• Proceedings of the IEEK Conference
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• 2003.07b
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• pp.987-990
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• 2003

This paper presents a cross-coupled RF VCO with high-Q MEMS-based spiral inductors. Since the use of high-Q inductors is critical to VCO design, MEMS-based spiral inductors with the Q-factor of nearly 22 are used for the RF VCO with an active cascode current source. The RF VCO circuits including spiral inductors have been designed and simulated in GaAs MMIC-MEMS process. The simulation results of the VCO circuits showed the phase noise of -180dBc/Hz at an offset frequency of 500KHz. The RF VCO circuit simulatinon used 2mA DC current and 3.3V supply.

• ETRI Journal
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• v.42 no.3
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• pp.333-340
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• 2020

We consider a hybrid combiner design for downlink massive multiple-input multiple-output systems when there is residual inter-user interference and each user is equipped with a limited number of radio frequency (RF) chains (less than the number of receive antennas). We propose a hybrid combiner that minimizes the mean-squared error (MSE) between the information symbols and the ones estimated with a constant amplitude constraint on the RF combiner. In the proposed scheme, an iterative alternating optimization method is utilized. At each iteration, one of the analog RF and digital baseband combining matrices is updated to minimize the MSE by fixing the other matrix without considering the constant amplitude constraint. Then, the other matrix is updated by changing the roles of the two matrices. Each element in the RF combining matrix is obtained from the phase component of the solution matrix of the optimization problem for the RF combining matrix. Simulation results show that the proposed scheme performs better than conventional matrix-decomposition schemes.

• Journal of Biomedical Engineering Research
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• v.19 no.2
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• pp.143-152
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• 1998

In this paper, we present the performances of a Doppler system using single channel RF(Radio Frequency) sampling. This technique consists of undersampling the ultrasonic blood backscattered RF signal on a single channel. Conventional undersampling method in Doppler imaging system have to use a minimum of two identical parallel demodulation channels to reconstruct the multigate analytic Doppler signal. However, this system suffers from hardware complexity and problem of unbalance(gain and phase) between the channels. In order to reduce these problems, we have realized a multigate pulsed Doppler system using undersampling on a single channel, It requires sampling frequency at $4f_o$(where $f_o$ is the center frequency of the transducer) and 12bits A/D converter. The proposed " single-Channel RF Sampling" method aims to decrease the required sampling frequency proportionally to $4f_o$/(2k+1). To show the influence of the factor k on the measurements, we have compared the velocity profiles obtained in vitro and in vivo for different intersequence delays time (k=0 to 10). We have used a 4MHz center frequency transducer and a Phantom Doppler system with a laminar stationary flow. The axial and volumetric velocity profiles in the vessel have been computed according to factor k and have been compared. The influence of the angle between the ultrasonic beam and the flow axis direction, and the fluid viscosity on the velocity profiles obtained for different values of k factor is presented. For experiment in vivo on the carotid, we have used a data acquisition system with a sampling frequency of 20MHz and a dynamic range of 12bits. We have compared the axial velocity profiles in systole and diastole phase obtained for single channel RF sampling factor.ng factor.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.11 no.4
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• pp.808-814
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• 2007

In this paper, the measurement system of crane moving range is concerned with range recognition technology using phase and magnitude of radio wave. By the proposed technology, we design the radio transmitter and receiver and realize the measurement system, and save the data in disk that is earned from 900Mhz RF signal, middle frequency 450khz of analog signal. As a result of RF measurement, we got 9.3 dBm of RF output and 96 dBc@10khz of phase noise. Range information is earned the data through digital signal processing of IF signal. For the estimation of range measured, we analyze the difference between real range and measurement range, and also suggest the method to remove the measurement error using average processing and amplitude properties. A result is 0.12 and 0.00422 deviation in l0mn-30m and within 5m respectively, and then 2.4E-04 deviation in 4m by using compensation of level characteristics lately.

• Proceedings of the Korean Institute of Communication Sciences Conference
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• 2004.07a
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• pp.308-308
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• 2004

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.11a
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• pp.22-27
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• 1992

Phosphorus doped hydrogenated microcrystalline silicon (${\mu}c$-Si:H) thin films were deposited by PECVD (Plasma Enhanced Chemical Vapour Deposition) method using 10.2% $SiH_4$ gas (diluted in Ar) and 308ppm $PH_3$ gas (diluted in Ar). The structural, optical and electrical properties of the films were investigated as a function of substrate temperature(15 to $400^{\circ}C$) and RF power(10 to 120W). The thin film deposited by varing substrate temperature had columnar structure and microcrystalline phase. The volume fraction of microcrystalline phase in the films deposited at RF power of 80W, increased with increasing substrate temperature up to $200^{\circ}C$, and then decreased with further increasing substrate temperature. Volume fraction of microcrystalline phase increased monotonously with increasing RF power at substrate temperature of $250^{\circ}C$. With increasing volume fraction of microcrystalline, electrical resistivity of films decreased to 0.274 ${\Omega}cm$.

