• Journal of Electrical Engineering and Technology
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• v.9 no.5
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• pp.1654-1659
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• 2014

Tunneling field-effect transistors (TFETs) are very applicable to low standby-power application by their virtues of low off-current ($I_{off}$) and small subthreshold swing (S). However, low on-current ($I_{on}$) of silicon-based TFETs has been pointed out as a drawback. To improve $I_{on}$ of TFET, a gate-all-around (GAA) TFET based on III-V compound semiconductor with InAs/InGaAs/InP multiple-heterojunction structure is proposed and investigated. Its performances have been evaluated with the gallium (Ga) composition (x) for $In_{1-x}Ga_xAs$ in the channel region. According to the simulation results for $I_{on}$, $I_{off}$, S, and on/off current ratio ($I_{on}/I_{off}$), the device adopting $In_{0.53}Ga_{0.47}As$ channel showed the optimum direct-current (DC) performance, as a result of controlling the Ga fraction. By introducing an n-type InGaAs thin layer near the source end, improved DC characteristics and radio-frequency (RF) performances were obtained due to boosted band-to-band (BTB) tunneling efficiency.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.22 no.6
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• pp.141-147
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• 2008

This paper describes the design of frequency down converting Mixer in the receiver to use compound semiconductor and CMOS product process. The basic theory and structure of frequency down converting Mixer is surveyed, and we design mixer circuit with active balun which use the compound semiconductor and CMOS process. This mixer convert a single ended signal to differential signal at input port of RF and LO instead of matching circuit to get dual band balanced mixer structure and characteristic broadband. This designed mixer has a conversion gain $-1{\sim}-6[dB]$ at $2{\sim}6[GHz]$ bandwidths. However, the simulation of the designed mixer with active balun has the result of a 7[dB] conversion gain for -2[dBm] LO input power and -10[dBm] input P1[dB] at 5.8[GHz].

• Proceedings of the Korea Information Processing Society Conference
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• 2002.04b
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• pp.1563-1566
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• 2002

The increase of vehicles stagnations leads to the increasing attention to the way customers pay and a large number of projects on electronic cash system. Tranport system is comprised of a number of advanced technologies, including information processing, communications, control, and electronics. Recently many research on a system which provides contact in order to protect driver is vehicle passage have been carried out. And some potential problems from that system are being reviewed by electronic cash system. In this papers, we suggest RF protocol developing technology using the concept of electronic cash. ATM electronic cash developing is consist of component of pre-developed coin throw, integration of component using its, and production of more requirement-satisfactory ITS solution. Result increase $15{\sim}40%$ pre-type vehicles stagnations. Especially, we expect this proposed concept would be well adapted to our national environments.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.167-171
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• 2003

We report the material and electrical properties of $CoSi_2$ and $NiSi_2$contacts to n-type 4H-SiC depending on the post-annealing and the metal covering conditions. The Ni and Co silicides are deposited by RF sputtering with Ni/Si/Ni and Co/Si/Co films separately deposited on 4H-SiC substrates. The deposited films are annealed at $800\;^{\circ}C$ in $Ar:H_2$ (9:1) gas ambient. Results of the specific surface resistivity measurements show that the resistivity of the Co-based metal contact was the one order lower than that of the Ni-based contact. The specific contact resistance was measured by a transmission line technique, and the specific contact resistivity of $1.5{\times}10^{-6}\;{\Omega}\;cm^2$ is obtained for Co/Si/Co metal structures after a two-step annealing; at $550\;^{\circ}C$ for 10 min and $800\;^{\circ}C$ for 3min. The physical properties of the contacts were examined by using XRD and AES, and the results indicate that the Co-based metal contacts have better structural stability of silicide phases formed after the high temperature annealing.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.67-67
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• 2000

