• Journal of the Korea Institute of Information and Communication Engineering
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• v.5 no.1
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• pp.166-172
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• 2001

A RF wideband receiver for INMARSAT-B satellite communications system was composed of low noise amplifier and high gain amplifier, The low noise amplifier used to the resistive decoupling circuit for input impedance matching and self-bias circuits for low noise. The high gain amplifier consists of matched amplifier type to improve receiver gain. The active bias circuit can be used to provide temperature stability without requiring the large voltage drop or relatively high-dissipated power needed with a bias stabilization resistor. The bandpass filter was used to reduce a spurious level. As a result, the characteristics of the receiver implemented here show more than 60 dB in gain and less than 1.8:1 in input and output voltage standing wave ratio(VSWR), especially the carrier to noise ratio which is input signal level -126.7 dB m at 1537.5 MHz is a 45.23 dB /Hz at a 1.02 kHz.

• Korean Journal of Materials Research
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• v.13 no.7
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• pp.465-472
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• 2003

Pd/Ge/Ti/Pt and Pd/Ge/Pd/Ti/Au ohmic contacts to n-type InGaAs were investigated for applications to AlGaAs/GaAs HBT emitter ohmic contacts. In the Pd/Ge/Ti/Pt ohmic contact minimum specific contact resistivity of $3.7${\times}$10^{-6}$ $\Omega$$\textrm{cm}^2$ was achieved by rapid thermal annealing at $^400{\circ}C$/10 sec. In the Pd/Ge/Ti/Au ohmic contact, minimum specific contact resistivity of $1.1${\times}$10^{-6}$ $\Omega$$\textrm{cm}^2$ was achieved by annealing at 40$0^{\circ}C$/10 sec but the ohmic performance was degraded with increasing annealing temperature due to the reaction between the ohmic contact materials and the InGaAs substrate. However, non-spiking planar interface and relatively good ohmic contact (high-$10^{-6}$ /$\Omega$$\textrm{cm}^2$) were maintained after annealing at $450^{\circ}C$/10 sec. Therefore, these thermally stable ohmic contact systems are promising candidates for compound semiconductor devices. RF performance of the AlGaAs/GaAs HBT was also examined by employing the Pd/Ge/Ti/Pt and Pd/Ge/Pd/Ti/Au systems as emitter ohmic contacts. Cutoff frequencies were 63.5 ㎓ and 65.0 ㎓, respectively, and maximum oscillation frequencies were 50.5 ㎓ and 51.3 ㎓, respectively, indicating very successful high frequency operations.

• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.7
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• pp.83-89
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• 1989

Ferroelectric $PbTiO_3$ thin film is deposited with rf sputtering at substrate temperature of $100-150^{\circ}C$. It is found that this has pyrochlore structure of amorphous type by X-ray diffractive analysis. Thermal annealing has excellent characteristics at $550^{\circ}C$ and laser annealing has best crystalline structure in case of scanning with 50 watts. Interface states in MFST and MFOST structure with a $PbTiO_3$ ferroelectric thin film gate have been investigated from analysis of C-V data. The interface states density has been drastically reduced by inserting an oxide layer between ferroelectric and semiconductor. The observed effect increase feasibility of employing ferroelectric thin films such as nonvolatile memory field effect transistor, IR optical FET, and Image Devices with a ferroelectric layer.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.13 no.4
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• pp.629-635
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• 2009

The FSK duplex remote controlling wireless transmission units with a common local oscillator circuit for transmitter and receiver are designed and implemented in this paper. In the FSK full-duplex the channel frequency for Tx/Rx is allocated, a common switching oscillator circuit for Tx/Rx is designed in the FSK half-duplex scheme. Both of FSK units get functions of automatic channel detection for busy channels and channel configuration for an idle channel in order to reduce the RF channel interference and are designed as a remote controller with small-sized low power of 10mW and the 400MHz-colpitz type PLL configuration of 50kHz channel separation. The full-duplex Tx/Rx link frequency gets frequency difference of 42.8MHz, which is double of 21.4MHz IF frequency.

• The Transactions of the Korean Institute of Power Electronics
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• v.14 no.6
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• pp.440-448
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• 2009

Facility power-line electromagnetic interference (EMI) filters are used to provide radio frequency(RF) isolation between dedicated power distribution services and noise sensitive local power distribution systems. This type of EMI filters generally needs a high current capacity and, in some special applications, a high insertion loss of a minimum 100dB from 14kHz through 10GHz per MIL-STD 220 is required. This paper deals with an analysis and design of a wideband facility power-line EMI filter with the above requirements. The characteristics of the inductor and capacitor at high frequencies are investigated. The characteristics and design method of the facility EMI filter with a high order LC network are also presented. The prototype filter is finally implemented and its performance is verified from the experimental results.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.300-300
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• 2008

In this study, the advanced DuoPIGatron-type ion beam (IB) system was applied to inorganic thin film for aligning liquid crystal (LC). LC alignment on $Ta_2O_5$ via IB irradiation was embodied. As a result of IB irradiation, the homogeneously aligned liquid crystal display (LCD) on $Ta_2O_5$ was observed with low pretilt angles. The $Ta_2O_5$ were deposited on indium-tin-oxide coated Coming 1737 glass substrates by rf magnetron sputtering at $200^{\circ}C$. The deposition process resulted in forming very uniform thin film on glass substrates without any defects. To confirm the application of the inorganic alignment on modem display optical devices, we fabricated twisted nematic LCD and measured optical property and response time. As a result of the experiment, the electro optical characteristics of the LCD fabricated by using IB irradiation on $Ta_2O_5$ alignment layer were similar with the other LCD fabricated by using rubbing process.

