• Korean Journal of Microbiology
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• v.29 no.5
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• pp.290-295
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• 1991

N4 phage, which infects E. coli K-12 strains, could not infect E. coli K-12 strains containing rtn(resistant to N4) gene on plasmids, which was isolated from Proteus vulgaris ATCC 13315. The region of rtn gene for Rtn phenotype was reduced to the 1.7 kb HincII-AccI fragment, and rtn gene seemed to have its own promoter. This putative promoter was present in 107 bp HindII-DraI fragment, and known to be functional in E. cole K-12, which is supported by the fact that phenotype of a subclone, pRMG103A1B which does not contain the 107 bp fragment, was dependent on the existance of a functional promoter in the upstream of rtn gene, and that the 107 bp fragment had promoter activity when located in the upstream of structural gene of galactodinase of E. coli. The promoter-bearing fragment contains two overlapping putative promoter sequences, both of which show a fit in eight of twelve nucleotides with consensus sequences of E. coli promoters at the -35 and -10 regions.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.104-104
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• 2000

MOS소자의 크기가 작아짐에 따라 gate 유전막의 두께 또한 얇아져야 한다. 두께가 얇아짐에 따라 gate 유전막으로써 기존의 SiO2는 direct tunneling으로 인해 높은 누설전류를 수반한다. 그래서 높은 유전상술르 가지는 물질들에 대한 연구의 필요성이 대두되고 있다. 그중 CVD-Ta2O5는 차세대 MOSFET소자기술에 있어서 높은 유전상수($\varepsilon$r+25)와 우수한 step coverage 때문에 각광을 받고 있는 물질중에 하나이다. 본 연구에서는 Ta2O5를 gate를 유전막으로 사용하고 RTN처리와 wet oxidation을 접목시켜 이들의 전기적인 특성을 향상시킬 수 있었다. p-형 wafer 위에 D2와 O2를 사용하여 SiO2(100 )를, NH3를 이용하여 Nitridation(10 )을 전처리로써 각각 실시하였고 그 위에 MOCVD방법으로 Ta2O5를 80 성장시켰다. 첫 번째 시편은 45$0^{\circ}C$ 10min동안 wet oxidation을 시켰고, 두 번째 시편은 $700^{\circ}C$ 60sec동안 NH3 분위기에서 RTN 처리를 하였다. 세 번째 시편은 동일조건으로 RTN 처리후 wet oxidation을 하였다. 그 후 각각의 시편을 capacitor를 제작하고 그 전기적 특성을 관찰하였다. Wet oxidation만을 시킨 시편은 as-deposited Ta2O5 시편에 비해서 -1.5V에서 누설전류는 약 2~3 order정도 감소되었고 accumulation 영역에서의 capacitance 값은 oxide층의 성장(5 )을 무시하면 거의 변화하지 않았다. RTN처리만 된 시편의 경우는 -1.5V에서 누설전류는 2~3order 정도 증가되었지만, accumulation 영역에서 capacitance 값은 거의 2qwork 증가하였다. 이 두가지 공정을 접목시킨 즉 RTN 처리후 wet oxidation 처리된 시편의 경우는 as-deposited Ta2O5 시편에 비해서 -1.5V에서 누설전류는 1 order 정도 감소하였고, accumulation 지역에서의 capacitance 값은 약 2배 증가하였다. 즉 as deposited Ta2O5 시편의 accumulation 지역의 capacitance 값은 12.8 fF/um2으로써 그 유효두께는 27.0 이었지만, RTN 처리후에 wet oxidation 시킨 시편의 accumulation 지역의 capacitance값은 21.2fF/um2으로써 그 유효두께는 16.3 이 되었다. 결론적으로 as deposited Ta2O5 시편에 RTN 처리후 wet oxidation을 실시한 결과 capacitance 값이 약 2배정도 증가하였고 누설전류는 약 1 order 정도 감소됨을 확인하였다.

• Journal of the Korean Vacuum Society
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• v.3 no.1
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• pp.26-32
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• 1994

• Korean Journal of Cognitive Science
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• v.7 no.4
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• pp.163-178
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• 1996

• Transactions of the Korean Society for Noise and Vibration Engineering
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• v.15 no.6 s.99
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• pp.635-644
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• 2005

This paper is. a study on relation between road traffic noise(RTN) and sound power level(PWL). At present, many experimental formulae and prediction formulae are used for prediction of RTN. But these formulae are difficult to appiy to the metropolitan area because these formulae are inaccurate in the different condition from reference condition. This paper calculate RTN and PWL of each prediction formula, choose the best one and make a noise map of the subject area. Procedure is as follows. First, calculate $L_{eq}$ of RTN using experimental formulae and prediction formulae. Second, calculate PWL using $L_{eq}$ of RTN and distance attenuation for point source at semi-free field. Third, choose the most accurate formula. And finally, make a noise map of the subject area at present and future. The result using noise map will be able to apply to application field. Noise mapping tool used on this paper is Raynoise program using Ray Tracing Method(RTM), Mirror Image Source Method(MISM) and Hybrid Method(HM).

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.195-195
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• 2015

반도체 제조 시 ohmic contact을 형성하고, barrier metal layer형성을 위해 NH3 기체를 사용하는 rapid thermal nitridation (RTN)은 반도체 공정에 있어 매우 중요한 핵심 기술이다. 그러나 공정 진행 시 발생하는 공정 부산물에 의한 chamber오염으로 인해 매우 정확히 입사 되어야 할 thermal energy의 controllability가 저하되고 있어, 미세 공정능력 구현의 한계에 부닥치고 있다. 본 연구에서는 quartz plate liner를 적용하여 RTN 공정에서 발생하는 공정 부산물인 ammonium chloride (NH4Cl)의 chamber 표면 증착을 최소화하였고, 공정 진행 온도의 controllability를 확보하였다.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.4
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• pp.365-375
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• 2014

This paper proposes an abnormal V-shaped-error-free non-blind deconvolution technique featuring an adaptively segmented forward-problem based iterative deconvolution (ASDCN) process. Unlike the algebraic based inverse operations, this eliminates any operations of differential and division by zero to successfully circumvent the issue on the abnormal V-shaped error. This effectiveness has been demonstrated for the first time with applying to a real analysis for the effects of the Random Telegraph Noise (RTN) and/or Random Dopant Fluctuation (RDF) on the overall SRAM margin variations. It has been shown that the proposed ASDCN technique can reduce its relative errors of RTN deconvolution by $10^{13}$ to $10^{15}$ fold, which are good enough for avoiding the abnormal ringing errors in the RTN deconvolution process. This enables to suppress the cdf error of the convolution of the RTN with the RDF (i.e., fail-bit-count error) to $1/10^{10}$ error for the conventional algorithm.

• Proceedings of the Materials Research Society of Korea Conference
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• 1992.05a
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• pp.63-63
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• 1992

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2004.05a
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• pp.527-534
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• 2004

This study is a paper relating to between road traffic noise(RTN) and sound power level(PWL). At present to prediction of RTN is used to many experimental models and prediction methods. RTN is computed PWL using existing experimental models and prediction methods. Then, computed PWL is compared with it of measurement value, in them, it is selected model most similar to measurement value. And then, this results will watch for make Noise Map, as application field applied to computed results.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1988.05a
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• pp.24-26
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• 1988

The electrical properties of thin nitrided thermal oxides prepared by rapid thermal nitridation(RTN) have been studied. The flatband voltages were calculated using C-V measurement and found to vary as nitridation time and temperature. After nitridation an increase in the fixed oxide charge density was always observed, but the distribution of it as a function of annealing time was found to be random. The breakdown voltages were measured using curve tracer.