• JSTS:Journal of Semiconductor Technology and Science
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• v.2 no.1
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• pp.49-55
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• 2002

This paper presents high performance MEMS passives using fully CMOS compatible, monolithically integrable 3-D RF MEMS processes for RF and microwave applications. The 3-D RF MEMS technology has been developed and investigated as a viable technological option, which can break the limit of the conventional IC technology. We have demonstrated the versatility of the technology by fabricating various 3-D thick-metal microstructures for RF and microwave applications, such as spiral/solenoid inductors, transformers, and transmission lines, with a vertical dimension of up to $100{\;}\mu\textrm{m}$. To the best of our knowledge, we report that we are the first to construct a fully integrated VCO with MEMS inductors, which has achieved a low phase noise of -124 dBc/Hz at 300 kHz offset from a center frequency of 1 GHz.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.859-862
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• 2003

Well-aligned multiwall carbon nanotubes (MWCNTs) were prepared at low temperature of 400 $^{\circ}C$ by utilizing a radio frequency plasma-enhanced chemical vapor deposition (rf-PECVD) system. The MWCNTs were treated by an external rf plasma source and an ultra-violet laser in order to modify structural defect of carbon nanotube and to ablate possible contamination on carbon nanotube surface. Structural properties of carbon nanotubes were investigated by using a scanning electron microscopy (SEM), Raman spectroscopy, Fourier transformer Infrared spectroscopy (FTIR) and transmission electron microscope (TEM). In addition, the emission properties of the MWNTs were measured for the application of field emission display (FED) in near future. Various post treatments were found to improve the field emission property of carbon nanotubes.

• Journal of Advanced Marine Engineering and Technology
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• v.36 no.1
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• pp.149-156
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• 2012

In this study, we propose a novel transmission line employing inverted PACD (Periodically Arrayed Capacitive Devices) for application to a development of miniaturized passive components on MMIC. The novel microstrip line employing Inverted PACD structure showed a loss much lower than conventional microstrip line. Using the inverted PACD structure, we fabricated a miniaturized impedance transformer on MMIC. the size of the impedance transformer was 0.012 $mm^2$, which is only 1.7% of conventional one. The impedance transformer showed good RF performances in a frequency range of 2.25~6.5 GHz.

• ETRI Journal
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• v.36 no.2
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• pp.317-320
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• 2014

A balanced RF duplexer with low interference in an extremely narrow bandgap is proposed. The Long-Term Evolution band-7 duplexer should be designed to prevent the co-existence problem with the WiFi band, whose fractional bandgap corresponds to only 0.7%. By implementing a hybrid bulk acoustic wave (BAW) structure, the temperature coefficient of frequency (TCF) value of the duplexer is successfully reduced and the suppressed interference for the narrow bandgap is performed. To achieve an RF duplexer with balanced Rx output topology, we also propose a novel balanced BAW Rx topology and RF circuit block. The novel balanced Rx filter is designed with both lattice- and ladder-type configurations to ensure excellent attenuation. The RF circuit block, which is located between the antenna and the Rx filter, is developed to simultaneously function as a balance-tounbalance transformer and a phase shift network. The size of the fabricated duplexer is as small as $2.0mm{\times}1.6mm$. The maximum insertion loss of the duplexer is as low as 2.4 dB in the Tx band, and the minimum attenuation in the WiFi band is as high as 36.8 dB. The TCF value is considerably lowered to $-16.9ppm/^{\circ}C$.

• ETRI Journal
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• v.34 no.6
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• pp.885-891
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• 2012

This paper proposes a high-efficiency power amplifier (PA) with uneven bias. The proposed amplifier consists of a driver amplifier, power stages of the main amplifier with class AB bias, and an auxiliary amplifier with class C bias. Unlike other CMOS PAs, the amplifier adopts a current-mode transformer-based combiner to reduce the output stage loss and size. As a result, the amplifier can improve the efficiency and reduce the quiescent current. The fully integrated CMOS PA is implemented using the commercial Taiwan Semiconductor Manufacturing Company 0.18-${\mu}m$ RF-CMOS process with a supply voltage of 3.3 V. The measured gain, $P_{1dB}$, and efficiency at $P_{1dB}$ are 29 dB, 28.1 dBm, and 37.9%, respectively. When the PA is tested with 54 Mbps of an 802.11g WLAN orthogonal frequency division multiplexing signal, a 25-dB error vector magnitude compliant output power of 22 dBm and a 21.5% efficiency can be obtained.