• International Journal of Internet, Broadcasting and Communication
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• v.10 no.1
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• pp.71-76
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• 2018

The technology convergence of television, communication, and computing devices enables the rich social and entertaining experience through Smart TV in personal living space. The powerful smart TV computing platform allows to provide various user interaction interfaces like IR remote control, web based control, body gesture based control, etc. The presently used smart TV interaction user control methods are not efficient and user-friendly to access different type of media content and services and strongly required advanced way to control and access to the smart TV with easy user interface. This paper propose the optical wireless communication (OWC) based remote controller design for Smart TV using smart device Flashlights. In this approach, the user smart device act as a remote controller with touch based interactive smart device application and transfer the user control interface data to smart TV trough Flashlight using visible light communication method. The smart TV built-in camera follows the optical camera communication (OCC) principle to decode data and control smart TV user access functions according. This proposed method is not harmful as radio frequency (RF) radiation does it on human health and very simple to use as well user does need to any gesture moves to control the smart TV.

• Journal of the Semiconductor & Display Technology
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• v.9 no.1
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• pp.41-47
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• 2010

The effects of thermal treatment on CNTs, which were coated with a-$CN_x$ thin film, were investigated and related to variations of chemical bonding and morphologies of CNTs and also properties of field emission induced by thermal treatment. CNTs were directly grown on nano-sized conical-type tungsten tips via the inductively coupled plasma-chemical vapor deposition (ICP-CVD) system, and a-$CN_x$ films were coated on the CNTs using an RF magnetron sputtering system. Thermal treatment on a-$CN_x$ coated CNT-emitters was performed using a rapid thermal annealing (RTA) system by varying temperature ($300-700^{\circ}C$). Morphologies and microstructures of a-$CN_x$/CNTs hetero-structured emitters were analyzed by FESEM and HRTEM. Chemical composition and atomic bonding structures were analyzed by EDX, Raman spectroscopy, and XPS. The field emission properties of the a-$CN_x$/CNTs hetero-structured emitters were measured using a high vacuum (below $10^{-7}$ Torr) field-emission measurement system. For characterization of emission stability, the fluctuation and degradation of the emission current were monitored in terms of operation time. The results were compared with a-$CN_x$ coated CNT-emitters that were not thermally heated as well as with the conventional non-coated CNT-emitters.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.168-168
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• 1999

Recently, Fe/Si multilayered films (MLF) have been a focus of interest due to the strong antiferromagnetic (AF) coupling observed in such kind of MLF originates from the same nature as in the metal/metal MLF. In particular, a question of whether the spacer layer in the Fe/Si MLF is metallic or semiconducting is of interest. In spite of various experimental techniques envolved in the study, the chemical composition and the properties of the interfacial regions in the MLF exhibiting the AF coupling is still questionable. The nature of the AF coupling and the interfacial properties of Fe/Si MLF are investigated in this study. A series of Fe/Si MLF with a fixed nominal thickness of Fe(3nm) and a variable thickness of Sk(1.0-2.2nm) were deposited by RF-sputtering onto glass substrates at room temperature. The atomic structures and the actual sublayer thicknesses of the Fe/Si MLF are investigated by using x-ray diffraction. The magnetic-field dependence of the equatorial Kerr effect clearly shows an appearance of the AF coupling between Fe sublayers at tsi = 1.5 - 1.8 nm. the drastic discrepancies between the experimental magnetooptical (MO) and optical properties, and based on the assumption of sharp interfaces between Fe and Si sublayers leads to a conclusion that pure si is absent in the AF-coupled Fe/Si MLF. Introducing in the model nonmagnetic semiconducting FeSi alloy layers between Fe and Si sublayers or as spacer between pure Fe sublayers only slightly improves the agreement between model and experiment. A reasonable agreement between experimental and simulated MO spectra was reached with using the fitted optical properties for the spacer with a typical metallic type of behavior. The results of the magnetic properties measured by vibrating sample magnetometer and magnetic circular dichroism are also analyzed in connection with the MO and optical properties.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.79-79
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• 1999

The varous techniques for fabrication of si or metal tip as a field emission electron source have been reported due to great potential capabilities of flat panel display application. In this report, 240nm thermal oxide was initially grown at the p-type (100) (5-25 ohm-cm) 4 inch Si wafer and 310nm Si3N4 thin layer was deposited using low pressure chemical vapor deposition technique(LPCVD). The 2 micron size dot array was photolithographically patterned. The KOH anisotropic etching of the silicon substrate was utilized to provide V-groove formation. After formation of the V-groove shape, dry oxidation at 100$0^{\circ}C$ for 600 minutes was followed. In this procedure, the orientation dependent oxide growth was performed to have a etch-mask for dry etching. The thicknesses of the grown oxides on the (111) surface and on the (100) etch stop surface were found to be ~330nm and ~90nm, respectively. The reactive ion etching by 100 watt, 9 mtorr, 40 sccm Cl2 feed gas using inductively coupled plasma (ICP) system was performed in order to etch ~90nm SiO layer on the bottom of the etch stop and to etch the Si layer on the bottom. The 300 watt RF power was connected to the substrate in order to supply ~(-500)eV. The negative ion energy would enhance the directional anisotropic etching of the Cl2 RIE. After etching, remaining thickness of the oxide on the (111) was measured to be ~130nm by scanning electron microscopy.