• 제목/요약/키워드: RF switches

검색결과 65건 처리시간 0.024초

TOC (Transceiver-on-Chip)를 위한 RF MEMS (Micro Electromechanical Systems) 기술

  • 전국진;성우경
    • 한국마이크로전자및패키징학회:학술대회논문집
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    • 한국마이크로전자및패키징학회 2001년도 추계 기술심포지움
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    • pp.55-60
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    • 2001
  • RF MEMS is an exciting emerging technology that has great potential to develop TOC (Transceiver-on-Chip). Applications of the RF MEMS to wireless communications systems are presented. The ability of the RF MEMS technology to enhance the performance and to reduce the size of passive components, in particular, switches, inductors, and tunable capacitors, is addressed. A number of potential wireless system opportunities for the TOC are awaiting the maturation of the RF MEMS technology.

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RF MEMS 스위치를 이용한 주파수 가변 대역 통과 필터 (A Micromachined Tunable Bandpass Filter Using RF MEMS Switch)

  • 김종만;박재형;김정무;이상효;백창욱;권영우;김용권
    • 한국정보통신설비학회:학술대회논문집
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    • 한국정보통신설비학회 2004년도 하계학술대회
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    • pp.11-14
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    • 2004
  • In this paper, a novel tunable bandpass filter using tunable series inductors and MEMS switches for wireless LAN applications was proposed. The proposed tunable filter was fabricated using a micromachining technology and performances of the fabricated filter were estimated. The filter consists of spiral inductors, MIM capacitors and direct-contact type MEMS switches, and its frequency tunability is achieved by changing the inductance that is induced by ON/OFF actuations of the MEMS switches. The actuation voltage of the MEMS switches was 58 V, and the measured center frequencies were 2.55 GHz and 5.1 GHz, respectively. The passband insertion loss and 3-dB bandwidth were 4.2 dB and 22.5 % at 2.55 GHz, and 5.2 dB and 23.5 % at 5.1 GHz, respectively.

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A Single-Pole, Eight-Throw, Radio-Frequency, MicroElectroMechanical Systems Switch for Multi-Band / Multi-Mode Front-End Module

  • Kang, Sung-Chan;Kim, Hyeon-Cheol;Chun, Kuk-Jin
    • 센서학회지
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    • 제20권2호
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    • pp.77-81
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    • 2011
  • This paper presents a single-pole eight-throw(SP8T) switch based on proposed a radio-frequency(RF) microelectromechanical systems (MEMS) switches. The proposed switch was driven by a double stop(DS) comb drive, with a lateral resistive contact. Additionally, the proposed switch was designed to have tapered signal line and bi-directionally actuated. A forward actuation connects between signal lines and contact part, and the output becomes on-state. A reverse actuation connects between ground lines and contact part, and the output becomes off-state. The SP8T switch of 3-stage tree topology was developed based on an arrangement of the proposed RF MEMS switches. The developed SP8T switch had an actuation voltage of 12 V, an insertion loss of 1.3 dB, a return loss of 15.1 dB, and an isolation of 31.4 dB at 6 GHz.

Integrated Micro-Mechanical Switches for RF Applications

  • Park, Jae Y.;Kim, Geun H.;Chung, Ki W .;Jong U. Bu
    • 한국전자파학회논문지
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    • 제11권6호
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    • pp.952-958
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    • 2000
  • 다양한 구조위 트랜스미션 라인과 힌지들을 갖는 고주파용 마이크로머신드 용량성 스위치들이 새롭게 디자인되었고 전기도금 기술, 저온 공정기술, 그리고 건식 식각기술들을 이용하여 제작되었다. 특히, 집적화된 용량성 스위치들이 높은 스위칭 on/off ratio와 on 캐패시턴스를 갖도록 하기 위하여 고유전율을 갖는 SrTiO3라는 상유전체를 절연체로 사용하였다. 제작된 스위치들은 8V의 구동전압, 0.08dB의 삽입손실, 42dB의 높은 isolation, 600의 on/off ratio, 그리고 50pF의 on 캐패시턴스의 특성들을 갖는다.

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Technologies for RF System in Package (SIP)

  • Mathews, Doug
    • 한국마이크로전자및패키징학회:학술대회논문집
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    • 한국마이크로전자및패키징학회 2003년도 International Symposium
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    • pp.19-39
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    • 2003
  • Embedded Laminate Embedded RF Functional Blocks.Base Library of Laminate Embedded Filters and Baluns developed for 2.4GHz Applications -S-Parameters are provided at connection points -Utilizes a low cost 2 core construction.Statistical Variation Study in Report Phase.Measurements over variants show solid performance.Filters and Baluns are available for customer use.Laminate Embedded RF Functions - Various Filters, BALUNs, couplers, etc. for Bluetooth, 802.11, and Cellular.LTCC Embedded RF Functions - Various Filters, BALLNs, Diplexers, Antenna Switches, couplers, etc. for Bluetooth, 802.11, and Cellular.Eulbedded Passives - Various Inductor topologies Performance different than ideal or discrete inductor Must look at inductor performance in overall RF function - Working on embedded ceramic capacitors in laminate . Embedded Shields - Program in place to identify and define key design rules

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RF front-end Module for On-Line UHF Partial-discharge Monitoring System

