• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제52권7호
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• pp.282-287
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• 2003

″H″ type resonator has the advantage for the miniaturization of high-T7 superconducting (HTS) microstrip antenna in comparison with the conventional microstrip antenna such as rectangular type or circular type. In this paper we designed miniaturized HTS antennas using this "H"-type resonator and reported the characteristics of our antennas including return loss, bandwidth, radiation patterns, efficiency and so on. To fabricate the "H" type antenna, HTS YBa$_2$Cu$_3$$O_{7-x}$ (YBCO) thin films were deposited on MgO substrates using rf-magnetron sputtering. For comparison between normal conducting antennas and superconducting antennas, the gold antennas with the same dimension were also fabricated. An aperture coupling was used for impedance matching between 50 $\Omega$ feed line and HTS radiating patch. The ″H" type superconducting antenna showed the performance of 1.38 in SWR, 26 % in efficiency, and 13.8 dB in the return loss superior to the normal conducting counterpart.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제48권5호
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• pp.309-314
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• 1999

The magnetized helical resonator plasma etcher has been built. Electron density and temperature were measured as functions of rf source power, axial magnetic field, and pressure. The results show electron density increases as the magnetic field increases and reached $2\times1012cm^{-3}$,/TEX>. The oxide etch rate and selectivity to polysilicon were investigated as the above mentioned conditions and self-bias voltage. We can obtain the much improved oxide etch selectivity to polysilicon (60 : 1) by applying the external axial weak magnetic field in magnetized helical resonator plasma etcher.

• ETRI Journal
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• 제36권2호
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• pp.317-320
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• 2014

A balanced RF duplexer with low interference in an extremely narrow bandgap is proposed. The Long-Term Evolution band-7 duplexer should be designed to prevent the co-existence problem with the WiFi band, whose fractional bandgap corresponds to only 0.7%. By implementing a hybrid bulk acoustic wave (BAW) structure, the temperature coefficient of frequency (TCF) value of the duplexer is successfully reduced and the suppressed interference for the narrow bandgap is performed. To achieve an RF duplexer with balanced Rx output topology, we also propose a novel balanced BAW Rx topology and RF circuit block. The novel balanced Rx filter is designed with both lattice- and ladder-type configurations to ensure excellent attenuation. The RF circuit block, which is located between the antenna and the Rx filter, is developed to simultaneously function as a balance-tounbalance transformer and a phase shift network. The size of the fabricated duplexer is as small as $2.0mm{\times}1.6mm$. The maximum insertion loss of the duplexer is as low as 2.4 dB in the Tx band, and the minimum attenuation in the WiFi band is as high as 36.8 dB. The TCF value is considerably lowered to $-16.9ppm/^{\circ}C$.

• 한국전기전자재료학회논문지
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• 제15권12호
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• pp.1039-1044
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• 2002

Film Bulk Acoustic Resonator (FBAR) using thin piezoelectric films can be made as monolithic integrated devices with compatibility to semiconductor process, leading to small size, low cost and high Q RF circuit elements with wide applications in communications area. This paper presents an MMIC compatible suspended FBAR using SOI micromachining. It is possible to make a single crystal silicon membrane using a SOI wafer In fabricating active devices, SOI wafer offers advantage which removes the substrate loss. FBAR was made on the 12㎛ silicon membrane. Electrode and Piezoelectric materials were deposited by RF magnetron sputter. The maximum resonance frequency of FBAR was shown at 2.5GHz range. The reflection loss, K$^2$$\_$eff/, Q$\_$serise/ and Q$\_$parallel/ in that frequency were 1.5dB, 2.29%, 220 and 160, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 제5회 영호남 학술대회 논문집
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• pp.94-97
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• 2003

