• 한국표면공학회지
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• 제34권5호
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• pp.510-515
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• 2001

It was first time that low frequency R.F. derived plasma enhanced MOCVD with frimethylborate precursor was used to fabricate a new ternary compound $BO_{x}$ $N_{y}$ . The formation of BON molecule was resulted from nitrogen nitrifying B-O, and forming the angular molecule structure proved by XPS and FT-IR results. The relationship between hardness and film thickness was studied. An thickness-independent hardness was fond about 10 GPa. The empirical calculation of band-gap and UV test result showed that our deposited $BO_{x}$ $N_{y}$ thin film was semiconductor material with 3.4eV of wide band gap. The electrical conductivity, $4.8$\times$10^{-2}$ /($\Omega$.cm)$^{-1}$ also confirmed that $BO_{x}$ $N_{y}$ has a semiconductor property. The roughness detected from the as-grown films showed that there was no serious bombarding effect due to anion in the plasma occurring in the RF frequency derived plasma.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제55권4호
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• pp.204-208
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• 2006

In this study, we investigated the ion energy distributions in a chlorine based inductively coupled plasma by quadrupole mass spectrometer with an electrostatic ion energy analyzer. Ion energy distributions are presented for various plasma parameters such as $BCl_3/Ar$ gas mixing ratio, RF power, and process pressure. As the $BCl_3/Ar$ gas mixing ratio and process pressure decreases, and RF power increases, the saddle-shaped structures is enhanced. The reason is that there are ionized energy difference between $BCl_3$ and Ar, change of plasma potential, alteration of mean free path. and variety of ion collision in the sheath.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2013년도 전력전자학술대회 논문집
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• pp.508-509
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• 2013

본 논문에서는 400kHz 10kW RF Source와 최대전력전달을 하기 위해 가변임피던스 정합기를 이용하여 파워 소스를 준비하였고, 송수신코일은 EE71형태의 페라이트코어에 테프론 와이어를 결선하여 구성하였다. 본 연구에서는 MF대역의 주파수를 이용하므로 자기유도방식을 채택하였다. 무선전력전송에서는 최대로 전력이 전달하기 위하여 송수신 코일과 부하간에 임피던스 매칭이 필수적으로 필요하다. 매칭이 원할하지 않을 경우 RF Source에 반사전력이 반사되어 심각한 손상을 발생할 수 있으며, 수신부 코일의 부하단에 최대로 전력이 전달되지 않을 뿐만 아니라 전체 시스템 효율이 나빠지게 된다 본 연구에서는 임피던스 정합기를 이용하여 자기유도방식에서 최적의 송수신 전송 조건을 도출하였다.

• 한국표면공학회지
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• 제43권2호
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• pp.91-96
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• 2010

SCM440 steels were nitrided using pulsed dc plasma combined with inductively coupled plasma (ICP) generated by 13.56 MHz rf power in order to enhance case hardening depth. The case hardening depth was increased with rf power. The effective case-depth with ICP at 900 watt was as 1.6 times as that nitrided without ICP. The hardening depth was also increased up to 1.45 times. The compound layers formed on top surface were dense and thin when pulsed dc plasma was combined with ICP.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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• pp.1123-1126
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• 2003

In this paper, the emission properties of electrodeless fluorescent lamp were discussed using the inductively coupled plasma. To transmit the electromagnetic energy into the chamber, a RF power of 13.56MHz was applied to the antenna and considering the Ar gas pressure and the RF electric power change, the emission spectrum, Ar- I line, luminance were investigated. At this time the input parameter for ICP RF plama, Ar gas pressure and RF power were applied in the range of $10{\sim}60m$ Torr, $10{\sim}300W$ respectively.

• 한국표면공학회지
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• 제36권1호
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• pp.74-78
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• 2003

The corrosion failure of electronic devices has been a major reliability concern lately. This failure is an ongoing concern because of miniaturization of integrated circuits (IC) and the increased use of polymers in electronic packaging. Recently, plasma-polymerized cyclohexane films were considered as a possible candidate for a interlayer dielectric for multilever metallization of ultra large scale integrated (ULSI) semiconductor devices. In this paper the protective ability of above films as a function of deposition temperature and RF power in an 3.5 wt.% NaCl solution were examined by polarization measurement. The film was characterized by FTIR spectroscopy and contact angle measurement. The protective efficiency of the film increased with increasing deposition temperature and RF power, which induced the higher degree of cross-linking and hydrophobicity of the films.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2003년도 제24회 학술발표회 초록집
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• pp.67-67
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• 2003

• 조명전기설비학회논문지
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• 제18권5호
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• pp.35-41
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• 2004

본 연구에서 사용된 방전 기체는 오염물의 제거 및 박막 표면 정제 등의 연구 분야에 응용되고 있는 질소 가스를 사용하였으며, 1차원 동심구 모델의 개발로 인하여, 접지 면적을 넓게 함에 따라 경방향으로의 플라즈마 분포가 중심축의 분포와 동일하다는 1차원적 가정이 적절하지 못하다는 Barnes 모델을 보완할 수 있었다. 일정한 인가 전압하에서는 입체각($\omega$)의 증가에 따라 질소 플라즈마를 구성하는 각 입자의 수밀도 분포, 전계 및 포텐셜이 감소함을 볼 수 있었다. 그러나 면적비가 증가하면서 구동 전극에서의 각 입자들의 움직임은 상대적으로 높은 전계로부터 더욱 활발하게 형성됨에 따라 직렬 연결된 블로킹 콘덴서에서 발생하는 자기 바이어스 전압은 증가하는 것을 알 수 있었다.

• Korean Chemical Engineering Research
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• 제49권3호
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• pp.357-360
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• 2011

플라즈마 원자층증착 방법을 이용하여 질소를 도핑한 산화아연 나노박막을 Si(111) 기판에 제조하였다. $Zn(C_{2}H_{5})_{2}$, $O_{2}$ 및 $N_{2}$을 사용하여 rf 파워 세기를 50-300 W로 변화시키면서 N-doped ZnO 박막을 제조하였다. 박막의 구조적 광학적 전기적 특성을 각각 XRD, PL, Hall 효과를 측정하여 분석하였다. 플라즈마 rf 파워가 증가함에 따라 ZnO 나노 박막 내의 질소(N) 함유 농도가 높아지고, p형 ZnO의 특성을 보였다.

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1999년도 PROCEEDINGS OF 99 INTERNATIONAL CONFERENCE OF THE KACG AND 6TH KOREA·JAPAN EMG SYMPOSIUM (ELECTRONIC MATERIALS GROWTH SYMPOSIUM), HANYANG UNIVERSITY, SEOUL, 06월 09일 JUNE 1999
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• pp.285-303
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• 1999

Thin films of hydrogenated amorphous silicon carbide compounds (a-SixC1x:H) of different compositions were deposited on Si substrate by RF plasma-enhanced chemical vapor deposition (PECVD). Experiments were carried out using silane(SiH4) and methane(CH4) as the gas precursors at 1 Torr and at low substrate temperature (25$0^{\circ}C$). The gas flow rate was changed with every other parameters (pressure, temperature, RF power) fixed. The substrate was Si(100) wafer and all of the films obtained were amorphous. The bonding structure of a-SixC1x:H films deposited was investigated by X-ray photoelectron spectroscopy (XPS) for the film compositions. In addition, the surface morphology of films was investigated by atomic force microscopy (AFM).