• Nuclear Engineering and Technology
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• v.36 no.3
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• pp.229-236
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• 2004

Radiation hardening is a multiscale phenomenon involving various processes over a wide range of time and length. We present a multiscale model for estimating the amount of radiation hardening in pressure vessel steel in the environment of a light water reactor. The model comprises two main parts: molecular dynamics (MD) simulation and a point defect cluster (PDC) model. The MD simulation was used to investigate the primary damage caused by displacement cascades. The PDC model mathematically formulates interactions between point defects and their clusters, which explains the evolution of microstructures. We then used a dislocation barrier model to calculate the hardening due to the PDCs. The key input for this multiscale model is a neutron spectrum at the inner surface of reactor pressure vessel steel of the Younggwang Nuclear Power Plant No.5. A combined calculation from the MD simulation and the PDC model provides a convenient tool for estimating the amount of radiation hardening.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.67 no.6
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• pp.745-752
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• 2018

ICs(Integrated circuits) for nuclear power plant exposed to radiation environment occur malfunctions and data errors by the TID(Total ionizing dose) effects among radiation-damage phenomenons. In order to protect ICs from the TID effects, this paper proposes a radiation-hardening of the logic circuit(D-latch) which used for the data synchronization and the clock division in the ICs design. The radiation-hardening technology in the logic device(NAND) that constitutes the proposed RH(Radiation-hardened) D-latch is structurally more advantageous than the conventional technologies in that it keeps the device characteristics of the commercial process. Because of this, the unit cell based design of the RH logic device is possible, which makes it easier to design RH ICs, including digital logic circuits, and reduce the time and cost required in RH circuit design. In this paper, we design and modeling the structure of RH D-latch based on commercial $0.35{\mu}m$ CMOS process using Silvaco's TCAD 3D tool. As a result of verifying the radiation characteristics by applying the radiation-damage M&S (Modeling&Simulation) technique, we have confirmed the radiation-damage of the standard D-latch and the RH performance of the proposed D-latch by the TID effects.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.63 no.9
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• pp.1248-1252
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• 2014

In this study, we designed a signal processing module using a radiation hardened technology that can be applied to the all measurement sensors inside nuclear power plant containment. Also, for verification that it can be used for high-level radiation environment (Harsh environmental zone inside containment of NPP), we carried out evaluation tests for a designed module using a $Co^{60}$ gamma-ray source up to 12 kGy(Si). And, we had checked radiation hardening level that it has been satisfied up to 12 kGy(Si).

• Nuclear Engineering and Technology
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• v.38 no.7
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• pp.619-638
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• 2006

Low temperature irradiation can significantly harden metallic materials and often lead to strain localization and ductility loss in deformation. This paper provides a review on the radiation effects on the deformation of metallic materials, focusing on microscopic and macroscopic strain localization phenomena. The types of microscopic strain localization often observed in irradiated materials are dislocation channeling and deformation twinning, in which dislocation glides are evenly distributed and well confined in the narrow bands, usually a fraction of a micron wide. Dislocation channeling is a common strain localization mechanism observed virtually in all irradiated metallic materials with ductility, while deformation twinning is an alternative localization mechanism occurring only in low stacking fault energy(SFE) materials. In some high stacking fault energy materials where cross slip is easy, curved and widening channels can be formed depending on dose and stress state. Irradiation also prompts macroscopic strain localization (or plastic instability). It is shown that the plastic instability stress and true fracture stress are nearly independent of irradiation dose if there is no radiation-induced phase change or embrittlement. A newly proposed plastic Instability criterion is that the metals after irradiation show necking at yield when the yield stress exceeds the dose-independent plastic instability stress. There is no evident relationship between the microscopic and macroscopic strain localizations; which is explained by the long-range back-stress hardening. It is proposed that the microscopic strain localization is a generalized phenomenon occurring at high stress.

• Journal of Radiation Protection and Research
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• v.26 no.1
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• pp.45-49
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• 2001

오늘 날 인공위성을 이용하는 통신, 방송, 기상, 환경모니터링 및 원격탐사 등이 각광을 받고 있는 때에 위성에 설치되는 수많은 전자제품 및 부품들의 우주방사선에 대한 내구성이 매우 중요한 문제로 제기되고 있다. 이러한 관점에서 국내에서는 아직 확보할 수 없는 우주방사선차폐 전자공학기술에 관한 정보자료를 조사 수집하여 기술적으로 직접 활용해야할 필요성이 시급하게 대두되고 있다. 따라서 선진국에서 개발된 우주방사선차폐를 위한 첨단전자공학기술에 관한 기술정보 자료를 체계적으로 서술한다.