This study uses ZnO thin film as a piezoelectric material and Pt as bottom electrode for FBAR (film bulk acoustic resonator) device. ZnO thin film and Pt were deposited by RF-magnetron sputtering method. ZnO thin film and Pt were oriented to c-axis. Top electrode Al was deposited by thermal evaporation. The membrane was formed of bulk micromachining. The FBAR was evaluated by XRD, SEM and electrical characterization. The resonant frequency was measured by HP 8753C Network Analyzer. A fabricated FBAR device exhibited a resonant frequency of 700 MHz ~ 1.5 GHz. When bottom electrode and top electrode thickness were fixed, the resonant frequency was increased as decreasing ZnO thin film thickness.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제52권12호
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• pp.586-591
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• 2003

We have developed the radio frequency excited slab waveguide $CO_2$ laser, The dimension of active area is $2{\times}40{\times}400$ mm to get a laser gain. Two pieces of concave mirror are used to make the unstable resonator of negative branch. The radio frequency is 123 MHz and RF input power is from 100 to 900 W. The laser gas is set to a pressure of 10 ∼ 60 torr and the mixing ration is $CO_2$:$N_2$:He=1:1:3. The laser output power of 50.9 W was obtained with laser power to RF power efficiency of 6.5 %.

• Journal of Electrical Engineering and information Science
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• 제2권3호
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• pp.95-98
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• 1997

A nonlinear optical-microwave interaction is carried out in an uniplanar CPW-to-Slotline ring resonator on the semi-insulating GaAs substrate, in which a Schottky photodetector is monolithically integrated as a coupling gap. When the capacitive reactance of the detetor is modulated, the parametric amplification effect of the mixer occurs. In this device structure, the parametric amplification gain of 20 dB without the applied bias in RF signal is obtained. This microwave optoelectronic mixer can be used in the fiber-optic communication link.

• Journal of information and communication convergence engineering
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• 제4권3호
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• pp.111-113
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• 2006

A new thin film deposition technique of piezoelectric ZnO film and its successful application for film bulk: acoustic resonator (FBAR) devices are presented. The two-step deposition used seems to be able to deposit ZnO film with a highly preferred orientation. The FBAR devices with the ZnO films show an excellent return loss of $35{\sim}50$ dB at $1.5{\sim}2$ GHz.

• Journal of electromagnetic engineering and science
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• 제12권4호
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• pp.227-233
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• 2012

This paper describes a novel and compact biosensing platform using an RF active system. The proposed sensing system is based on the oscillation frequency deviation due to the biomolecular binding mechanism on a resonator. The impedance variation of the resonator, which is caused by a specific biomolecular interaction results in a corresponding change in the oscillation frequency of the oscillator so that this change is used for the discrimination of the biomolecular binding, along with concentration variation. Also, a Surface Acoustic Wave (SAW) filter is utilized in order to enhance the biosensing performance of our system. Because the oscillator operates at the skirt frequency range of the SAW filter, a small amount of oscillation frequency deviation is transformed into a large variation in the output amplitude. Next, a power detector is used to detect the amplitude variation and convert it to DC voltage. It was also found that the frequency response of the biosensing system changes linearly with three streptavidin concentrations. Therefore, we expect that the proposed RF biosensing system can be applied to bio/medical applications capable of detecting a nano-sized biomolecular interaction.

• 한국광학회지
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• 제14권4호
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• pp.406-412
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• 2003

고주파 여기 방식의 슬랩 도파관 $CO_2$ 레이저를 제작하고 그 특성을 조사하였다. 레이저 이득을 얻기 위한 고주파 방전구간의 크기는 2${\times}$40${\times}$400mm이고, 레이저 공진기는 볼록거울과 오목거울을 사용하여 positive branch형태의 불안정 공진기를 사용하였다. 고주파 여기 주파수는 123 MHz를 사용하였고, 가스의 혼합 비율은 $CO_2$:$N_2$:He를 각각 1:1:3으로 사용하였다. 공진기의 가스 압력이 40 ton,고주파 입력파워 900 W에서 70.8 W의 출력을 얻었으며, 이때 레이저의 효율은 9.2%이다.