• ETRI Journal
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• v.36 no.6
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• pp.924-930
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• 2014

This paper presents a $0.13{\mu}m$ CMOS 3-level envelope delta-sigma modulation (EDSM) RF signal generator, which synthesizes a 2.6 GHz-centered fully symmetrical 3-level EDSM signal for high-efficiency power amplifier architectures. It consists of an I-Q phase modulator, a Class B wideband buffer, an up-conversion mixer, a D2S, and a Class AB wideband drive amplifier. To preserve fast phase transition in the 3-state envelope level, the wideband buffer has an RLC load and the driver amplifier uses a second-order BPF as its load to provide enough bandwidth. To achieve an accurate 3-state envelope level in the up-mixer output, the LO bias level is optimized. The I-Q phase modulator adopts a modified quadrature passive mixer topology and mitigates the I-Q crosstalk problem using a 50% duty cycle in LO clocks. The fabricated chip provides an average output power of -1.5 dBm and an error vector magnitude (EVM) of 3.89% for 3GPP LTE 64 QAM input signals with a channel bandwidth of 10/20 MHz, as well as consuming 60 mW for both channels from a 1.2 V/2.5 V supply voltage.

• Journal of the Korean Society for Heat Treatment
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• v.31 no.5
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• pp.237-243
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• 2018

In-rich InGaN epilayers were grown on (0001) sapphire substrates by radio-frequency plasma-assisted molecular beam epitaxy (RF-MBE). InGaN epilayers grown at various growth condition were observed by SEM, XRD, and RHEED. When plasma power of nitrogen increased from 290 to 350 W, surface morphology and crystal quality became worse according to more active nitrogen on the surface of InGaN at N-rich growth condition. As In composition was reduced from 89 to 71% by changing the incoming flux of In and Ga, surface morphology and crystal quality became worse. In addition, weak peaks of cubic InGaN phase was observed from InGaN layer with 71% In composition by XRD ${\Phi}$ scan measurement. When growth temperature decreased from 500 to $400^{\circ}C$, RHEED diffraction pattern was changed to be from streaky to spotty which means atomically rough surface, and spotty pattern showed cubic symmetry of InGaN clearly. XRD ${\Phi}$ scan measurement gave clear evidence that more cubic InGaN phase was formed at low growth temperature. All these results indicates that extremely low surface mobility of Ga adatom caused inferior crystal quality and cubic InGaN phase.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.13 no.5
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• pp.854-859
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• 2009

Many pilot projects are developed using USN(Ubiquitous Sensor network). Recently USN has more attention to be used for the applications of circumstance monitoring. In order to acquire information from sensor nodes, sensor nodes need a RF transceiver. In this paper we describe the design of a RF transceiver, based on IEEE 802.15.4, for sensor nodes operating in 2.4GHz frequency band. The architecture to be implemented and the electrical performance specifications satisfied IEEE 802.15.4 are presented. The noise figure of a receiver, selectivity, phase noise of a frequency synthesizer, transmitter's linearity and spectrum mask are derived as a design parameters from the specifications of IEEE 802.15.4.

• Progress in Superconductivity
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• v.4 no.2
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• pp.153-156
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• 2003

We have studied fabrication of $MgB_2$ thin film on $SrTiO_3$ (001) and r-cut $A1_2$$O_3$ substrates by rf magnetron sputtering method using and $ MgB_2$ single target and two targets of Mg and B, respectively. Based on P -T phase diagram of $MgB_2$ and vapor pressure curves of Mg and B, a three-step process was employed. B layer was deposited at the bottom to enhance the film adhesion to the substrate. Secondly, co-sputtering of Mg and B was done. Finally, Mg was sputtered on top to compensate fur the loss of Mg during annealing. Subsequently, $MgB_2$ films were in-situ annealed in various conditions. The sample fabricated using the three-step process showed $T_{c}$ of 24 K and formation of superconducting $MgB_2$ phase was confirmed by XRD spectra. In case of co-sputtering deposition, $T_{c}$ depended on annealing time and argon pressure. However, those made by single-target sputtering showed non-superconducting behavior or low transition temperature, at best.est.