• Nuclear Engineering and Technology
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• v.56 no.4
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• pp.1277-1283
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• 2024

This study presents a radiation-induced thermal conductivity degradation (TCD) model of zirconium as compared to the conventional UO2 TCD model. We derived the governing factors of the radiation-induced TCD model, such as maximum TCD value and temperature range of TCD. The maximum TCD value was derived by two methods, in which 1) experimental result of 32 % TCD was directly utilized as the maximum TCD value and 2) a theoretical approach based on dislocation was applied to derive the maximum TCD value. Further, the temperature range of TCD was determined to be 437-837 K by 1) experimental results of post-annealing of irradiation hardening as compared to 2) the rate theory and thermal equilibrium. Consequently, the radiation-induced TCD model of zirconium was derived to be $f_r=1-{\frac{0.32}{1+{\exp}\,\{(T-637)/45\}}}$. Because the thermal conductivity of zirconium is one of the factors determining the storage and transport system, this newly proposed model could improve the safety analysis of spent fuel storage systems.

• Journal of Institute of Control, Robotics and Systems
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• v.8 no.2
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• pp.136-141
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• 2002

The electrical characteristics of solid state devices such as BJT(Bipolar Junction Transistor) and MOSFET, etc, are altered by impinging nuclear radiation and temperature in the space environment. This phenomenon is well known and has been studied extensively since the early 1960's when satellites were first being designed and used in the United States. However, the studies and the developments of radiation hardening technologies for the electronic components at the industrial fields in our country has not been popular so far. The worst case design technology in the electrical circuit is required for the appropriate operation of solid state devices in the space environment. In this paper, the interface circuit used in KOMPSAT(Korea Multipurpose Satellite), which is now being operated since the one was launched in 1999, is optimally designed to accomodate the worst case design and radiation effect.

• Journal of Powder Materials
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• v.30 no.5
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• pp.431-435
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• 2023

An irradiation hardening of Inconel 718 produced by selective laser melting (SLM) was studied based on the microstructural observation and mechanical behavior. Ion irradiation for emulating neutron irradiation has been proposed owing to advantages such as low radiation emission and short experimental periods. To prevent softening caused by the dissolution of γ' and γ" precipitates due to irradiation, only solution annealing (SA) was performed. SLM SA Inconel 718 specimen was ion irradiated to demonstrate the difference in microstructure and mechanical properties between the irradiated and non-irradiated specimens. After exposing specimens to Fe³⁺ ions irradiation up to 100 dpa (displacement per atom) at an ambient temperature, the hardness of irradiated specimens was measured by nano-indentation as a function of depth. The depth distribution profile of Fe³⁺ and dpa were calculated by the Monte Carlo SRIM (Stopping and Range of Ions in Matter)-2013 code under the assumption of the displacement threshold energy of 40 eV. A transmission electron microscope was utilized to observe the formation of irradiation defects such as dislocation loops. This study reveals that the Frank partial dislocation loops induce irradiation hardening of SLM SA Inconel 718 specimens.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.66 no.3
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• pp.540-544
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• 2017

In this study, we analyzed the effects of TID(Total Ionizing Dese) and TREE(Transient Radiation Effects on Electronics) on nMOSFET and pMOSFET fabricated by 0.18um CMOS process. The size of nMOSFET and pMOSFET is 100um/1um(W/L). The TID test was conducted up to 1 Mrad(Si) with a gamma-ray(Co-60). During the TID test, the nMOSFET generated leakage current proportional to the applied dose, but that of the pMOSFET was remained in a steady state. The TREE test was conducted at TEST LINAC in Pohang Accelerator Laboratory with a maximum dose-rate of $3.16{\times}10^8rad(si)/s$. In that test nMOESFET generated a large amount of photocurrent at a maximum of $3.16{\times}10^8rad(si)/s$. Whereas, pMOSFETs showed high TREE immunity with a little amount of photocurrent at the same dose rate. Based on the results of this experiment, we will progress the research of the radiation hardening for CMOS unit devices.

• Journal of Astronomy and Space Sciences
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• v.29 no.3
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• pp.315-320
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• 2012

We developed a mass-memory chip by staking 1 Gbit double data rate 2 (DDR2) synchronous dynamic random access memory (SDRAM) memory core up to 4 Gbit storage for future satellite missions which require large storage for data collected during the mission execution. To investigate the resistance of the chip to the space radiation environment, we have performed heavy-ion-driven single event experiments using Heavy Ion Medical Accelerator in Chiba medium energy beam line. The radiation characteristics are presented for the DDR2 SDRAM (K4T1G164QE) fabricated in 56 nm technology. The statistical analyses and comparisons of the characteristics of chips fabricated with previous technologies are presented. The cross-section values for various single event categories were derived up to ~80 $MeVcm^2/mg$. Our comparison of the DDR2 SDRAM, which was fabricated in 56 nm technology node, with previous technologies, implies that the increased degree of integration causes the memory chip to become vulnerable to single-event functional interrupt, but resistant to single-event latch-up.