• 센서학회지
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• 제33권4호
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• pp.224-229
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• 2024

Quantum dot light-emitting diodes (QD-LEDs) are emerging as next-generation displays owing to their high color purity, wide color gamut, and solution processability. Enhancing the efficiency of QD-LEDs involves preventing non-radiative recombination mechanisms, such as Auger and interfacial recombination. Generally, ZnO serves as the electron transport layer, which is known for its higher mobility compared to that of organic semiconductors and can lead to excessive electron injection. Some of the injected electrons pass through the quantum dot emissive layer and undergo non-radiative recombination near or within the organic hole transport layer (HTL), resulting in HTL degradation. Therefore, the implementation of electron blocking layers (EBLs) is essential; however, studies on all-solution-processed inverted InP QD-LEDs are limited. In this study, poly(9-vinylcarbazole) (PVK) is introduced as an EBL to mitigate HTL degradation and enhance the emission efficiency of inverted InP QD-LEDs. Using a single-carrier device, PVK was confirmed to effectively inhibit electron overflow into the HTL, even at extremely low thicknesses. The optimization of the PVK thickness also ensured minimal disruption of the hole-injection properties. Consequently, a 1.5-fold increase in the maximum luminance was achieved in the all-solution-processed inverted InP QD-LEDs with the EBL.

• 한국세라믹학회지
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• 제41권8호
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• pp.573-577
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• 2004

Eu$^{2＋}$를 활성제로 Sr$_3$MgSi$_2$ $O_{8}$ 청색 형광체를 합성하고, Sr$_3$MgSi$_2$ $O_{8}$：Eu 청색 형광체를 InGaN의 UV chip에 도포하여 청색 LED Lamp를 제조하였다. 제조된 청색 LED Lamp는 405nm와 460nm에서 두 개의 파장을 나타내고 있다. 405nm의 파장은 InGaN의 활성영역으로부터의 radiative recombination 때문에 나타나는 피크이다. 여기에서 나오는 405nm의 발광은 본 Sr$_3$MgSi$_2$ $O_{8}$：Eu 청색 형광체의 여기원으로 사용된다 460nm에서의 발광 밴드는 Sr$_3$MgSi$_2$ $O_{8}$ 모체내에서 Eu$^{2＋}$ 이온의 radiative recombination에 의한 것이다. 발광효율이 좋은 Sr$_3$MgSi$_2$ $O_{8}$：Eu 청색 형광체를 이용하여 UV 청색 LED Lmp를 제조한 결과, 에폭시와 청색 형광체의 무게 비율이 1$.$0.202에서 가장 좋은 광도값을 얻을 수 있었다. 이때 색좌표는 CIE x=0.1417, CIE y=0.0683이었다.

• 한국광학회지
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• 제9권4호
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• pp.221-226
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• 1998

$Er_2O_3$를 첨가한 $PbO-Bi_2O_3-Ga_2O_3$ 삼성분계 중금속 산화물 유리로부터 발생하는 $1.5\mu\textrm{m}$와 2.7$\mu\textrm{m}$ 등의 형광에 대하여 복사 천이율, 형광 수명, 흡수 및 유도 방출 단면적 등을 조사하였다. 중금속 산화물 유리의 낮은 포논 에너지($~500cm^{-1}$)로 인하여 기존 산화물 유리로부터 관찰할 수 없었던 형광들의 양자 효율이 크게 높아졌으며 방출 단면적도 증가하였다. 한편, 798 nm 여기광의 상향 전이를 통한 녹색과 적색의 형광이 방출됨을 확인하였고, 각 에너지 준위의 형광 수명을 이용하여 다중포논 완화(multiphonon relaxation)를 정량적으로 규명하였다. $Er^{3+}:^4S_{3/2}{\rightarrow}^4I_{15/2}$ 천이에 의한 녹색 형광은 기지 유리(host glass)의 밴드 갭(band gap)흡수에 의한 비복사 천이의 영향을 받으므로 이 형광의 양자 효율을 높이기 위해서는 유리를 불활성 기체 분위기에서 용융하거나 자외선쪽 투과단이 짧은 유리 망목 형성제(glass-vetwork former)가 첨가된 기지 조성을 선택하는 것이 바람직하다.

