• Journal of electromagnetic engineering and science
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• v.14 no.4
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• pp.336-341
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• 2014

Dosimetry of radiating electromagnetic wave from mobile devices to human body has been evaluated by measuring Specific Absorption Rate (SAR). Usual SAR measurement system scans the volume by robot arm to evaluate RF power absorption to human body from wireless devices. It is possible to fast estimate the volume SAR by software deleting robot moving time with the 2D surface SAR data acquired by arrayed probes. This paper shows the principle of fast SAR measurement and the measured data comparison between the fast SAR system and the robot scanning system. Data of the fast SAR is well corresponding with data of robot scanning SAR within ${\pm}3$ dB, and its dynamic range covers from 10 mW/kg to 30 W/kg with 4.8 mm probe diameter.

• Korean Journal of Materials Research
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• v.13 no.3
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• pp.185-190
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• 2003

Titanium dioxide films were prepared by RF sputtering method on glass for various oxygen partial pressures at power 270 W. The crystal structure, photocatalytic property and the hydrophilicity of $TiO_2$thin film the deposition conditions were investigated. Crystallized anatase phase was observed in $TiO_2$film deposited at the ratio of oxygen partial pressure 10% and 20% for 2 hrs. As the increase of deposition time, the grain size and void size of $TiO_2$film have increased and also $V_2$films have been good crystallinity. The ultraviolet-visible light absorption of $TiO_2$films was increased with increasing of deposition time and occured chiefly at the wavelength between 280 and 340 nm. The absorption band was shifted to a longer wave length as deposition time increased. Water contact angle on the X$TiO_2$film of anatase structure was decreased with increasing ultraviolet illumination time and became lower than $11^{\circ}$ from $83^{\circ}$. When hydrophilic $TiO_2$film changed by enough ultraviolet illumination was stored in the dark, the film surface gradually turned to hydrophobic state.

• Journal of the Korean Vacuum Society
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• v.18 no.3
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• pp.164-175
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• 2009

CFD is used to analyze gas flow characteristics, power absorption, electron temperature, electron density and chemical species profile of an internal antenna type inductively coupled plasma system. An optimized grid generation technology is used for a complex real-scale models for industry. A bare metal antenna shows concentrated power absorption around rf a feeding line. Skin depth of power absorption for a system is modeled to 50 mm, which is reported 53 mm by experiments. For an application of bipolar plates for hydrogen fuel cells, multi-sheet loading ICP nitriding system is proposed using an internal ICP antenna. It shows higher atomic nitrogen density than reported simple pulsed dc nitriding systems. Minimum gap between sheets for uniform nitriding is modeled to be 39 mm.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.16 no.8 s.99
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• pp.810-814
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• 2005

Input power for TEM cell apparatus due to SAR(Specific Absorption Rate) for culture blood cell is determined by the transmission and reflection measurement of blood into the TEM cell. Blood cell with skin cell are reference culture cells for the study of EM wave effect. Exposure RF power from exposure apparatus to culture cell should not only exact for SAR value, but also should be based on the theoretical theory. In this paper, insertion loss of 50 g blood was measured to know exposure power per gram for culture blood cell, and input power of TEM cell due to SAR 0.8, 1.6, 3, 4 mW/g using the measured data are delivered. This study is for applying to EM wave exposure apparatus to culture cell.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.57 no.12
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• pp.2249-2254
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• 2008

A non-thermal micron size plasma needle is applicable for medical treatment because it includes radicals, charged particles, ultraviolet emission, and strong electric fields. The electric fields around the plasma needle device driven by a radio frequency wave are investigated in order to calculate the power delivered to the cell. A commercial multi-physics code, CFD-ACE, was utilized for the calculation of electric fields for the optimization of the needle structure. The electric field and energy absorption profiles are presented with the variation of the device structure and the distance between the needle and tissues. The living tissues effectively absorb the radio frequency power from the plasma needle device with the covered pyrex structure.

• Journal of the Semiconductor & Display Technology
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• v.22 no.1
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• pp.118-123
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• 2023

Partially magnetized capacitively coupled plasma (CCP) sources are investigated using a two-dimensional kinetic simulation code named EDIPIC-2D. A converging numerical solution was obtained for CCP with a 60 MHz power source, while properly capturing the dynamics of electrons and power absorption over a single RF period. The effects of magnetic fields with different orientations were evaluated. Axial magnetic fields caused changes in the spatial distribution of plasma density, affecting the loss channel. Transverse magnetic fields enhanced stochastic heating near the powered electrode, leading to an increase in plasma density while the significant E×B drift loss compensated for this rise.

