• The Journal of the Acoustical Society of Korea
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• v.42 no.6
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• pp.491-499
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• 2023

Scattering by Sea surface roughness occurs due to sea level roughness, communication performance deteriorates by causing frequency spread in communication signals and time variation in communication channels. In order to compare the difference in time variation of underwater acoustic communication channel according to the surface roughness, an experiment was performed in a tank owned by Hanyang University Ocean Acoustics Lab. Artificial surface roughness was created in the tank and communication signals with three bandwidths were used (8 kHz, 16 kHz, 32 kHz). The measured surface roughness was converted into a Rayleigh parameter and used as a roughness parameter, and statistical analysis was performed on the time-varying channel characteristics of the surface path using Doppler spread and correlation time. For the Doppler spread of the surface path, the Weighted Root Mean Square Doppler spread (w_fσ_ν) that corrected the effect of the carrier frequency and bandwidth of the communication signal was used. Using the correlation time of the surface path and the energy ratio of the direct path and the surface path, the correlation of total channels was simulated and compared with the measured correlation time of total channels. In this study, we propose a method for efficient communication signal design in an arbitrary marine environment by using the time-varying characteristics of the sea surface path according to the sea surface roughness.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.430.2-430.2
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• 2016

The front transparent conductive oxide (TCO) films in thin fill solar cell should exhibit high transparency, conductivity, good surface morphology and excellent light scattering properties. The light trapping phenomenon is limited due to random surface structure of TCO films. The proper control of surface structure and uniform cauliflower TCO films may be appropriate for efficient light trapping. We report light trapping scheme of ICP-RIE glass texturing by SF6/Ar plasma for high roughness and haze ratio of ITO films. It was observed that the variation of etching time, pattern size and Ar flow ratio during ICP-RIE process were important factors to improve the diffused transmittance and haze ratio of textured glass. The ICP-RIE textured glass showed low etching rates due to the presence of metal elements like Al, B, F and Na. The ITO films deposited on textured glass substrates showed the high RMS roughness and haze ratio in the visible wavelength region. The change in surface morphology showed negligible influence on electrical and structural properties of ITO films. The ITO films with high roughness and haze ratio can be used to improve the performance of thin film solar cells.

• Progress in Superconductivity
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• v.6 no.1
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• pp.69-73
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• 2004

Ni alloy tape is electropolished to be used as a metal substrate for fabrication of IBAD (ion-Beam Assisted Deposition)-MgO texture template fur HTS coated conductor. Electropolishing is needed to obtain a very smooth surface of Ni alloy tape because the in-plane texture of templates is sensitive to the roughness of metal substrate. The critical current of YBCO coated conductor depends on the texture of YBCO that depends on the texture of the IBAD MgO layer. And so the smoothness of the metal substrate is directly related to the superconducting properties of the coated conductor. In this study, we have prepared a reel-to-reel electropolishing apparatus to polish the Ni alloy tapes for IBAD. Various electropolishing conditions were investigated to improve the surface roughness. Hastelloy tape is continuously electropolished with high polishing current density (0.5 ∼ 2 A/$\textrm{cm}^2$) and fast processing time (1 ∼ 3 min). Polished hastelloy tapes have surface roughness(RMS) of below 1 nm on a 5 ${\times}$ 5 $\mu\m^2$ from AFM and SEM.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.128-128
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• 2010

In this study, we investigated the evolution and reduction of the surface roughness during the high-speed chemical dry thinning process of Si wafers. The direct injection of NO gas into the reactor during the supply of F radicals from NF3 remote plasmas was very effective in increasing the Si thinning rate, due to the NO-induced enhancement of the surface reaction, but resulted in the significant roughening of the thinned Si surface. However, the direct addition of Ar and N2 gas, together with NO gas, decreased the root mean square (RMS) surface roughness of the thinned Si wafer significantly. The process regime for the increasing of the thinning rate and concomitant reduction of the surface roughness was extended at higher Ar gas flow rates. In this way, Si wafer thinning rate as high as $20\;{\mu}m/min$ and very smooth surface roughness was obtained and the mechanical damage of silicon wafer was effectively removed. We also measured die fracture strength of thinned Si wafer in order to understand the effect of chemical dry thinning on removal of mechanical damage generated during mechanical grinding. The die fracture strength of the thinned Si wafers was measured using 3-point bending test and compared. The results indicated that chemical dry thinning with reduced surface roughness and removal of mechanical damage increased the die fracture strength of the thinned Si wafer.

