• ETRI Journal
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• v.25 no.3
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• pp.195-202
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• 2003

This paper proposes a new LDMOSFET structure with a trenched sinker for high-power RF amplifiers. Using a low-temperature, deep-trench technology, we succeeded in drastically shrinking the sinker area to one-third the size of the conventional diffusion-type structure. The RF performance of the proposed device with a channel width of 5 mm showed a small signal gain of 16.5 dB and a maximum peak power of 32 dBm with a power-added efficiency of 25% at 2 GHz. Furthermore, the trench sinker, which was applied to the guard ring to suppress coupling between inductors, showed an excellent blocking performance below -40 dB at a frequency of up to 20 GHz. These results confirm that the proposed trenched sinker should be an effective technology both as a compact sinker for RF power devices and as a guard ring against coupling.

• Journal of Industrial Technology
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• v.29 no.B
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• pp.145-149
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• 2009

A RF-DC converter is one of the most important components for a wireless power transmission. It has been developed for many applications such as space solar power system, and Radio Frequency Identification(RFID). In this paper, we designed three types of RF-DC converter and compare the performance of each. All types RF-DC convertoer have a maximum conversion efficiency at input power level of 0 dBm~5 dBm and RF-DC converter of third type was the best performance that has a 21.9% of conversion efficiency.

• Geomechanics and Engineering
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• v.31 no.1
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• pp.113-127
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• 2022

The undrained shear strength of soil is considered one of the engineering parameters of utmost significance in geotechnical design methods. In-situ experiments like cone penetration tests (CPT) have been used in the last several years to estimate the undrained shear strength depending on the characteristics of the soil. Nevertheless, the majority of these techniques rely on correlation presumptions, which may lead to uneven accuracy. This research's general aim is to extend a new united soft computing model, which is a combination of random forest (RF) with grasshopper optimization algorithm (GOA) to the pile set-up parameters' better approximation from CPT, based on two different types of data as inputs. Data type 1 contains pile parameters, and data type 2 consists of soil properties. The contribution of this article is that hybrid GOA - RF for the first time, was suggested to forecast the pile set-up parameter from CPT. In order to do this, CPT data and related bore log data were gathered from 70 various locations across Louisiana. With an R² greater than 0.9098, which denotes the permissible relationship between measured and anticipated values, the results demonstrated that both models perform well in forecasting the set-up parameter. It is comprehensible that, in the training and testing step, the model with data type 2 has finer capability than the model using data type 1, with R² and RMSE are 0.9272 and 0.0305 for the training step and 0.9182 and 0.0415 for the testing step. All in all, the models' results depict that the A parameter could be forecasted with adequate precision from the CPT data with the usage of hybrid GOA - RF models. However, the RF model with soil features as input parameters results in a finer commentary of pile set-up parameters.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.47-47
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• 2008

P-type transparent semiconductor $SrCu_2O_2$ thin films have been prepared by RF sputtering using low-alkali glass for LCD and quartz as substrates. Single phase of $SrCu_2O_2$ powder was obtained by heating a stoichiometric mixture of CuO and $SrCO_3$ at 1223K for 96h under N2 gas flow, and target was fabricated at 1243K for 24h. Room temperature conductivity of the sintered body was about 0.02S/cm, and the activation energy in the temperature range of $-50^{\circ}C$~RT and RT~$150^{\circ}C$ were 0.18eV, 0.07eV, respectively. Effects of deposition pressure and post-annealing temperature on the electrical and optical properties of the obtained thin film have been investigated.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.15 no.9
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• pp.872-879
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• 2004

The TX/RX broadband L-type circular polarization antenna using LTCC(Low Temperature Co-fired Ceramic) for satellite communication at K, Ka band(20～21 GHz/30～31 GHz) has been presented. This antenna has been analyzed in compensation for LTCC with relative permittivity 5.2 and could have been integrated with RF component. Also antennas on LTCC enable :o reduce loss of RF system due to integrate with RF circuits and to light weight, and thus, generally one can reduce size of the RF system. As the geometry of this antenna presented is made simple by L type of monopole antenna, it is easily manufactured by LTCC progress and enables to reduce loss.

