• Title/Summary/Keyword: RF phase

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Traveling-wave Ti:LiNbO3 optical modulator capable of complete switching (완전 스위칭이 가능한 Ti:LiNbO3 진행파 광변조기)

  • 곽재곤;김경암;김영문;정은주;피중호;박권동;김창민
    • Korean Journal of Optics and Photonics
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    • v.14 no.5
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    • pp.545-554
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    • 2003
  • Design of the optical modulator composed of a three-waveguide coupler and CPW traveling-wave electrodes was carried out. Switching phenomena of three-waveguide couplers were analyzed by using the coupled mode theory, and the coupling-lengths of the devices were calculated by means of the FDM. CPW traveling-wave electrodes were analysed by the CMM and SOR simulation technique in order to find the conditions of phase-velocity and impedance matching. Traveling-wave modulators were fabricated on z-cut LiNbO$_3$ substrate. Ti was in-diffused in LiNbO$_3$ to make waveguides and Au electrodes were built on the waveguides by the electrolyte technique. The fabricated modulator chip was end-polished, pig-tailed and packaged in a brass mount with K-connector. The insertion loss and the switching voltage of the optical modulator were about 4㏈ and 19V, respectively. Network analyzer was used to obtain the S parameter and the corresponding RF response. From the measurement, parameters of the traveling-wave electrodes were extracted to be Z$_{c}$= 45 Ω, N$_{eff}$=2.20, and $\alpha$$_{0}$=0.055/cm√GHZ. The measured optical response R($\omega$) was compared with the theoretically estimated one, showing both responses agree well. The measurement results revealed that 3㏈ bandwidth turned out to be about 13 GHz.

A Study of Noncontact Heartbeat and Respiration Detection Using the Doppler Radar (도플러 레이더를 이용한 비접촉 방식의 심박 및 호흡 검출에 관한 연구)

  • Shin, Jae-Yeon;Cho, Sung-Pil;Jang, Byung-Jun;Park, Ho-Dong;Lee, Yun-Soo;Lee, Kyoung-Joung
    • Journal of the Institute of Electronics Engineers of Korea SC
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    • v.46 no.1
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    • pp.1-9
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    • 2009
  • In this paper, a 2.4 GHz doppler radar system consisting of a doppler radar sensor and a baseband module were designed to detect heart beat and respiration signal without direct skin contact. The doppler radar system emits RF signal of 2.4 GHz toward human chest, and then detects phase modulation of the reflected signal so as to investigate cardiopulmonary activities. The heartbeat and respiration signals acquired from I/Q channels of the doppler radar system are applied to the pre-processing circuit, the amplification circuit, and the offset circuit of the baseband module. The designed system was tested on mouse, rabbit and mankind, which have different range of heart rates and respiration signals, to evaluate detection accuracy of the system. ECG acquisition system and respiration transducer were used to generate the reference signal. In our experiments, a performance of detection were found to be high in the case that the subject stays still. In this paper, we confirmed that non-contact heart beat and respiration detection using the doppler radar has the possibility and limitation according to distance, cardiopulmonary activities, range of heart rates and respiration.

Structural and Electrical Properties of Fluorine-doped Zinc Tin Oxide Thin Films Prepared by Radio-Frequency Magnetron Sputtering

  • Pandey, Rina;Cho, Se Hee;Hwang, Do Kyung;Choi, Won Kook
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.335-335
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    • 2014
  • Over the past several years, transparent conducting oxides have been extensively studied in order to replace indium tin oxide (ITO). Here we report on fluorine doped zinc tin oxide (FZTO) films deposited on glass substrates by radio-frequency (RF) magnetron sputtering using a 30 wt% ZnO with 70 wt% SnO2 ceramic targets. The F-doping was carried out by introducing a mixed gas of pure Ar, CF4, and O2 forming gas into the sputtering chamber while sputtering ZTO target. Annealing temperature affects the structural, electrical and optical properties of FZTO thin films. All the as-deposited FZTO films grown at room temperature are found to be amorphous because of the immiscibility of SnO2 and ZnO. Even after the as-deposited FZTO films were annealed from $300{\sim}500^{\circ}C$, there were no significant changes. However, when the sample is annealed temperature up to $600^{\circ}C$, two distinct diffraction peaks appear in XRD spectra at $2{\Theta}=34.0^{\circ}$ and $52.02^{\circ}$, respectively, which correspond to the (101) and (211) planes of rutile phase SnO2. FZTO thin film annealed at $600^{\circ}C$ resulted in decrease of resistivity $5.47{\times}10^{-3}{\Omega}cm$, carrier concentration ~1019 cm-3, mobility~20 cm2 V-1s-1 and increase of optical band gap from 3.41 to 3.60 eV with increasing the annealing temperatures and well explained by Burstein-Moss effect. Change of work function with the annealing temperature was obtained by ultraviolet photoemission spectroscopy. The increase of annealing temperature leads to increase of work function from ${\phi}=3.80eV$ (as-deposited FZTO) to ${\phi}=4.10eV$ ($600^{\circ}C$ annealed FZTO) which are quite smaller than 4.62 eV for Al-ZnO and 4.74 eV for SnO2. Through X-ray photoelectron spectroscopy, incorporation of F atoms was found at around the binding energy of 684.28 eV in the as-deposited and annealed FZTO up to 400oC, but can't be observed in the annealed FZTO at 500oC. This result indicates that F atoms in FZTO films are loosely bound or probably located in the interstitial sites instead of substitutional sites and thus easily diffused into the vacuum from the films by thermal annealing. The optical transmittance of FZTO films was higher than 80% in all specimens and 2-3% higher than ZTO films. FZTO is a possible potential transparent conducting oxide (TCO) alternative for application in optoelectronics.