CeO2는 cubic 구조의 일종인 CaR2 구조를 가지고 있으며 격자상수가 Si의 격장상수와 매우 비슷하여 Si 기판위에 에피텍셜하게 성장할 수 있는 가능성이 매우 크다. 따라서 SOI(silicon-on-insulator)구조의 실현을 위하여 Si 기판위에 CeO2 박막을 에피텍셜하게 성장시키려는 많은 노력이 있어왔다. 또한 metal-ferroelectric-semiconductor field effect transistor)에서 ferroelectric 박막과 Si 기판사이의 완충층으로 사용된다. 이러한 CeO2의 응용을 위해서는 Si 기판 위에 성장된 CeO2 박막의 방위성 및 CeO2/Si 구조의 전기적 특성을 알아보는 것이 매우 중요하다. 본 연구에서는 Si(100) 기판위에 CeO2(200)방향으로 성장하는 박막과 EcO2(111) 방향으로 성장하는 박막을 rf magnetron sputtering 방법으로 증착하여 각각의 구조적, 전기적 특성을 분석하였다. RCA 방법으로 세정한 P-type Si(100)기판위에 Ce target과 O2를 사용하여 CeO2(200) 및 CeO2(111)박막을 증착하였다. 증착후 RTA(rapid thermal annealing)방법으로 95$0^{\circ}C$, O2 분위기에서 5분간 열처리를 하였다 이렇게 제작된 CeO2 박막의 구조적 특성을 XRD(x-ray diffraction)방법으로 분석하였고, Al/CeO2/Si의 MIS(metal-insulator-semiconductor)구조를 제작하여 C-V (capacitance-voltage), I-V (current-voltage) 특성을 분석하였으며 TEM(transmission electron microscopy)으로 증착된 CeO2막과 Si 기판과의 계면 특성을 연구하였다. C-V특성에 있어서 CeO2(111)/Si은 CeO2(111)의 두께가 증가함에 따라 hysteresis windows가 증가한 방면 CeO2(200)/Si은 hysteresis windows가 아주 작을뿐만 아니라 CeO2(200)의 두께가 증가하더라도 hysteresis windos가 증가하지 않았다. CeO2(111)/Si과 CeO2(200)/Si의 C-V 특성의 차이는 CeO2(111)과 CeO2(200)이 Si 기판에 의해 받은 stress의 차이와 이에 따른 defect형성의 차이에 의한 것으로 사료된다.

• Radiation Oncology Journal
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• v.9 no.2
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• pp.171-176
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• 1991

To evaluate the temperature distribution according to the size of the electorde and the thickness of the phantom using 8MHz radiofrequency capacitive heating device, various sized electrodes and phantoms were used in combination. The radii of the electrodes are 10, 15, 20, 25, and 30 cm and the thickness of cylindrical phantoms with diameter 30 cm were 10, 15, 20, 25, 30, and 35 cm. When the thickness of the phantom was 25 cm or 30 cm, homogenous heating was achieved by using the electrode which diameter was equal to or greater than the thickness of the phantom. When the thickness of the phantom was 20 cm or less. homogenous heating was not achieved by using the electrode which diameter was equal to the thickness of the phantom, but achieved by the larger diameter of the electorode. When the sizes of paired electrodes were not equal, the smaller electrode side was preferentially heated.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.145-145
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• 2010

In this paper, we report that the effects of hydrogen doping on the electrical and optical properties of typical transparent conducting oxide films such as ZnO and $SnO_2$ prepared by magnetron sputtering. Recently, density functional theory (DFT) calculations have shown strong evidence that hydrogen acts as a source of n-type conductivity in ZnO. In this work, the beneficial effect of hydrogen incorporation on Ga-doped ZnO thin films was demonstrated. It was found that hydrogen doping results a noticeable improvement of the conductivity mainly due to the increases in carrier concentration. Extent of the improvement was found to be quite dependent on the deposition temperature. A low resistivity of $4.0{\times}10^{-4}\;{\Omega}{\cdot}cm$ was obtained for the film grown at $160^{\circ}C$ with $H_2$ 10% in sputtering gas. However, the beneficial effect of hydrogen doping was not observed for the films deposited at $270^{\circ}C$. Variations of the electrical transport properties upon vacuum annealing showed that the difference is attributed to the thermal stability of interstitial hydrogen atoms in the films. Theoretical calculations also suggested that hydrogen forms a shallow-donor state in $SnO_2$, even though no experimental determination has yet been performed. We prepared undoped $SnO_2$ thin films by RF magnetron sputtering under various hydrogen contents in sputtering ambient and then exposed them to H-plasma. Our results clearly showed that the hydrogen incorporation in $SnO_2$ leads to the increase in carrier concentration. Our experimental observation supports the fact that hydrogen acting as a shallow donor seems to be a general feature of the TCOs.