• Journal of Advanced Marine Engineering and Technology
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• v.38 no.3
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• pp.302-311
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• 2014

In this work, a FTTL (fishbone-type transmission line) structure was fabricated on PES (polyether sulfone) for a realization of transparent flexible wireless communication device, and its RF characteristics were investigated. According to the results, the FTTL on PES showed a short wavelength characteristic compared with conventional coplanar waveguide. Concretely, the wavelength of the FTTL was 2.23 mm at 50 GHz, which was 56.6 % of the conventional coplanar waveguide. According to the bandwidth extraction result, the passband of the FTTL on PES was 608 GHz. Unlike conventional periodic structures, the characteristic impedance of the FTTL on PES showed a very low frequency dependency, which means that the FTTL on PES can be used for application to transmission line and distributed passive components with a broadband operation frequency.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.48-48
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• 2007

P-type transparent conducting $CuGaO_2$ thin films have been prepared by DC/RF sputtering using Quartz(0001) and sapphire(0001) substrates. The target was fabricated by heating a stoichiometric mixture of CuO and $Ga_2O_3$ at 1373K for 12h under $N_2$ atmosphere. The film were deposited under mixture gas of Ar and $O_2(Ar:O_2=4:1)$ during 10~30min. and the as-deposited films were annealed at 1123K and $N_2$ atmosphere. Room temperature conductivity and the activation energy of the sintered body in the temperature range of 223K ~ 423K were 0 004S/cm, 1.9eV, respectively. XRD revealed that all of the as-deposited films were amorphous. Heating of the films deposited on Quartz substrates above 1123K resulted in crystallization with a second phase of $CuSiO_3$, which was assumed owing to reaction with Quartz substrate. The single phase of $CuGaO_2$ was obtained at the film deposited on the sapphire substrates. The transmittance after annealing of DC- and RF-sputtered films were 55~75% at 550nm. From the transmittance and reflectance measurement. the direct band gap of the DC/RF-sputtered films were 3.63eV and 3.57eV. and there was little difference between DC and RF sputtered films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.68-69
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• 2007

We have prepared p-type ZnO:Al films in pure oxygen ambient on n-type Si (100) and homo buffer layers by RF magnetron sputtering system. Hall effect measurement shows that the film annealed at $600^{\circ}C$ possesses p-type conductivity and the film annealed $800^{\circ}C$ does not. PL spectra show different properties of p- and n-type ZnO film. The corresponding peaks of PL spectra of p- and n-type show at about same positions. The intensities of high photon energy of n-type film on buffer shows decreasing tendency.

• Journal of the Semiconductor & Display Technology
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• v.9 no.1
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• pp.29-33
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• 2010

Recently, the growth of ZnO thin film on glass substrate has been investigated extensively for transparent thin film transistor. We have studied the phase transition of ZnO thin films from metal to semiconductor by changing RF power in the deposition process by RF magnetron sputtering system. The structural, electric, and optical properties of the ZnO thin films were investigated. The film deposited with 75 watt of RF power showed n-type semiconductor characteristic having suitable resistivity $-3.56\;{\times}\;10^{+1}\;{\Omega}cm$, carrier concentration $-2.8\;{\times}\;10^{17}\;cm^{-3}$, and mobility $-0.613\;cm^2V^{-1}s^{-1}$ while other films by 25, 50, 100 watt of RF power closed to metallic films. From the surface analysis (AFM), the number of crystal grain of ZnO thin film increased as RF power increased. The transmittance of the film was over 88% in the visible region regardless of the change in RF power.

• Proceedings of the IEEK Conference
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• 2005.11a
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• pp.785-788
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• 2005

In this study, micro-scale, high-performance, solenoid-type RF chip inductors were investigated. The size of the RF chip inductors fabricated in this work was $1.0{\times}0.5{\times}0.5mm^3$ The material and shape of the core were 96% $Al_2O_3$ and I-type. The material and number of turn of coil were copper (Cu) and 6. The diameter ($40{\mu}m$) of coil and length (0.35mm) of solenoid were determined by a Maxwell three-dimensional field simulator to maximize the performance of the inductors. High frequency characteristics of the inductance (L) and quality-factor (Q) of developed inductors were measured using an RF Impedance/Material Analyzer (HP4291B with HP16193A test fixture). The inductors developed have inductances of 10.8nH and quality factors of 25.2 at 250MHz, and show results comparable to those measured for the inductors prepared by CoilCraftTm that is one of the best chip inductor company in the world. The simulated data predicted the high-frequency data of the Land Q of the inductors developed well.