• Journal of Electrical Engineering and Technology
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• 제9권5호
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• pp.1654-1659
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• 2014

Tunneling field-effect transistors (TFETs) are very applicable to low standby-power application by their virtues of low off-current ($I_{off}$) and small subthreshold swing (S). However, low on-current ($I_{on}$) of silicon-based TFETs has been pointed out as a drawback. To improve $I_{on}$ of TFET, a gate-all-around (GAA) TFET based on III-V compound semiconductor with InAs/InGaAs/InP multiple-heterojunction structure is proposed and investigated. Its performances have been evaluated with the gallium (Ga) composition (x) for $In_{1-x}Ga_xAs$ in the channel region. According to the simulation results for $I_{on}$, $I_{off}$, S, and on/off current ratio ($I_{on}/I_{off}$), the device adopting $In_{0.53}Ga_{0.47}As$ channel showed the optimum direct-current (DC) performance, as a result of controlling the Ga fraction. By introducing an n-type InGaAs thin layer near the source end, improved DC characteristics and radio-frequency (RF) performances were obtained due to boosted band-to-band (BTB) tunneling efficiency.

• 조명전기설비학회논문지
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• 제22권6호
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• pp.141-147
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• 2008

본 논문에서는 화합물 반도체 및 CMOS 공정을 이용하여 수신기에서 주파수를 하향 변환하는 수신믹서를 설계하였다. 주파수 하향변환 믹서의 기본적인 이론과 구조에 대해 살펴보고 이중평형 믹서 구조와 광대역 특성을 얻기위해 매칭회로 대신 고주파와 국부발진기의 입력단에 싱글엔드 신호를 차분신호로 변환하기 위한 능동발룬을 결합한 믹서회로를 화합물과 CMOS 공정으로 설계한다. CMOS 공정을 이용하여 제작한 능동발룬 내장 믹서는 $2{\sim}6[GHz]$ 대역에서 1[dB] 이하의 이득오차와 $3[^{\circ}]$ 이하의 위상오차를 가지며 $2{\sim}6[GHz]$ 대역에서 변환이득 $-1{\sim}-6[dB]$ 특성을 얻었다. 모의실험 결과 화합물 공정을 이용하여 능동 발룬을 결합한 믹서는 $2{\sim}6[GHz]$ 주파수대역에서 $-2[dBm]$의 국부발진기 입력에 대해 약 7[dB]의 변환이득과 5.8[GHz]에서 -10[dBm]의 입력 P1[dB]특성을 나타낸다.

• 한국정보처리학회:학술대회논문집
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• 한국정보처리학회 2002년도 춘계학술발표논문집 (하)
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• pp.1563-1566
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• 2002

교통정체의 증가로 의하여 지불수단에 관한 관심이 증가되고 있다. 또한, 전자화폐 지불에 대한 수많은 프로젝트가 진행되고 있다. 교통시스템은 정보처리, 통신, 제어, 전자 등 다양한 첨단기술들로 구성되며 이러한 기술들을 교통관련에 접목함으로서 더욱 안전한 인명구조 및 시간과 경비절감을 더욱 효율적으로 추구 할 수가 있다. 특히, 운전자의 차량소통을 위해 접촉식으로 제공하는 시스템과 이로 인해 야기되는 문제점들을 해결하기 위한 제어에 관련된 전자화폐 시스템을 연구하였다. 이 논문에서는 전자지불 개념을 ATM 방식으로 도입하여 요구사항을 반영하고 기존에 개발되어 사용하고 있는 동전투입방식을 재구성하여 전체통합하여 새로운 ITS 개발에 사용하는 일련의 과정을 정리하였다. 그 결과 기존방식보다 차량대기속도 및 평균주행속도가 15% 에서 40% 가량 개선됨을 확인할 수가 있었다. 특히 이런 개념은 국내 ITS 개발의 특수상황에 적용하여 큰 효과를 얻을 수 있을 것으로 기대한다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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• pp.167-171
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• 2003

We report the material and electrical properties of $CoSi_2$ and $NiSi_2$contacts to n-type 4H-SiC depending on the post-annealing and the metal covering conditions. The Ni and Co silicides are deposited by RF sputtering with Ni/Si/Ni and Co/Si/Co films separately deposited on 4H-SiC substrates. The deposited films are annealed at $800\;^{\circ}C$ in $Ar:H_2$ (9:1) gas ambient. Results of the specific surface resistivity measurements show that the resistivity of the Co-based metal contact was the one order lower than that of the Ni-based contact. The specific contact resistance was measured by a transmission line technique, and the specific contact resistivity of $1.5{\times}10^{-6}\;{\Omega}\;cm^2$ is obtained for Co/Si/Co metal structures after a two-step annealing; at $550\;^{\circ}C$ for 10 min and $800\;^{\circ}C$ for 3min. The physical properties of the contacts were examined by using XRD and AES, and the results indicate that the Co-based metal contacts have better structural stability of silicide phases formed after the high temperature annealing.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2000년도 제18회 학술발표회 논문개요집
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• pp.67-67
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• 2000