  • Lee June Young;Kim Bok Ki
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2004년도 학술대회지
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    • pp.776-779
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    • 2004
  • A RF front-end module is designed for GIS(Gas Insulated Substation) which is employed for effective and efficient very high voltage transmission. Major advantage of the unit is improved PO detection sensitivity through minimizing the effect of surrounding interference signals, which is achieved by controlling the gain and the selection of the frequency band, for the precise detection of any UHF PO (Partial Discharge) disturbance occurred in the GIS due to some unwanted problems. For the development of the module, various switches for providing selected signal paths, wideband LNA, 3 BPF for selecting detection frequency band, and video detector are designed, fabricated and measured on 1 mm FR4 substrate with various RF components. The detection sensitivity of the unit was <-60 dBm that is sufficient to detect UHF PO signals as low as 1 pC. It is believed that the value is enough to detect the signal occurred in GIS.

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전자파차폐효과 측정시스템의 구현 (Establishment of the Electromagnetic Shielding Effectiveness Measurement System)

  • 정연춘;강태원;정낙삼
    • 한국전자파학회지:전자파기술
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    • 제4권3호
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    • pp.45-53
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    • 1993
  • 재료의 전자파차폐효과는 일정한 송신전력에 대해 측정치구 내에 차폐재료가 놓여 있을 때와 없을 때에 수신 되는 수신전력의 차를 측정하므로써 결정된다. 구현된 전자파차폐효과 측정시스댐은 다양한 측정치구를 이용하고, 트랙킹신호원, 스펙트럼분석기, 스텝감쇠기, 고주파스위치, 신호증폭기 동을 사용하였으며, 퍼스날컴퓨터에 의해 측정이 자동으로 이루어지도록 설계되었다. 특히 고주파스위치와 쌍방향성결합기를 이용하여 한대의 스펙트럼분석기를 사용하여 입사전력, 반사전력, 투과전력을 측정할 수 있어 재료의 전자파차폐효과 측정은 물론, 차폐 특성에 관한 분석도 가능하여 재료의 설계에도 활용될 수 있다. 구현된 측정시스댐은 10 MHz~1 G GHz의 주파수대역에서 120 dB 이상의 동작영역을 가지며, 각종의 복합재료의 전자파차폐효과를 효과적으로 측정할 수 있다.

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A 0.13-μm CMOS RF Tx/Rx Switch for Wideband Applications

  • Kim, Jeong-Yeon;Kim, Chang-Wan
    • Journal of electromagnetic engineering and science
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    • 제8권3호
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    • pp.96-99
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    • 2008
  • This paper describes a $0.13-{\mu}m$ CMOS RF switch for $3{\sim}5$ GHz UWB band(mode 1). It can improve isolation characteristics between ports by using deep n-well RF devices while their source and body terminals are separated. From the measurement results, the proposed T/R switch is comparative to the on-wafer probing measurement results of the series-shunt T/R switches. When the proposed T/R switch operates as Tx mode, measured insertion loss from Tx to output port is less than 1.5 dB and isolation between Tx and Rx is more than 27 dB for $3{\sim}5$ GHz. Return loss for the Tx port is more than -10 dB and input P1dB is +10 dBm.

A Novel Stiff Membrane Seesaw Type RF Microelectromechanical System DC Contact Switch on Quartz Substrate

  • Khaira, Navjot K.;Singh, Tejinder;Sengar, Jitendra S.
    • Transactions on Electrical and Electronic Materials
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    • 제14권3호
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    • pp.116-120
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    • 2013
  • This paper proposes a novel RF MEMS dc-contact switch with stiff membrane on a quartz substrate. The uniqueness of this work lies in the utilization of a seesaw mechanism to restore the movable part to its rest position. The switching action is done by using separate pull-down and pull-up electrodes, and hence operation of the switch does not rely on the elastic recovery force of the membrane. One of the main problems faced by electrostatically actuated MEMS switches is the high operational voltages, which results from bending of the membrane, due to internal stress gradient. This is resolved by using a stiff and thick membrane. This membrane consists of flexible meanders, for easy movement between the two states. The device operates with an actuation voltage of 6.43 V, an insertion loss of -0.047 dB and isolation of -51.82 dB at 2 GHz.

Multi-Dielectric & Multi-Band operations on RF MEMS

  • Gogna, Rahul;Gaba, Gurjot Singh;Jha, Mayuri;Prakash, Aditya
    • Transactions on Electrical and Electronic Materials
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    • 제17권2호
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    • pp.86-91
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    • 2016
  • Ever increasing demand for microwave operated applications has cultivated need for high-performance universal systems capable of working on multi-bands. This objective can be realized using Multi-Dielectrics in RF MEMS capacitive switch. In this study, we present a detailed analysis of the effect of various dielectrics on switch performance. The design consists of a capacitive switch and performance is analyzed by changing the dielectric layers beneath the switch. The results are obtained using three different dielectrics including Silicon nitride (7.6), Hafnium dioxide (25) and Titanium oxide (50). Testing of proposed switch yields high isolation (- 87.5 dB) and low insertion loss (- 0.1 dB at 50 GHz) which is substantially better than the conventional switches. The operating bandwidth of the proposed switch (DC to 95 GHz) makes it suitable for wide band microwave applications.