Fabrication of Diamoud Thin Films using RF Plasma

RF 플라즈마를 이용한 다이아몬드 박막의 제조

Deposition of diamond on silicon substrates has been performed by RF HPCVD (Helicon Plasma Chemical Vapor Deposition) from methane-hydrogen gas mixture. Growth properties and deposition condition conditions have been studies as functions of substrate temperature ($750^{\circ}C$~$850^{\circ}C$). Si p-type (100) wafers were used as a substrate. The chharecterizations of the gaind thin films by SEM, AFM and Raman seattring are diamond crystallites which include disordered graphit.