CeO2는 cubic 구조의 일종인 CaR2 구조를 가지고 있으며 격자상수가 Si의 격장상수와 매우 비슷하여 Si 기판위에 에피텍셜하게 성장할 수 있는 가능성이 매우 크다. 따라서 SOI(silicon-on-insulator)구조의 실현을 위하여 Si 기판위에 CeO2 박막을 에피텍셜하게 성장시키려는 많은 노력이 있어왔다. 또한 metal-ferroelectric-semiconductor field effect transistor)에서 ferroelectric 박막과 Si 기판사이의 완충층으로 사용된다. 이러한 CeO2의 응용을 위해서는 Si 기판 위에 성장된 CeO2 박막의 방위성 및 CeO2/Si 구조의 전기적 특성을 알아보는 것이 매우 중요하다. 본 연구에서는 Si(100) 기판위에 CeO2(200)방향으로 성장하는 박막과 EcO2(111) 방향으로 성장하는 박막을 rf magnetron sputtering 방법으로 증착하여 각각의 구조적, 전기적 특성을 분석하였다. RCA 방법으로 세정한 P-type Si(100)기판위에 Ce target과 O2를 사용하여 CeO2(200) 및 CeO2(111)박막을 증착하였다. 증착후 RTA(rapid thermal annealing)방법으로 95$0^{\circ}C$, O2 분위기에서 5분간 열처리를 하였다 이렇게 제작된 CeO2 박막의 구조적 특성을 XRD(x-ray diffraction)방법으로 분석하였고, Al/CeO2/Si의 MIS(metal-insulator-semiconductor)구조를 제작하여 C-V (capacitance-voltage), I-V (current-voltage) 특성을 분석하였으며 TEM(transmission electron microscopy)으로 증착된 CeO2막과 Si 기판과의 계면 특성을 연구하였다. C-V특성에 있어서 CeO2(111)/Si은 CeO2(111)의 두께가 증가함에 따라 hysteresis windows가 증가한 방면 CeO2(200)/Si은 hysteresis windows가 아주 작을뿐만 아니라 CeO2(200)의 두께가 증가하더라도 hysteresis windos가 증가하지 않았다. CeO2(111)/Si과 CeO2(200)/Si의 C-V 특성의 차이는 CeO2(111)과 CeO2(200)이 Si 기판에 의해 받은 stress의 차이와 이에 따른 defect형성의 차이에 의한 것으로 사료된다.

• Radiation Oncology Journal
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• 제9권2호
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• pp.171-176
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• 1991

8 MHz 고주파 유전형 가열장치로 모형을 가열할 때에 전극의 크기와 모형의 두께에 따른 온도 분포를 알아보기 위하여 다양한 크기의 전극과 다양한 두께의 모형을 조합하여 실험하였다. 전극은 10, 15, 20, 25, 그리고 30 cm 크기를 사용하였고 모형은 10, 15, 20, 25, 그리고 30 cm 두께를 사용하였다. 모형의 두께가 25 cm 이상일 경우에는 전극의 크기가 모형의 두께보다 크거나 혹은 같을때에 중심부에 균일한 온도 분포를 얻을 수 있었으나, 모형의 두께가 20 cm 이하일 경우에는 전극의 크기가 모형의 두께와 같을 때는 균일한 온도 분포를 얻을 수 없었고 전극의 크기가 모형의 두께보다 클 때만 균일한 온도 분포를 얻을 수 있었다. 크기가 다른 한쌍의 전극을 사용하여 가열시에는 작은 전극 쪽으로 가열 부분이 집중되었고 그 현상은 전극크기의 차가 클 수록 심하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.145-145
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• 2010

In this paper, we report that the effects of hydrogen doping on the electrical and optical properties of typical transparent conducting oxide films such as ZnO and $SnO_2$ prepared by magnetron sputtering. Recently, density functional theory (DFT) calculations have shown strong evidence that hydrogen acts as a source of n-type conductivity in ZnO. In this work, the beneficial effect of hydrogen incorporation on Ga-doped ZnO thin films was demonstrated. It was found that hydrogen doping results a noticeable improvement of the conductivity mainly due to the increases in carrier concentration. Extent of the improvement was found to be quite dependent on the deposition temperature. A low resistivity of $4.0{\times}10^{-4}\;{\Omega}{\cdot}cm$ was obtained for the film grown at $160^{\circ}C$ with $H_2$ 10% in sputtering gas. However, the beneficial effect of hydrogen doping was not observed for the films deposited at $270^{\circ}C$. Variations of the electrical transport properties upon vacuum annealing showed that the difference is attributed to the thermal stability of interstitial hydrogen atoms in the films. Theoretical calculations also suggested that hydrogen forms a shallow-donor state in $SnO_2$, even though no experimental determination has yet been performed. We prepared undoped $SnO_2$ thin films by RF magnetron sputtering under various hydrogen contents in sputtering ambient and then exposed them to H-plasma. Our results clearly showed that the hydrogen incorporation in $SnO_2$ leads to the increase in carrier concentration. Our experimental observation supports the fact that hydrogen acting as a shallow donor seems to be a general feature of the TCOs.

