• The Korean Journal of Ceramics
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• v.2 no.4
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• pp.231-237
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• 1996

Mullite ceramics can be sintered by rf plasma sintering to densities as high as 97% compared to the theoretical density of the mullite, while SiC whisker-reinforced mullite matrix ceramic composites were not sintered by plasma sintering. Decomposition of mullite occurs in a superficial regins at the outside surface of the specimen by volatilization of SiO at elevated temperature by plasma. SiC whiskers were destroyed, and the matrix was converted to alumina from SiC-whisker reinforced mullite matrix ceramic composites during the plasma sintering. Accelerated volatilization from the SiC whisker in the mullite prevents sintering. The volatile species are mainly SiC and CO gas species. The effects of plasma on mullite and SiC-whisker reinforced mullite matrix composites are interpreted by thermodynamic simulation of the volatile species in the plasma environment. The thermodynamic results show that the decomposition will not occur during hot pressing.

• Proceedings of the KIPE Conference
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• 2002.07a
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• pp.245-248
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• 2002

In this paper, the development of the RF power supply for Remote Plasma System is discussed. 7kW, 400kHz Remote Plasma Generator is designed and tested. The main power stage is used for the HB PWM inverter with an LC filter in the secondary circuit. The operation characteristics of Remote Plasma Generator are verified by simulation and experimental results.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.320-320
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• 2013

Film thickness monitoring with plasma impedance monitoring (PIM) is demonstrated for small area $SiO_2$ RF plasma etching processes in this work. The chamber conditions were monitored by the impedance signal variation from the I-V monitoring system. Moreover, modified principal component analysis (mPCA) was applied to estimate the $SiO_2$ film thickness. For verification, the PIM was compared with optical emission spectroscopy (OES) signals which are widely used in the semiconductor industry. The results indicated that film thickness can be estimated by 1st principal component (PC) and 2nd PC. Film thickness monitoring of small area $SiO_2$ etching was successfully demonstrated with RF plasma harmonic impedance monitoring and mPCA. We believe that this technique can be potentially applied to plasma etching processes as a sensitive process monitoring tool.

• Journal of the Korean institute of surface engineering
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• v.31 no.3
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• pp.165-170
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• 1998

Deposition of diamond on silicon substrates has been performed by RF HPCVD (Helicon Plasma Chemical Vapor Deposition) from methane-hydrogen gas mixture. Growth properties and deposition condition conditions have been studies as functions of substrate temperature ($750^{\circ}C$~$850^{\circ}C$). Si p-type (100) wafers were used as a substrate. The chharecterizations of the gaind thin films by SEM, AFM and Raman seattring are diamond crystallites which include disordered graphit.

• Applied Science and Convergence Technology
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• v.26 no.4
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• pp.74-78
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• 2017

The discharge characteristics of the radio frequency (RF) surface dielectric barrier discharge have been simulated for the investigation of the ratio of the ion transit time to the RF period. From one-dimensional particle-in-cell (PIC) simulation for a planar dielectric barrier discharge (DBD), it was observed that the high-frequency driving voltage confines the ions in the plasma because of a shorter RF period than the ion transit time. For two-dimensional surface dielectric barrier discharges, a fluid simulation is performed to investigate the characteristics of RF discharges from 1 MHz to 40 MHz. The ratio of the peak density to the average density decreases with the increasing frequency, and the spatiotemporal discharge patterns change abruptly with the change in the ratio of ion transit time to the RF period.