• Advances in nano research
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• 제13권5호
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• pp.475-485
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• 2022

Crystalline silicon photovoltaic cells have advantages of zero pollution, large scale and high reliability. A major challenge is that sunlight wavelength with photon energy lower than semiconductor band gap is converted into heat and increase its temperature and reduce its conversion efficiency. Traditional cooling PV method is using water flowing below the modules to cool down PV temperature. In this paper, the idea is proposed to reduce the temperature of the module and improve the energy conversion efficiency of the module through the modulation of the solar spectrum. A spectrally selective nanofilm reflector located directly on the surface of PV is designed, which can reflect sunlight wavelength with low photon energy, and even enhance absorption of sunlight wavelength with high photon energy. The results indicate that nanofilm reflector can reduce spectral reflectivity integral from 9.0% to 6.93% in 400~1100 nm wavelength range, and improve spectral reflectivity integral from 23.1% to 78.34% in long wavelength range. The nanofilm reflector can reduce temperature of PV by 4.51℃ and relatively improved energy conversion efficiency of PV by 1.25% when solar irradiance is 1000 W/m². Furthermore, the nanofilm reflector is insensitive in sunlight's angle and polarization state, and be suitable for high irradiance environment.

• 전기학회논문지
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• 제57권12호
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• pp.2276-2280
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• 2008

In this paper, we present thermal dependancy of LED package element by changing temperature of MCPCB for design high efficiency LED lamp, and confirmed influence of LED chip against temperature with analysis of thermal resistance and thermal capacitance. As increasing temperature, WPOs were decreased from 25 to 22.5 [%] and optical power were also decreased. that is decreased reason of optical power that forward voltage was declined by decrease of energy bandgap. Therefore optical power by temperature of MCPCB should consider to design lamp for street light and security light. Moreover, compensation from declined optical efficiency is demanded when LED package is composed. Also, thermal resistances from chip to metal PCB were decreased from 12.18 to 10.8[$^{\circ}C/W$] by changing temperature. Among the thermal resistances, the thermal resistance form chip to die attachment was decreased from 2.87 to 2.5[$^{\circ}C/W$] and was decreased 0.72[$^{\circ}C/W$] in Heat Slug by chaning temperature. Therefore, because of thermal resistance gap in chip and heat slug, reliability and endurance of high power LED affect by increasing non-radiative recombination in chip from heat.

• 한국세라믹학회지
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• 제43권3호
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• pp.169-172
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• 2006

We have synthesized a $Eu^{2+}-activated\;{(Sr,Ba)}_2SiO_4$ yellow phosphor and investigated the development of blue LEDs by combining the phosphor with a InGaN blue LED chip (${\lambda}_{em}$=405 nm). The InGaN-based ${(Sr,Ba)}_2SiO_{4}:Eu$ LED lamp shows two bands at 405 nm and 550 nm. The 405 nm emission band is due to a radiative recombination from a InGaN active layer. This 405 nm emission was used as an optical transition of the ${(Sr,Ba)}_2SiO_{4}:Eu$ phosphor. The 550 nm emission band is ascribed to a radiative recombination of $Eu^{2+}$ impurity ions in the ${(Sr,Ba)}_2SiO_4$ host matrix. In the preparation of UV Yellow LED Lamp with ${(Sr,Ba)}_2SiO_{4}:Eu$ yellow phosphor, the highest luminescence efficiency was obtained at the epoxy-to-yellow phosphor ratio of 1:0.45. At this ratio, the CIE chromaticity was x=0.4097 and y=0.5488.

• 대한기계학회논문집
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• 제14권6호
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• pp.1621-1628
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• 1990

본 연구에서는 많은 실질적인 시스템에서, 많은 양의 복합된 전도, 대류, 복 사의 열전달 현상이 동시에 일어나기 때문에 복합된 열전달 모드가 다같이 다루어져야 만 한다. Fig.1에서 보는 바와 같이 얇은 원형휜이 튜브 주위에 무수히 부착되어 있 으며, 휜과 튜브주위를 기체가 흐르고 있다. 휜과 휜, 휜과 튜브표면, 휜과 주위환 경, 튜브표면과 주위환경 사이에서 복사 열전달 상호교환이 충분히 다루어졌다. 전 도, 대류, 복사기 동시에 일어나는 열전달 방정식은 비선형 적분-미분 방정식(nonlin- ear integro-differential equation)으로 표현된다. 온도 분포도(temperature dist- ributions), 열전달량(heat transfer rates), 휜효율(fin efficiencies), 휜유효성(f- ineffectivenesses)등이 계산되어졌고, 무차원 형태로 도표에 결과들을 제시하였다.