• Journal of Korean Society of Water and Wastewater
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• v.33 no.2
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• pp.111-119
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• 2019

Electro-coagulation process has been gained an attention recently because it could overcome the membrane fouling problems in MBR(Membrane bio-reactor). Effect of the key operational parameters in electro-coagulation, current density(${\rho}_i$) and contact time(t) on membrane fouling reduction was investigated in this study. A kinetic model for ${\rho}_i$ and t required to reduce the membrane fouling was suggested under different MLSS(mixed liquor suspended solids) concentration. Total 48 batch type experiments of electro-coagulations under different sets of current densities(2.5, 6, 12 and $24A/m^2$), contact times(0, 2, 6 and 12 hr) and MLSS concentration(4500, 6500 and 8500mg/L) were carried out. After each electro-coagulation under different conditions, a series of membrane filtration was performed to get information on how much of membrane fouling was reduced. The membrane fouling decreased as the ${\rho}_i$ and t increased but as MLSS decreased. Total fouling resistances, Rt (=Rc+Rf) were calculated and compared to those of the controls (Ro), which were obtained from the experiments without electro-coagulation. A kinetic approach for the fouling reduction rate (Rt/Ro) was carried out and three equations under different MLSS concentration were suggested: i) ${\rho}_i^{0.39}t=3.5$ (MLSS=4500 mg/L), ii) ${\rho}_i^{0.46}t=7.0$ (MLSS=6500 mg/L), iii) ${\rho}_i^{0.74}t=10.5$ (MLSS=8500 mg/L). These equations state that the product of ${\rho}_i$ and t needed to reduce the fouling in certain amounts (in this study, 10% of fouling reduction) is always constant.

• Journal of the Semiconductor & Display Technology
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• v.21 no.4
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• pp.138-143
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• 2022

We analyzed the influence of post-annealing on Ga₂O₃/n-type 4H-SiC heterojunction diode. Gallium oxide (Ga₂O₃) thin films were deposited by radio frequency (RF) sputtering. Post-deposition annealing at 950℃ in an Oxygen atmosphere was performed. The material properties of Ga₂O₃ and the electrical properties of the diodes were investigated. Atomic Force Microscopy (AFM), X-Ray Diffraction and Scanning Electron Microscope (SEM) images show a significant increase in the roughness and crystallinity of the O₂-annealed films. After Oxygen annealing X-ray Photoelectron Spectroscopy (XPS) shows that the atomic ratio of oxygen increases which is related to a decrease in oxygen vacancy within the Ga₂O₃ film. The O₂-annealed diodes exhibited higher on-current and lower leakage current. Moreover, the ideality factor, barrier height, and thermal activation energy were derived from the current-voltage curve by increasing the temperature from 298 - 434K.

• KSII Transactions on Internet and Information Systems (TIIS)
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• v.15 no.11
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• pp.3950-3969
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• 2021

Radio Frequency (RF)-based indoor localization technologies play significant roles in various Internet of Things (IoT) services (e.g., location-based service). Most such technologies require that all the devices comply with a specified technology (e.g., WiFi, ZigBee, and Bluetooth). However, this requirement limits its application scenarios in today's IoT context where multiple devices complied with different standards coexist in a shared environment. To bridge the gap, in this paper, we propose a cross-technology localization approach, which is able to localize target nodes using a different type of devices. Specifically, the proposed framework reuses the existing WiFi infrastructure without introducing additional cost to localize Non-WiFi device (i.e., ZigBee). The key idea is to leverage the interference between devices that share the same operating frequency (e.g., 2.4GHz). Such interference exhibits unique patterns that depend on the target device's location, thus it can be leveraged for cross-technology localization. The proposed framework uses Principal Components Analysis (PCA) to extract salient features of the received WiFi signals, and leverages Dynamic Time Warping (DTW), Gradient Boosting Regression Tree (GBRT) to improve the robustness of our system. We conduct experiments in real scenario and investigate the impact of different factors. Experimental results show that the average localization accuracy of our prototype can reach 1.54m, which demonstrates a promising direction of building cross-technology technologies to fulfill the needs of modern IoT context.