• Transactions on Electrical and Electronic Materials
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• v.2 no.1
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• pp.1-6
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• 2001

$C_{x}F_{y}$ polymer film was deposited in rf and dc Fluorinert vapor ($C_{7}F_{16}$) plasmas. In the plasma phase, the spatial distribution of optical emission spectra and the temporal concentration of decomposed species were monitored, and kinetics of the $C_{7}F_{16}$ decomposition process was discussed. Deposition of $C_{x}F_{y}$ film has been tried on substrates of stainless steel, glass, molybdenum and silicon wafers at room temperature in the vapor pressures of 40 and 100 Pa. The films deposited in the rf plasma showed excellent electrical properties as an insulator for multi-layered interconnection of deep-submicron LSI, i.e. the low dielectric constant ∼2.0, the dielectric strength ∼2 MV/cm and the high deposition rate ∼100nm/min at 100W input power.

• Proceedings of the KIPE Conference
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• 2003.07a
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• pp.260-263
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• 2003

When ICP(Inductive Coupled Plasma type etching and wafer manufacturing is being processed in semiconductor process, a noxious gas in PFC and CFC system is generated. Gas cleaning dry scrubber is to remove this noxious gas. This paper describes a power source device, 2MHz switching frequency class 2kW RF Generator, used as a main power source of the gas cleaning dry scrubber. The power stage of DC/DC converter is consist of full bridge type converter with 100kHz switching frequency Power amplifier is push pull type inverter with 2MHz switching frequency, and transmission line transformer. The adequacy of the circuit type and the reliability of generating plasma in various load conditions are verified through 50$\Omega$ dummy load and chamber experiments result.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.28 no.9
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• pp.45-51
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• 2014

This work carried out for the effective synthesis characteristics of graphene nanowall film by controlling the electric field in a RF plasma CVD process. For that, the bipolar bias voltage was applied to the substrate such as Si and glass materials for the best chemical reaction of positive and negative charges existing in the plasma. For supplying the seed formation sites on substrate and removing the oxidation layer on the substrate surface, the electron bombardment into substrates was performed by a positive few voltage in hydrogen plasma. After that, hydrocarbon film, which is not a graphene nanowall, was deposited on substrates under a negative bias voltage with hydrogen and methane gases. At this step, the film on substrates could not easily identify due to its transparent characteristics. However, the transparent film was easily changed into graphene nanowall by the final hydrogen plasma treatment process. The resultant raman spectra shows the existence of significant large 2D peaks corresponding to the graphene.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.6
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• pp.447-452
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• 1998

The selective dry etching of GaAs to Al\ulcornerGa\ulcornerAs using $BCI_3/SF_6$ gas mixture in electron cyclotron resonance(ECR) plasma is investigated. A selectivity of GaAs to AlGaAs of more than 100 and maximum etch rate of GaAs are obtained at a gas ratio $SF_6/BCI_3+SF_6$ of 25%. We verified the formation of $AlF_3$ on $Al_{0.25}Ga_{0.75}As$from the Auger spectra which enhanced the etch selectivity. In order to investigate surface damage of AlGaAs caused by ECR plasma, we performed a low temperature photoluminescence(PL) measurement as a function of RF power. As the RF power. As the RF power increases, the PL intensity decreases monotonically from 50 to 100 Wand then repidly decreases until 250 W. This behavior is due to surface damage by plasma treatment. This dry etching technique using $BCI_3/SF_6$ gas mixture in ECR plasma is suitable for gate recess formation on the GaAs based pseudomorphic high electron mobility transistor(PHEMT)

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.1147-1150
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• 2003

The RF inductive discharge or inductively coupled plasma (ICP) continues to attract growing attention as an effective plasma source in many industrial applications, the best known of which are plasma processing and lighting technology Although most practical ICPs operate at 13.56 (MHz) and 2.65 (MHz), the trend to reduce the operating frequency is clearly recognizable from recent ICP developments. In an electrodeless fluorescent lamp, the use of a lower operating frequency simplifies and reduces cost of rf matching systems and rf generators and can eliminate capacitive coupling between the inductor coil and plasma, which could be a strong factor in wall erosion and plasma contamination. In this study, the configuration of ferrite and fixture which operates at the frequency of 2.65 (MHz) will be discussed, by using the electromagnetic simulation (Maxwell 2D).