• Journal of Electrical Engineering and Technology
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• v.3 no.2
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• pp.271-275
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• 2008

The MAM(Megasonic Agitated Module) has been fabricated for improving the characteristics of wet etching. The characteristics of the MAM are investigated during the wet etching with and without megasonic agitation in this paper. The adoption of the MAM has improved the characteristics of wet etching, such as the etch rate, etch uniformity, and surface roughness. Especially, the etching uniformity on the entire wafer was less than ${\pm}1%$ in both cases of Si and glass. Generally, the initial root-mean-square roughness($R_{rms}$) of the single crystal silicon was 0.23nm. Roughnesses of 566nm and 66nm have been achieved with magnetic stirring and ultrasonic agitation, respectively, by some researchers. In this paper, the roughness of the etched Si surface is less than 60 nm. Wet etching of silicon with megasonic agitation can maintain nearly the original surface roughness during etching. The results verified that megasonic agitation is an effective way to improve etching characteristics of the etch rate, etch uniformity, and surface roughness and that the developed micromachining system is suitable for the fabrication of devices with complex structures.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.124-128
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• 2004

A Poly-Si and a ITO films with surface roughness 1.8 nm and 0.5 nm of root mean square ($R_{rms}$ vakue) values were developed, respectively. A 3 inch UXGA LTPS TFT-LCD with 667 ppi resolution and a 10 inch VGA LTPS OLED have been developed and demonstrated using PMOS technology.

• Water for future
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• v.22 no.3
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• pp.315-322
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• 1989

The effects of open boundary conditions including the radiation condition are compared by utilizing the $L^{2_}$-norm and RMS error in the numerical modeling of ocean problem. In numerical tests of $M_2$ tide, grid size and bed roughness are considered and analyzed. For the $M_2$ tide test in a simplified bay where the analytical solutions are available, it is found that improved radiating boundary condition(IMPSOM) may increase the reliability of computed results by 40% of $L^{2_}$-norm and 96% of RMS error than the open boundary condition without radiation effect. In case of using the half-size grids, better results are obtained. It is also found that the IMPSOM is applicable with satisfaction when the bottom friction is included.

• Transactions on Electrical and Electronic Materials
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• v.17 no.2
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• pp.98-103
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• 2016

The surface morphology of the front transparent conductive oxide (TCO) films plays a vital role in amorphous silicon thin film solar cells (a-Si TFSCs) due to their high transparency, conductivity and excellent light scattering properties. Recently, plasma textured glass surface morphologies received much attention for light trapping in a-Si TFSCs. We report various plasma textured glass surface morphologies for the high efficiency of a-Si TFSCs. Plasma textured glass surface morphologies showed high rms roughness, haze ratio with micro- and nano size surface features and are proposed for future high efficiency of a-Si TFSCs.

• Journal of the Korean institute of surface engineering
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• v.28 no.1
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• pp.55-63
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• 1995

Alkaline solutions such as $NH_4$OH, choline and TMAH (($CH_3$)$_4$NOH) have been introduced in semiconductor wet processing of silicon wafers to control ionic and particulate impurities following etching in acidic solutions. These chemicals usually mixed with hydrogen peroxide and/or surfactants to control the etch rate of silicon. The highest etch rate was observed in $NH_4$OH solutions at a pH in alkaline solutions. It indicates that the etch rate depends on the content of $OH^{-}$ as well as cations of alkaline solutions. STM/AFM techniques were used to characterize the effect of alkaline solutions on silicon surface roughness. In SC1 (mixture of $NH_4$OH : $H_2$$O_2$ : $H_2$O) solutions, the reduction of the ammonium hydroxide proportion from 1 to 0.1 decreased the surface roughness ($R_{rms}$) from 6.4 to $0.8\AA$. The addition of $H_2$$O_2$ and surfactants to choline and TMAH reduced the values of $R_{p-v}$ and $R_{rms}$ significantly. $H_2$$_O2$ and surfactants added in alkaline solutions passivate bare silicon surfaces by the oxidation and adsorption, respectively. The passivation of surfaces in alkaline solutions resulted in lower etch rate of silicon thereby provided smoother surfaces.s.ces.s.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.7
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• pp.440-444
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• 2016

Titanium oxide ($TiO_2$) thin films were synthesized on polymer insulator and Si substrates by atomic layer deposition (ALD) method. The surface and electrical properties of $TiO_2$ films synthesized at various ALD cycle numbers were investigated. The synthesized $TiO_2$ films exhibited higher contact angle and smooth surface. The contact angle of $TiO_2$ films was increased with the increase of ALD-cycle number. Also, the rms surface roughness of films was slightly rough with the increase of ALD-cycle number. The leakage current on $TiO_2$ film surface synthesized at various conditions were uniformed, and the values were decreased with the increase of ALD-cycle number. In the results, the performance of $TiO_2$ films for self-cleaning critically depended on a number of ALD-cycle.