• Proceedings of the Materials Research Society of Korea Conference
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• 1993.05a
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• pp.64-65
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• 1993

MPB 조성영역인 Zr/Ti=52/48의 composite ceramic target을 사용하여 RF magnetron sputtering 방법으로 기판온도 약 30$0^{\circ}C$에서 RZT 박막을 Pt/Ti/Si 기판위에 증착시켰다. 안정상인 perovskite 구조를 형성시키기 위하여 PbO분위기에서 furnace annealing 과 Repid thermal annealing을 실시하여 열처리 방법에 따른 상형성 및 계면반응과 그에 따른 전기적 특성을 고찰 하였다. Pt 의 두께가 250$\AA$인 경우 furnace annealing 시 $650^{\circ}C$에서 perouskite 상이 형성되었으나 Pt층이 산소의 확산을 방지하지 못하여 상부의 Ti 층이 TiOx로 변태하였으며 하부의 Ti는 Si 과 반응하여 Ti-silicide 롤 변태하였다. 또한 75$0^{\circ}C$,60sec 인 경우 Pt 층의 응집화가 관찰되어 하부전극으로서 적용이 적절하지 못하다. 급속열처리를 실시한 경우에도 마찬가지로 Ti 층이 TiOx 와 silicide 층으로 변태되었다. Pt의 두께가 1000$\AA$인 경우에도 250$\AA$와는 달리 RTA 시 (III)방향으로 Furace annealing 시(001)방향으로 우선 성장하였다. 이는 Ti(001), P(111),PZT(111)면의 lattic mismatch 가 매우 작은데다 RTA 시 계면반응이 거의발생하지 않아 PZT 박막이 (111) 방향으로 우선 성장한 것으로 보인다. Furnace annealing 경우는 심한 계면반응이 발생하여 Pt층에 어느 정도 영향을 주었기 때문에 우선성장 방향이 바뀌었다구 생각한다.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.18 no.3
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• pp.449-455
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• 1993

In order to investigate the improvements of relatively poor characteristics of short wave length AlGaAs/GaAs laser diodes which are useful as a light source for short distance communication systems, the low temperature $(<680^{\circ}C)$ grown AlGaAs/GaAs GRINSCH-QW laser diodes by molecular beam epitaxy have been studied by photoluminescence as a function of rapid thermal annealing (RTA) temperature. It is shown that guantum well photoluminescence intensity increased substantially by a factor of 10 after RAT at $950^{\circ}C$ for 10 sec. This is related to the reduction of non-radiative recombination in the guantum well region. The threshold current of annealed laser diode is reduced by a factor, of 4, confirming the improvement of laser diode quality by rapid thermal annealing.

• Journal of IKEEE
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• v.24 no.2
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• pp.604-609
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• 2020

We investigated the influence of rapid thermal annealing on aluminum nitride (AlN) thin film Schottky barrier diodes (SBDs) manufactured structures deposited on a 4H-silicon carbide (SiC) wafer using radio frequency sputtering. The Ni/AlN/4H-SiC devices annealed at 400℃ exhibited Schottky barrier diode (SBDs) properties with an on/off current ratio that was approximately 10 times higher than that of the as-deposited device structures and the devices annealed at 600℃ as measured at room temperature. Auger electron spectroscopy (AES) measurements revealed that atomic oxygen concentrations in the annealed AlN devices at 400℃, is ascribed to the improvement in on/off ratio and the reduction of on-resistance. Additionally, we investigated the electrical characteristics of the AlN/SiC SBD structures depending on the frequency variation of sound waves.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.51 no.8
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• pp.340-346
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• 2002

Capacitor material utilized in the downsizing passive devices and integration of passive devices requires the physical and electrical properties at given area such as capacitor thickness reduction, relative dielectric constant increase, low leakage current and thermal stability. common capacitor materials, $Al_2O_3$, $SiO_2$, $Si_3N_4$, $SiO_2$/$Si_3N_4$, TaN and et al., used until recently have reached their physical limits in their application to integration of passive devices. $Ta_2O_{5}$ is known to be a good alternative to the existing materials for the capacitor application because of its high dielectric constant (25~35), low leakage current and high breakdown strength. Despite the numerous investigations of $Ta_2O_{5}$ material, there have little been established the clear understanding of the annealing effect on capacitance characteristic and conduction mechanism. This study presents the dielectric properties $Ta_2O_{5}$ MIM capacitor structure Processed by $O_2$ RTA oxidation. X-ray diffraction patterns showed the existence of amorphous phase in $600^{\circ}C$ annealing under the $O_2$ RTA and the formation of preferentially oriented-$Ta_2O_{5}$ in 650, $700^{\circ}C$ annealing and the AES depth profile showed $O_2$ RTA oxidation effect gives rise to the $O_2$ deficientd into the new layer. The leakage current density respectively, at 3~1l$\times$$10_{-2}$(kV/cm) were $10_{-3}$~$10_{-6}$(A/$\textrm{cm}^2$). In addition, behavior is stable irrespective of applied electric field. the frequency vs capacitance characteristic enhanced stability more then $Ta_2O_{5}$ thin films obtained by $O_2$ reactive sputtering. The capacitance vs voltage measurement that, Vfb(flat-band voltage) was increase dependance on the $O_2$ RTA oxidation temperature.