• 상하수도학회지
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• 제33권2호
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• pp.111-119
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• 2019

Electro-coagulation process has been gained an attention recently because it could overcome the membrane fouling problems in MBR(Membrane bio-reactor). Effect of the key operational parameters in electro-coagulation, current density(${\rho}_i$) and contact time(t) on membrane fouling reduction was investigated in this study. A kinetic model for ${\rho}_i$ and t required to reduce the membrane fouling was suggested under different MLSS(mixed liquor suspended solids) concentration. Total 48 batch type experiments of electro-coagulations under different sets of current densities(2.5, 6, 12 and $24A/m^2$), contact times(0, 2, 6 and 12 hr) and MLSS concentration(4500, 6500 and 8500mg/L) were carried out. After each electro-coagulation under different conditions, a series of membrane filtration was performed to get information on how much of membrane fouling was reduced. The membrane fouling decreased as the ${\rho}_i$ and t increased but as MLSS decreased. Total fouling resistances, Rt (=Rc+Rf) were calculated and compared to those of the controls (Ro), which were obtained from the experiments without electro-coagulation. A kinetic approach for the fouling reduction rate (Rt/Ro) was carried out and three equations under different MLSS concentration were suggested: i) ${\rho}_i^{0.39}t=3.5$ (MLSS=4500 mg/L), ii) ${\rho}_i^{0.46}t=7.0$ (MLSS=6500 mg/L), iii) ${\rho}_i^{0.74}t=10.5$ (MLSS=8500 mg/L). These equations state that the product of ${\rho}_i$ and t needed to reduce the fouling in certain amounts (in this study, 10% of fouling reduction) is always constant.

• 반도체디스플레이기술학회지
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• 제21권4호
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• pp.138-143
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• 2022

We analyzed the influence of post-annealing on Ga₂O₃/n-type 4H-SiC heterojunction diode. Gallium oxide (Ga₂O₃) thin films were deposited by radio frequency (RF) sputtering. Post-deposition annealing at 950℃ in an Oxygen atmosphere was performed. The material properties of Ga₂O₃ and the electrical properties of the diodes were investigated. Atomic Force Microscopy (AFM), X-Ray Diffraction and Scanning Electron Microscope (SEM) images show a significant increase in the roughness and crystallinity of the O₂-annealed films. After Oxygen annealing X-ray Photoelectron Spectroscopy (XPS) shows that the atomic ratio of oxygen increases which is related to a decrease in oxygen vacancy within the Ga₂O₃ film. The O₂-annealed diodes exhibited higher on-current and lower leakage current. Moreover, the ideality factor, barrier height, and thermal activation energy were derived from the current-voltage curve by increasing the temperature from 298 - 434K.

• KSII Transactions on Internet and Information Systems (TIIS)
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• 제15권11호
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• pp.3950-3969
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• 2021

Radio Frequency (RF)-based indoor localization technologies play significant roles in various Internet of Things (IoT) services (e.g., location-based service). Most such technologies require that all the devices comply with a specified technology (e.g., WiFi, ZigBee, and Bluetooth). However, this requirement limits its application scenarios in today's IoT context where multiple devices complied with different standards coexist in a shared environment. To bridge the gap, in this paper, we propose a cross-technology localization approach, which is able to localize target nodes using a different type of devices. Specifically, the proposed framework reuses the existing WiFi infrastructure without introducing additional cost to localize Non-WiFi device (i.e., ZigBee). The key idea is to leverage the interference between devices that share the same operating frequency (e.g., 2.4GHz). Such interference exhibits unique patterns that depend on the target device's location, thus it can be leveraged for cross-technology localization. The proposed framework uses Principal Components Analysis (PCA) to extract salient features of the received WiFi signals, and leverages Dynamic Time Warping (DTW), Gradient Boosting Regression Tree (GBRT) to improve the robustness of our system. We conduct experiments in real scenario and investigate the impact of different factors. Experimental results show that the average localization accuracy of our prototype can reach 1.54m, which demonstrates a promising direction of building cross-technology technologies to fulfill the needs of modern IoT context.