radiation does it on human health and very simple to use as well user does need to any gesture moves to control the smart TV.

• Journal of the Korean Society for Heat Treatment
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• v.28 no.2
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• pp.63-67
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• 2015

$TiO_2/Ag/TiO_2$ trilayer films were deposited with radio frequency (RF) and direct current (DC) magnetron sputtering onto the glass substrate to consider the influence of Ag interlayer on the optical properties of the films. The thickness of $TiO_2$ films was kept at 24 nm, while the thickness of Ag interlayer was varied as 5, 10, 15, and 20 nm. As-deposited $TiO_2$ single layer films show the optical transmittance of 66.7% in the visible wave-length region and the optical reflectance of 16.5%, while the $TiO_2$ films with a 15 nm thick Ag interlayer show the enhanced optical transmittance of 80.2% and optical reflectance of 77.8%. The carrier concentration was also influenced by Ag interlayer. The highest carrier concentration of $1.01{\times}10^{23}cm^{-3}$ was observed for a 15 nm thick Ag interlayer in $TiO_2/Ag/TiO_2$ films. The observed result means that an optimized Ag interlayer in $TiO_2/Ag/TiO_2$ films enhanced the structural and optical properties of the films.

• Journal of Advanced Navigation Technology
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• v.24 no.1
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• pp.53-60
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• 2020

In this paper, We have studied the structure of a Telemetry Transmitter capable of transmitting variable data rates. This paper proposed a structure combining variable pre-modulation filter with cutoff characteristic with variable input sample rate converter. Variable pre-modulation filter has the same characteristics as pre-modulation filter and is converted to a constant sampling rate without structural changes according to the variable input data rate. We propose a software program that actively controls variable pre-modulation filter and variable input sample rate converter to respond to real-time changing data.

• Korean Journal of Materials Research
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• v.20 no.12
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• pp.636-639
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• 2010

ZnO thin films were prepared on a glass substrate by radio frequency (RF) magnetron sputtering without intentional substrate heating and then surfaces of the ZnO films were irradiated with intense electrons in vacuum condition to investigate the effect of electron bombardment on crystallization, surface roughness, morphology and hydrogen gas sensitivity. In XRD pattern, as deposited ZnO films show a higher ZnO (002) peak intensity. However, the peak intensity for ZnO (002) is decreased with increase of electron bombarding energy. Atomic force microscope images show that surface morphology is also dependent on electron bombarding energy. The surface roughness increases due to intense electron bombardment as high as 2.7 nm. The observed optical transmittance means that the films irradiated with intense electron beams at 900 eV show lower transmittance than the others due to their rough surfaces. In addition, ZnO films irradiated by the electron beam at 900 eV show higher hydrogen gas sensitivity than the films that were electron beam irradiated at 450 eV. From XRD pattern and atomic force microscope observations, it is supposed that intense electron bombardment promotes a rough surface due to the intense bombardments and increased gas sensitivity of ZnO films for hydrogen gas. These results suggest that ZnO films irradiated with intense electron beams are promising for practical high performance hydrogen gas sensors.