• The Transactions of The Korean Institute of Electrical Engineers
• /
• v.60 no.6
• /
• pp.1175-1177
• /
• 2011

The SBN thin films were deposited on Pt/Ti/$SiO_2$/Si and p-type Si(100) substrate by rf magnetron sputtering method using $Sr_{0.7}Bi_{2.3}Nb_2O_9$ ceramic target. SBN thin films deposited were annealed at 600~800[$^{\circ}C$] by furnace in oxygen atmosphere during 40min. The polarization characteristics have been investigated to confirm the possibility of the SBN thin films for the application to destructive read out ferroelectric random access memory. The maximum remanent polarization and the coercive voltage are 0.6[${\mu}C/cm^2$], 1.2[V] respectively at annealing temperature of 800[$^{\circ}C$]. The leakage current density was the $2.57{\times}10^{-6}[A/cm^2]$ at an applied voltage of 5[V] at annealing temperature of 650[$^{\circ}C$]. Also, the fatigue characteristics of SBN thin films did not change up to $10^8$ switching cycles.

• Transactions on Electrical and Electronic Materials
• /
• v.14 no.3
• /
• pp.116-120
• /
• 2013

This paper proposes a novel RF MEMS dc-contact switch with stiff membrane on a quartz substrate. The uniqueness of this work lies in the utilization of a seesaw mechanism to restore the movable part to its rest position. The switching action is done by using separate pull-down and pull-up electrodes, and hence operation of the switch does not rely on the elastic recovery force of the membrane. One of the main problems faced by electrostatically actuated MEMS switches is the high operational voltages, which results from bending of the membrane, due to internal stress gradient. This is resolved by using a stiff and thick membrane. This membrane consists of flexible meanders, for easy movement between the two states. The device operates with an actuation voltage of 6.43 V, an insertion loss of -0.047 dB and isolation of -51.82 dB at 2 GHz.

• 한국정보통신설비학회:학술대회논문집
• /
• 2009.08a
• /
• pp.305-308
• /
• 2009

This paper presents the design and analysis of RF Front End for Wireless Heartbeat measurement System. In this work LNA, an inductor connected at the gate of the cascode transistor and capacitive cross-coupling are strategically combined to reduce the noise and the nonlinearity influences of the cascode transistors in a differential LNA. The Mixer is implemented by using the Gilbert-type configuration, cross pmos injection technique and the resonating technique for the tail capacitance. The resulting LNA achieves 1.26 dB NF, better than 1.88dB NF Typical Also Mixer resulting achieves 9.8dB at 100KHz.

• Journal of the Korean Ceramic Society
• /
• v.31 no.6
• /
• pp.601-608
• /
• 1994

Aluminum oxide thin films were deposited on p-type(100) silicon substrates by electron cyclotron resonance plasma enhanced CVD(ECR-PECVD) using TMA[Al(CH3)3] and oxygen as reactant gases at 16$0^{\circ}C$ or lower temperatures. The aluminum oxide films deposited by ECR-PECVD have the amorphous structure with the refractive index of 1.62~1.64 and the O/Al ratio of 1.6~1.7. Oxygen flow rate necessary for the stable deposition of the aluminum oxide films increases as the deposition temperature increases. It was found from the OES analysis that the ECR plasma had les cooling effect by introducing the TMA reactant gas in comparison with the RF plasma. The properties of aluminum oxide films prepared by ECR-PECVD were compared with those prepared by RF-PECVD. The ECR-PECVD aluminum oxide films have the higher refractive indices, the lower contents of impurities (H and C) and the stronger wet etch resistance than those deposited by RF-PECVD.

• Journal of electromagnetic engineering and science
• /
• v.6 no.4
• /
• pp.217-221
• /
• 2006

Multipactor-free S-band duplexer based on inter-digital cavity type filter is proposed and demonstrated by in-house mulitpactor test facility for satellite RF components. Multipactor sensitivity of designed duplexer is analyzed by checking it out the maximum field accumulated region inside duplexer and calculating the electric field intensities at each resonator using 3D EM simulation in order to restrict the minimum gap distance as 2.5 mm which handles 43.13 dBm RF input power. Multipactor threshold was finally detected at 44 dBm in experiment for pulse mode test. The developed multipactor test method is cost effective, simple structure and gives a good agreement compared with the previous high cost MP test methodologies.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.04b
• /
• pp.153-156
• /
• 2004

