JSTS:Journal of Semiconductor Technology and Science

The Institute of Electronics and Information Engineers (대한전자공학회)
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Monolithically Integrable RF MEMS Passives

  • Park, Eun-Chul (Department of Electrical Engineering and Computer Science(Division of Electrical Engineering) Korea Advanced Institute of Science and Technology) ;
  • Park, Yun-Seok (Department of Electrical Engineering and Computer Science(Division of Electrical Engineering) Korea Advanced Institute of Science and Technology) ;
  • Yoon, Jun-Bo (Department of Electrical Engineering and Computer Science(Division of Electrical Engineering) Korea Advanced Institute of Science and Technology) ;
  • Euisik Yoon (Department of Electrical Engineering and Computer Science(Division of Electrical Engineering) Korea Advanced Institute of Science and Technology)
  • Published : 2002.03.01
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Abstract

This paper presents high performance MEMS passives using fully CMOS compatible, monolithically integrable 3-D RF MEMS processes for RF and microwave applications. The 3-D RF MEMS technology has been developed and investigated as a viable technological option, which can break the limit of the conventional IC technology. We have demonstrated the versatility of the technology by fabricating various 3-D thick-metal microstructures for RF and microwave applications, such as spiral/solenoid inductors, transformers, and transmission lines, with a vertical dimension of up to $100{\;}\mu\textrm{m}$. To the best of our knowledge, we report that we are the first to construct a fully integrated VCO with MEMS inductors, which has achieved a low phase noise of -124 dBc/Hz at 300 kHz offset from a center frequency of 1 GHz.

Keywords

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