• Korean Journal of Materials Research
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• v.3 no.3
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• pp.310-315
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• 1993

The effects of RT A treatment on the breakdown strengths were studied for tantalum pentoxide(${Ta_2}{O_5}$) films prepared by thermal oxidation of dc-sputtered Ta(400$\AA$) on p-type (100) Si wafer. While the relative dielectric constants of the RT A -treated specimens were not remarkably affected, the breakdown strengths of the RTA-treated specimens were greatly changed by RTA temperature and time. After the RTA treatment, the breakdown strengths of the specimens RTA-treated at the temperature below the crystallization temperature were increased to 5.4MV /cm, while those of the specimens RTA -treated at the temperature above it were decreased to 0.5MV /cm. RTA time-independence of the flat-bant voltage shift refleted that the RT A post-annealing effects on the breakdown strengths were not due to the interface reaction between the ${Ta_2}{O_5}$ layer and the Si substrate but, through the RBS analysis, to densification of the ${Ta_2}{O_5}$ films.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1277-1280
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• 2007

Isothermal activation annealing was carried out using boron doped SLS poly-using an RTA system. We observed different behavior of reverse annealing depending on the implantation conditions.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.329-332
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• 1999

In this paper, BST((Bao.&o,dTi0:3) thin films were deposited by the rf magnetron sputtering method on Pt/$SiO_2$/Si substrate. Pt, $RuO_2$, Ag, Cu films for the formation of top electrode were deposited on BST thm films. And then Top Electrodes/BST/Pt capacitors were annealed with rapid thermal annealing(RTA) at various temperature. We have investigated effect of post-annealing on the electrical properties such as dielectric constant and leakage current of the capacitors. It was found that electrical properties of the capacitors were greatly depended on the annealing temperatures as well as the materials of top electrodes. In BST thin films with Pt top electrode was annealed at $700^{\circ}C$. the dielectric constant was measured to the value of 346 at l[kHzl and the leakage current was obtained to the value of $8.76\times10^8$[A/$\textrm{cm}^2$] at the forward bias of 2[V].

• Applied Science and Convergence Technology
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• v.26 no.6
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• pp.208-213
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• 2017

Flexible opto-electronic devices are developed on the insulating layer deposited stainless steel (STS) substrates. The silicon dioxide ($SiO_2$) material as the diffusion barrier of Fe and Cr atoms in addition to the electrical insulation between the electronic device and STS is processed using the plasma enhanced chemical vapor deposition method. Noble silver (Ag) films of approximately 100 nm thickness have been formed on $SiO_2$ deposited STS substrates by E-beam evaporation technique. The films then were annealed at $650^{\circ}C$ for 20 min using the rapid thermal annealing (RTA) technique. It was investigated the variation of the surface morphology due to the interaction between Ag films and $SiO_2$ layers after the RTA treatment. The results showed the movement of Si atoms in silver film from $SiO_2$. In addition, the structural investigation of Ag annealed at $650^{\circ}C$ indicated that the Ag film has the material property of p-type semiconductor and the bandgap of approximately 1 eV. Also, the films annealed at $650^{\circ}C$ showed reflection with sinusoidal oscillations due to optical interference of multiple reflections originated from films and substrate surfaces. Such changes can be attributed to both formation of $SiO_2$ on Ag film surface and agglomeration of silver film between particles due to annealing.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.358-361
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• 2002

Self-aligned MOSFETS using a polysilicon gate are widely fabricated in silicon technology. The polysilicon layer acts as a mask for the source and drain implants and does as gate electrode in the final product. However, the usage of polysilicon gate as a self-aligned mask is restricted in fabricating SiC MOSFETS since the following processes such as dopant activation, ohmic contacts are done at the very high temperature to attack the stability of the polysilicon layer. A metal instead of polysilicon can be used as a gate material and even can be used for ohmic contact to source region of SiC MOSFETS, which may reduce the number of the fabrication processes. Co-formation process of metal-source/drain ohmic contact and gate has been examined in the 4H-SiC based vertical power MOSFET At low bias region (<20V), increment of leakage current after RTA was detected. However, the amount of leakage current increment was less than a few tens of ph. The interface trap densities calculated from high-low frequency C-V curves do not show any difference between w/ RTA and w/o RTA. From the C-V characteristic curves, equivalent oxide thickness was calculated. The calculated thickness was 55 and 62nm for w/o RTA and w/ RTA, respectively. During the annealing, oxidation and silicidation of Ni can be occurred. Even though refractory nature of Ni, 950$^{\circ}C$ is high enough to oxidize it. Ni reacts with silicon and oxygen from SiO$_2$ 1ayer and form Ni-silicide and Ni-oxide, respectively. These extra layers result in the change of capacitance of whole oxide layer and the leakage current

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.237-238
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• 2008

Electrical properties of Pd/Zn/Pd/Au contacts to p-InP were investigated as function of the V/III ratio of p-InP. P-type InP was made by the Zn diffusion into InP and activation process with rapid thermal annealing (RTA) measurement. After activation, the hole concentration was two orders of magnitude higher than that of the sample having only diffusion process. According to transmission line method (TLM) results, the specific contact resistance of p-InP was lower as used InP having the lower V/III ratio. The experimental results represent that the diffusion of Zn in undoped InP deeply related to the equilibrium between interstitials and substitutional Zn is established via indium interstitials.