The $Pb(Zr_{0.4}Ti_{0.6})O_3/Pb(Zr_{0.6}Ti_{0.4})O_3$ [PZT(4060)/(6040)] heterolayered thin films were deposited by RF sputtering method on the $Pt/TiO_2/SiO_2/Si$ substrate. The effects of the structural and dielectric properties of PZT heterolayered thin films were investigated. The MFM(Metal Ferroelectric Metal) type capacitors were made using the PZT(6040)/(4060) heterolayered thin films deposited with optimum deposition condition. An enhanced dielectric property was observed in the PZT(4060)/(6040) thin films. Investigating the dielectric constant and dielectric loss characteristics. the application for the next-generation dielectric thin films and memory devices were studied.

• 한국신재생에너지학회:학술대회논문집
• /
• 2011.11a
• /
• pp.61.2-61.2
• /
• 2011

본 연구에서는 박막 태양전지용 투명전극으로 사용하기 위해서 Gun-type RF 마그네트론 스퍼트링을 이용하였다. 챔퍼안의 타겟은 AZO타겟(Zn: 98[wt.%], Al:2[wt.%]을 장착하였고 공정압력은 고진공을 유지하였다. 온도는 $300^{\circ}C$로 고정하였고 전력은 70W로 고정하였다. $Ar^+$ 가스유량비를 20sccm~100sccm으로 변화를 주어 기판 위에 AZO를 증착하여 AZO의 구조적 및 광학적 특성의 의존성을 알아보았다. 모든 가스변화에서 400에서 700 nm까지의 가시광 영역에서의 AZO 박막의 평균 투과도는 약 85% 이상의 우수한 투과율을 보인다. AZO 박막 내의 결정 구조는 (002)면으로 우선 배향을 하는 wurtzite 구조를 가지며, $Ar^+$변화에 의해 두께가 증가하면서 결정립의 주상 (columnar) 성장이 향상되고 결정립의 크기도 증가한다. 이러한 경향성은 $Ar^+$변화에 의해 결정성이 향상된다는 것을 의미한다. 이와 같은 구조 및 광학 특성을 가지는 유리 기판 위에 증착된 AZO는 박막 태양전지용 투명 전극으로 응용이 가능할 것이다.

• Magazine of the Korean Society of Agricultural Engineers
• /
• v.40 no.6
• /
• pp.79-88
• /
• 1998

This study was conducted to measure the moisture content of soil using RF impedance in the range of 1 to 30MHz. Considering the water potential flow in the soils, two types of sensor such as parallel cylinder and perpendicular plate type were fabricated and tested. The capacitance and resistance of sonsors for soil samples having moisture content range of 2 to 27% were measured by Q-meter (HP4342). The higher soil moisture content was and the larger soil bulk density was, the more the capacitance of sensors increased. To eliminate the effect of bulk density on measuring soil moisture content using RF impedance, two kinds of model having the density independent functions such as the ratio of capacitance change to conductance change and weight of water and dry soils respectively were developed and estimated by regression analysis.

• Bulletin of the Korean Space Science Society
• /
• 2004.10b
• /
• pp.360-363
• /
• 2004

This review is concerned with the MP (multipactor) phenomena of the diplexer for RFDU DM of next generation satellite. The MP discharge is serious problems to design RF components in space applications such ase damage of physical structure, performance degradation, and mission failure of the satellite. In this work, we employed the 3D finite element method (FEM) to calculate the critical gap points and adopted ESTEC curve, MP susceptibility zone, to analyze the maximum handling RF power in the diplexer. And this work also recommends that one should design the tx filter of the diplexer which is more wider bandwidth upto the points to escape the ears of the group delay especially the cavity type of RF components in space applications.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2009.10a
• /
• pp.101-103
• /
• 2009

Minimizing the residual impurity level on the MgO layer is the key factor for reducing temporal dark image sticking on bright screen. In this paper, to reduce the residual impurity level on the MgO layer of 50-in. full-HD ac-PDP with He (35%) - Xe (11%) contents, RF-plasma treatments on the MgO layer are adopted under various gases for plasma treatment. As a result of monitoring the difference in the display luminance between the before and after 5-min. sustain discharge with a square-type image at peak luminance, the Ar and Ar>$O_2$ plasma treatments can reduce the temporal dark image sticking on the bright screen in an ac-PDP.