• JSTS:Journal of Semiconductor Technology and Science
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• v.7 no.2
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• pp.98-101
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• 2007

A fully integrated 5-GHz CMOS power amplifier for IEEE 802.11a WLAN applications is implemented using $0.18-{\mu}m$ CMOS technology. An on-chip transmission-line transformer is used for output matching network and voltage combining. Input balun, inter-stage matching components, output transmission line transformer and RF chokes are fully integrated in the designed amplifier so that no external components are required. The power amplifier occupies a total area of $1.7mm{\times}1.2mm$. At a 3.3-V supply voltage, the amplifier exhibits a 22.6-dBm output 1-dB compression point, 23.8-dBm saturated output power, 25-dB power gain. The measured power added efficiency (PAE) is 20.1 % at max. peak, 18.8% at P1dB. When 54 Mbps/64 QAM OFDM signal is applied, the PA delivers 12dBm of average power at the EVM of -25dB.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.21 no.2
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• pp.121-128
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• 2010

This paper presents a design of a 100 W high-efficiency power amplifier, whose operational frequency band expands from 30 to 512 MHz, using negative feedback network, push-pull structure, broadband RF choke, and transmission line transformer for balun configuration. The push-pull amplifier has been tuned for higher output power using a shunt capacitor as a matching component at its load especially for high-frequency region. The implemented power amplifier exhibited a very flat power gain of $18.34{\pm}0.9\;dB$ throughout the operating frequency band and very high power-added efficiency(PAE) of greater than 40% at an output power of 100 W. It also showed second- and third-harmonic distortion levels of below -34 dBc and -12 dBc, respectively, through the entire operating frequency band.

• Proceedings of the KIPE Conference
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• 2003.07b
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• pp.611-615
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• 2003

In this paper, a operation characteristics and analysis of the HB(half bridge) inverter for remote plasma system are studied. the remote plasma system is cleaning system for the chemical vapor deposition (CVD) chamber in semiconductor processing. The remote plasma system is powered by the RF generator The main power stage of the RF generator is used for the HB PWM inverter with an low pass filter in the secondary circuit of the transformer. The detailed mode analysis of HB invertor was described. The operation characteristics of Remote Plasma Source are verified by simulation and experimental results.

• KIEE International Transactions on Electrophysics and Applications
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• v.5C no.3
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• pp.124-130
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• 2005

In this paper, we designed a cylindrical type light source having an electromagnetic principle of inductively coupled plasma, and measured its electrical-optical properties. Using the transformer principle, an electrically equivalent circuit cylindrical type light source was analyzed. According to the parameters of electromagnetic induction, which were diameter of coil with cpO.3$\~$ 1.2mm, number of turns with 4$\~$ 12 turns, distance with 40$\~$ l20mm and RF power with 10$\~$ 150W, the electrical .md optical properties were measured. When the diameter of the coil was cp0.3mm, number of turns was 8 and distance was 40mm, and the maximum brightness of 29,730 cd/m$^{2}$ was shown with RF power l50W. The relationship between electromagnetic induction and plasma discharges was demonstrated using the mode transition from E-mode to H-mode

• Proceedings of the KIPE Conference
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• 2003.07a
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• pp.260-263
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• 2003

When ICP(Inductive Coupled Plasma type etching and wafer manufacturing is being processed in semiconductor process, a noxious gas in PFC and CFC system is generated. Gas cleaning dry scrubber is to remove this noxious gas. This paper describes a power source device, 2MHz switching frequency class 2kW RF Generator, used as a main power source of the gas cleaning dry scrubber. The power stage of DC/DC converter is consist of full bridge type converter with 100kHz switching frequency Power amplifier is push pull type inverter with 2MHz switching frequency, and transmission line transformer. The adequacy of the circuit type and the reliability of generating plasma in various load conditions are verified through 50$\Omega$ dummy load and chamber experiments result.