• ETRI Journal
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• 제25권3호
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• pp.195-202
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• 2003

This paper proposes a new LDMOSFET structure with a trenched sinker for high-power RF amplifiers. Using a low-temperature, deep-trench technology, we succeeded in drastically shrinking the sinker area to one-third the size of the conventional diffusion-type structure. The RF performance of the proposed device with a channel width of 5 mm showed a small signal gain of 16.5 dB and a maximum peak power of 32 dBm with a power-added efficiency of 25% at 2 GHz. Furthermore, the trench sinker, which was applied to the guard ring to suppress coupling between inductors, showed an excellent blocking performance below -40 dB at a frequency of up to 20 GHz. These results confirm that the proposed trenched sinker should be an effective technology both as a compact sinker for RF power devices and as a guard ring against coupling.

• 산업기술연구
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• 제29권B호
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• pp.145-149
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• 2009

A RF-DC converter is one of the most important components for a wireless power transmission. It has been developed for many applications such as space solar power system, and Radio Frequency Identification(RFID). In this paper, we designed three types of RF-DC converter and compare the performance of each. All types RF-DC convertoer have a maximum conversion efficiency at input power level of 0 dBm~5 dBm and RF-DC converter of third type was the best performance that has a 21.9% of conversion efficiency.

• Geomechanics and Engineering
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• 제31권1호
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• pp.113-127
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• 2022

The undrained shear strength of soil is considered one of the engineering parameters of utmost significance in geotechnical design methods. In-situ experiments like cone penetration tests (CPT) have been used in the last several years to estimate the undrained shear strength depending on the characteristics of the soil. Nevertheless, the majority of these techniques rely on correlation presumptions, which may lead to uneven accuracy. This research's general aim is to extend a new united soft computing model, which is a combination of random forest (RF) with grasshopper optimization algorithm (GOA) to the pile set-up parameters' better approximation from CPT, based on two different types of data as inputs. Data type 1 contains pile parameters, and data type 2 consists of soil properties. The contribution of this article is that hybrid GOA - RF for the first time, was suggested to forecast the pile set-up parameter from CPT. In order to do this, CPT data and related bore log data were gathered from 70 various locations across Louisiana. With an R² greater than 0.9098, which denotes the permissible relationship between measured and anticipated values, the results demonstrated that both models perform well in forecasting the set-up parameter. It is comprehensible that, in the training and testing step, the model with data type 2 has finer capability than the model using data type 1, with R² and RMSE are 0.9272 and 0.0305 for the training step and 0.9182 and 0.0415 for the testing step. All in all, the models' results depict that the A parameter could be forecasted with adequate precision from the CPT data with the usage of hybrid GOA - RF models. However, the RF model with soil features as input parameters results in a finer commentary of pile set-up parameters.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.47-47
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• 2008

P-type transparent semiconductor $SrCu_2O_2$ thin films have been prepared by RF sputtering using low-alkali glass for LCD and quartz as substrates. Single phase of $SrCu_2O_2$ powder was obtained by heating a stoichiometric mixture of CuO and $SrCO_3$ at 1223K for 96h under N2 gas flow, and target was fabricated at 1243K for 24h. Room temperature conductivity of the sintered body was about 0.02S/cm, and the activation energy in the temperature range of $-50^{\circ}C$~RT and RT~$150^{\circ}C$ were 0.18eV, 0.07eV, respectively. Effects of deposition pressure and post-annealing temperature on the electrical and optical properties of the obtained thin film have been investigated.

• 한국전자파학회논문지
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• 제15권9호
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• pp.872-879
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• 2004

본 논문에서는 LTCC(Low Temperature Co-fired Ceramic) 공정을 이용한 K/Ka 대역(20～21 GHz/30～31 GHz) 위성통신 송수신 겸용 L형태의 광대역 원형편파 안테나를 제안하였다. 이 안테나는 상대 유전율이 5.2인 LTCC 공정을 이용하여 제작되었으며 적층형 구조로서 다른 RF 회로와 집적화가 가능하다. 또한 LTCC을 이용하였으므로 가벼우면서 다른 RF 회로와의 집적화를 통해 손실을 줄일 수 있고, 전체적으로 시스템 크기를 줄일 수 있다. 본 논문에서 사용한 안테나는 모노폴 안테나의 구부러진 L형태의 간단한 구조로서 LTCC 공정상에서의 구현을 쉽게 하고 손실을 최소화할 수 있도록 하였다.