• 한국세라믹학회지
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• 제43권5호
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• pp.304-308
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• 2006

We have synthesized a $Eu^{2+}-activated\;Sr_3MgSi_2O_8$ blue phosphor and $(Sr,Ba)_2SiO_4$ yellow phosphor and prepared white LEDs by combining these phosphors with a InGaN UV LED chip. Three distinct emission bands from the InGaN-based LED and the two phosphors are clearly observed at 405 nm, 460 nm and at around 560 nm, respectively. The 405 nm emission band is due to a radiative recombination from a InGaN active layer. This blue emission was used as an optical transition of the $Sr_3MgSi_2O_8:Eu$ blue phosphor and $(Sr,Ba)_2SiO_4:Eu$ yellow phosphor. The 460 nm and 560 nm emission band is ascribed to a radiative recombination of $Eu^{2+}$ impurity ions in the $Sr_3MgSi_2O_8:Eu$ and $(Sr,Ba)_2SiO_4$ host matrix. As a consequence of a preparation of UV White LED lamp using the $Sr_3MgSi_2O_8:Eu$ blue phosphor and $(Sr,Ba)_2SiO_4:Eu$ yellow phosphor, the highest luminescence efficiency was obtained at the ration of epoxy/two phosphor (1/0.2361). At this time, the CIE chromaticity was CIE x = 0.3140, CIE y = 0.3201 and CCT (6500 K).

• 한국추진공학회지
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• 제6권1호
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• pp.21-29
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• 2002

하이브리드 연소 시스템은 안정된 작동조건이나 안전성 면에서 많은 장점을 가지고 있는 반면 기존의 하이브리드 모터는 고체 추진 로켓모터보다 낮은 연료 regression율과 연소효율은 갖는 단점이 있다. 따라서 최근의 연구들은 하이브리드 로켓모터의 연소실 체적의 제한과 연료의 regression율을 향상시키는데 그 초점을 맞추고 있다. 본 연구는 하이브리드 로켓 엔진의 연소과정을 수치적으로 해석하였다. 난류연소는 eddy breakup 모델을 이용하였으며 soot의 생성 및 산화를 다루기 위하여 Hiroyasu와 Nagle and Strickland-Constable 모델을 적용하였다. 복사열전달은 유한체적법을 이용하여 계산하였으며 고체 연료 벽면에서의 분출 효과로 야기되는 대류열전달의 불확실성을 줄이기 위하여 낮은 레이놀즈 수 $\kappa-\varepsilon$ 난류모델을 적용하였다. 계산된 수치결과를 토대로 선회 유동을 가지는 하이브리드 로켓 엔진의 난류연소과정에 대하여 상세히 기술하였다.

• 천문학회지
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• 제36권3호
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• pp.167-175
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• 2003

There is accumulating evidence for a strong link between nuclear starbursts and AGN. Molecular gas in the central regions of galaxies plays a critical role in fueling nuclear starburst activity and feeding central AGN. The dense molecular ISM is accreted to the nuclear regions by stellar bars and galactic interactions. Here we describe recent observational results for the OB star forming regions in M51 and the nuclear star burst in Arp 220 - both of which have approximately the same rate of star formation per unit mass of ISM. We suggest that the maximum efficiency for forming young stars is an Eddington-like limit imposed by the radiation pressure of newly formed stars acting on the interstellar dust. This limit corresponds to approximately 500 $L_{\bigodot} / M_{\bigodot}$ for optically thick regions in which the radiation has been degraded to the NIR. Interestingly, we note that some of the same considerations can be important in AGN where the source of fuel is provided by stellar evolution mass-loss or ISM accretion. Most of the stellar mass-loss occurs from evolving red giant stars and whether their mass-loss can be accreted to a central AGN or not depends on the radiative opacity of the mass-loss material. The latter depends on whether the dust survives or is sublimated (due to radiative heating). This, in turn, is determined by the AGN luminosity and the distance of the mass-loss stars from the AGN. Several AGN phenomena such as the broad emission and absorption lines may arise in this stellar mass-loss material. The same radiation pressure limit to the accretion may arise if the AGN fuel is from the ISM since the ISM dust-to-gas ratio is the same as that of stellar mass-loss.