• Korean Journal of Materials Research
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• v.23 no.3
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• pp.155-160
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• 2013

ZnO thin films co-doped with Mg and Ga (MxGyZzO, x + y + z = 1, x = 0.05, y = 0.02 and z = 0.93) were prepared on glass substrates by RF magnetron sputtering with different sputtering powers ranging from 100W to 200W at a substrate temperature of $350^{\circ}C$. The effects of the sputtering power on the structural, morphological, electrical, and optical properties of MGZO thin films were investigated. The X-ray diffraction patterns showed that all the MGZO thin films were grown as a hexagonal wurtzite phase with the preferred orientation on the c-axis without secondary phases such as MgO, $Ga_2O_3$, or $ZnGa_2O_4$. The intensity of the diffraction peak from the (0002) plane of the MGZO thin films was enhanced as the sputtering power increased. The (0002) peak positions of the MGZO thin films was shifted toward, a high diffraction angle as the sputtering power increased. Cross-sectional field emission scanning electron microscopy images of the MGZO thin films showed that all of these films had a columnar structure and their thickness increased with an increase in the sputtering power. MGZO thin film deposited at the sputtering power of 200W showed the best electrical characteristics in terms of the carrier concentration ($4.71{\times}10^{20}cm^{-3}$), charge carrier mobility ($10.2cm^2V^{-1}s^{-1}$) and a minimum resistivity ($1.3{\times}10^{-3}{\Omega}cm$). A UV-visible spectroscopy assessment showed that the MGZO thin films had high transmittance of more than 80 % in the visible region and that the absorption edges of MGZO thin films were very sharp and shifted toward the higher wavelength side, from 270 nm to 340 nm, with an increase in the sputtering power. The band-gap energy of MGZO thin films was widened from 3.74 eV to 3.92 eV with the change in the sputtering power.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.158-158
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• 2011

$Cu(In_xGa_{1-x})Se_2$ (CIGS) thin film solar cell is one of the most promising solar cells in photovoltaic devices. CIGS has a direct band gap which varied from 1.0 to 1.26 eV, depending on the Ga to In ratio. Also, CIGS has been studying for an absorber in thin film solar cells due to their highest absorption coefficient which is $1{\times}10^5cm^{-1}$ and good stability for deposition process at high temperature of $450{\sim}590^{\circ}C$. Currently, the highest efficiency of CIGS thin film solar cell is approximately 20.3%, which is closely approaching to the efficiency of poly-silicon solar cell. The deposition technique is one of the most important points in preparing CIGS thin film solar cells. Among the various deposition techniques, the sputtering is known to be very effective and feasible process for mass production. In this study, CIGS thin films have been prepared by rf magnetron sputtering method using a single target. The optical and structural properties of CIGS films are generally dependent on deposition parameters. Therefore, we will explore the influence of deposition power on the properties of CIGS films and the films will be deposited by rf magnetron sputtering using CIGS single target on Mo coated soda lime glass at $500^{\circ}C$. The thickness of CIGS films will be measured by Tencor-P1 profiler. The optical properties will be measured by UV-visible spectroscopy. The crystal structure will be analyzed using X-ray diffraction (XRD). Finally the optimal deposition conditions for CIGS thin films will be developed.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.16 no.1
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• pp.666-670
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• 2015

This paper presents radiation pattern reconfigurable antenna for Fitbit Flex wristband which detects vital signal. Also, the paper presents Specific Absorption Rate (SAR) from the loop-dipole radiation pattern reconfigurable antenna based on the position of human body. The proposed loop-dipole radiation pattern reconfigurable antenna produces two opposite side direction radiation pattern using two RF switches. The resonant frequency of the radiation pattern reconfigurable antenna is Bluetooth communication bandwidth (2.4 - 2.485 GHz) and the maximum gain of the proposed antenna is 1.96 dBi. The proposed antenna satisfied the standard SAR value of 1.6 W/kg in 1 g tissue of the human body when the Bluetooth communication input average power of 0.04 W is excited to five parts of human body (head, chest, stomach, back, wrist). The maximum SAR value of in this simulation is presented in the part of head.

• Journal of Navigation and Port Research
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• v.27 no.4
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• pp.437-441
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• 2003

In this paper, the 30 W power amplifier for an IMT-2000 repeater was developed a gain flatness and the third IMD (Intermodulation distortion) by microwave absorber. The absorption ability of the absorber is shown up to -10 dB and -4 dB at 3.6 GHz, 2.3 GHz band, respectively. The power amplifier without absorber has the gain over 57 dB, the gain flatness of $\pm$0.33 dB and the third IMD of 27 dBc at 33.3 W output. Otherwise, the power amplifier with absorber has the gain over 58 dB, the gain flatness of less than $\pm$0.9, the third IMD over 29 dBc at the same output power. As a result, the characteristic of the different type shows improvement of 1 dB in gain, 0.3 dB in gain flatness and 1.77 dBc in IMD.