• Journal of Advanced Marine Engineering and Technology
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• 제38권3호
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• pp.302-311
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• 2014

본 연구에서는 소형화된 투명 플렉시블 무선통신소자 구현을 위해, 주기적 구조를 가지는 fishbone 형태의 전송선로를 PES (polyether sulfone) 박막상에 제작하였으며, 이에 관한 RF 특성을 고찰하였다. 그 결과에 의하면, PES 박막상에 제작된 fishbone 형태의 전송선로는 종래의 코프레너선로에 비해 단파장특성을 보여주었으며, 구체적으로 50 GHz에서 선로파장은 2.23 mm으로, 종래의 코프레너 선로의 56.6%이다. 삽입손실 측정결과에 의하면 fishbone 형태의 전송선로는 50 GHz 까지의 주파수 범위에서 1.31 dB보다 낮은 저손실특성을 보여주었다. 대역폭 추출결과에 의하면, PES 박막상의 fishbone 형태의 전송선로는 통과대역이 608 GHz인 광대역 특성을 보였다. PES 박막상의 fishbone 형태의 전송선로의 특성임피던스는 기존의 주기적 구조와는 달리 매우 적은 주파수 의존성을 나타내었으며, 이로 인해 광대역의 전송선로 및 광대역 분포형 수동소자에 이용될 수 있음을 알 수 있었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.48-48
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• 2007

P-type transparent conducting $CuGaO_2$ thin films have been prepared by DC/RF sputtering using Quartz(0001) and sapphire(0001) substrates. The target was fabricated by heating a stoichiometric mixture of CuO and $Ga_2O_3$ at 1373K for 12h under $N_2$ atmosphere. The film were deposited under mixture gas of Ar and $O_2(Ar:O_2=4:1)$ during 10~30min. and the as-deposited films were annealed at 1123K and $N_2$ atmosphere. Room temperature conductivity and the activation energy of the sintered body in the temperature range of 223K ~ 423K were 0 004S/cm, 1.9eV, respectively. XRD revealed that all of the as-deposited films were amorphous. Heating of the films deposited on Quartz substrates above 1123K resulted in crystallization with a second phase of $CuSiO_3$, which was assumed owing to reaction with Quartz substrate. The single phase of $CuGaO_2$ was obtained at the film deposited on the sapphire substrates. The transmittance after annealing of DC- and RF-sputtered films were 55~75% at 550nm. From the transmittance and reflectance measurement. the direct band gap of the DC/RF-sputtered films were 3.63eV and 3.57eV. and there was little difference between DC and RF sputtered films.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.68-69
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• 2007

We have prepared p-type ZnO:Al films in pure oxygen ambient on n-type Si (100) and homo buffer layers by RF magnetron sputtering system. Hall effect measurement shows that the film annealed at $600^{\circ}C$ possesses p-type conductivity and the film annealed $800^{\circ}C$ does not. PL spectra show different properties of p- and n-type ZnO film. The corresponding peaks of PL spectra of p- and n-type show at about same positions. The intensities of high photon energy of n-type film on buffer shows decreasing tendency.

• 반도체디스플레이기술학회지
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• 제9권1호
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• pp.29-33
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• 2010

Recently, the growth of ZnO thin film on glass substrate has been investigated extensively for transparent thin film transistor. We have studied the phase transition of ZnO thin films from metal to semiconductor by changing RF power in the deposition process by RF magnetron sputtering system. The structural, electric, and optical properties of the ZnO thin films were investigated. The film deposited with 75 watt of RF power showed n-type semiconductor characteristic having suitable resistivity $-3.56\;{\times}\;10^{+1}\;{\Omega}cm$, carrier concentration $-2.8\;{\times}\;10^{17}\;cm^{-3}$, and mobility $-0.613\;cm^2V^{-1}s^{-1}$ while other films by 25, 50, 100 watt of RF power closed to metallic films. From the surface analysis (AFM), the number of crystal grain of ZnO thin film increased as RF power increased. The transmittance of the film was over 88% in the visible region regardless of the change in RF power.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2005년도 추계종합학술대회
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• pp.785-788
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• 2005

In this study, micro-scale, high-performance, solenoid-type RF chip inductors were investigated. The size of the RF chip inductors fabricated in this work was $1.0{\times}0.5{\times}0.5mm^3$ The material and shape of the core were 96% $Al_2O_3$ and I-type. The material and number of turn of coil were copper (Cu) and 6. The diameter ($40{\mu}m$) of coil and length (0.35mm) of solenoid were determined by a Maxwell three-dimensional field simulator to maximize the performance of the inductors. High frequency characteristics of the inductance (L) and quality-factor (Q) of developed inductors were measured using an RF Impedance/Material Analyzer (HP4291B with HP16193A test fixture). The inductors developed have inductances of 10.8nH and quality factors of 25.2 at 250MHz, and show results comparable to those measured for the inductors prepared by CoilCraftTm that is one of the best chip inductor company in the world. The simulated data predicted the high-frequency data of the Land Q of the inductors developed well.