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Luminescence Characteristics of Blue and Yellow Phosphor for Near-Ultraviolet

자외선 여기용 청색 및 황색 형광체의 발광특성

  • Choi, Kyoung-Jae (Advanced Materials Division, Korea Research Institute of Chemical Technology) ;
  • Park, Joung-Kyu (Advanced Materials Division, Korea Research Institute of Chemical Technology) ;
  • Kim, Kyung-Nam (Advanced Materials Division, Korea Research Institute of Chemical Technology) ;
  • Kim, Chang-Hae (Advanced Materials Division, Korea Research Institute of Chemical Technology) ;
  • Kim, Ho-Kun (Department of Applied Chemistry, Hanyang University)
  • 최경재 (한국화학연구원 화학소재연구부) ;
  • 박정규 (한국화학연구원 화학소재연구부) ;
  • 김경남 (한국화학연구원 화학소재연구부) ;
  • 김창해 (한국화학연구원 화학소재연구부) ;
  • 김호건 (한양대학교 응용화학과)
  • Published : 2006.05.01

Abstract

We have synthesized a $Eu^{2+}-activated\;Sr_3MgSi_2O_8$ blue phosphor and $(Sr,Ba)_2SiO_4$ yellow phosphor and prepared white LEDs by combining these phosphors with a InGaN UV LED chip. Three distinct emission bands from the InGaN-based LED and the two phosphors are clearly observed at 405 nm, 460 nm and at around 560 nm, respectively. The 405 nm emission band is due to a radiative recombination from a InGaN active layer. This blue emission was used as an optical transition of the $Sr_3MgSi_2O_8:Eu$ blue phosphor and $(Sr,Ba)_2SiO_4:Eu$ yellow phosphor. The 460 nm and 560 nm emission band is ascribed to a radiative recombination of $Eu^{2+}$ impurity ions in the $Sr_3MgSi_2O_8:Eu$ and $(Sr,Ba)_2SiO_4$ host matrix. As a consequence of a preparation of UV White LED lamp using the $Sr_3MgSi_2O_8:Eu$ blue phosphor and $(Sr,Ba)_2SiO_4:Eu$ yellow phosphor, the highest luminescence efficiency was obtained at the ration of epoxy/two phosphor (1/0.2361). At this time, the CIE chromaticity was CIE x = 0.3140, CIE y = 0.3201 and CCT (6500 K).

Keywords

References

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