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Changes of Saponin during the Cultivation of Soybean Sprout (콩나물 생장 중 사포닌의 변화)

  • Oh, Bong-Yun;Park, Bock-Hee;Ham, Kyung-Sik
    • Korean Journal of Food Science and Technology
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    • v.35 no.6
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    • pp.1039-1044
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    • 2003
  • We investigated the changes in saponins during the cultivation of soybean sprout. Crude saponin content was 4.15mg/g in germinated soybean and reached its peark (5.33mg/g) in soybean sprout cultivated for six days. Saponin content in the cotyledon, stem, and root of the soybean sprout cultivated for six days were 4.17, 7.46, and 7.45mg/g, respectively. Soyasaponins extracted from the soybean sprout were analyzed with LC-electrospray ionization (ESI)-mass spectrometry, in which a reverse phase $C_18$ column was used for separation of saponins. In the soybeen sprout, group B saponin, I, II, III, IV, and V increased 7, 2, 1.4, 8.7, and 3.3 fold, respectively, compared to those in the soybean seed. Group B saponin I, II, III, IV, and V in the stem of the soybean sprout were 10.53, 1.45, 10.49, 5.72 and 8.14 fold the level of those in the cotyldon, respectively. In the root, the contents of group B saponin I, III, IV, and V were 5.54, 2.77, 4.86 and 9.73 fold, respectively, higher than those in cotyledon, but the content of group B saponin 2 was 2.96 fold less than that in cotyledon. These results indicate that the biosyntheses of group B saponins are differentially regulated in growing soybean sprout.

Characterizations of Sputtered PZT Films on Pt/Ti/Si Substrates. (Pt/Ti/Si 기판위에 형성시킨 PZT박막의 특성)

  • Hwang, Yu-Sang;Baek, Su-Hyeon;Baek, Sang-Hun;Park, Chi-Seon;Ma, Jae-Pyeong;Choe, Jin-Seok;Jeong, Jae-Gyeong;Kim, Yeong-Nam;Jo, Hyeon-Chun
    • Korean Journal of Materials Research
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    • v.4 no.2
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    • pp.143-151
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    • 1994
  • On PT/Ti/Si substrates, PZT thln fllms are deposited at $300^{\circ}C$ by rf magnetron sputtering uslng a $(PbZr_{52}, Ti_{48})O_{3}$ composltc cerarnlc target. To abtaln, the stable phase, perovskltc structure, furnace annealmg techmque had been cmplo:~d In PbO amb~ent for the $550^{\circ}C$-$750^{\circ}C$ temperature ranges. On Pt(250$\AA$)/Ti(500$\AA$)/Si, Pt(1000)$\AA$/Ti(500$\AA$)/Si substrates, effects of Ti layer and Pt thickness are studled. Though thickness of the Pt layer 1s 1000$\AA$). oxygen diffusion is not prevented and accelerated by Ti layer actlng for oxygen sink sites durmg furnace annealing. The upper TI layer 1s transformed Into TIOX by oxyen dlffuslon and lower Ti layer Into silicide with in-diffused Pt. The formation of TiOx layer seems to affect the orlentatton of the PZT layer. Furnace annealed f~lm shows ferroelectr~c and electrical properties wth a remanent polarlzation of 3.3$\mu A /\textrm{cm}^2$, , coerclve fleld of 0.15MV/cm, a=571 (10kHz), leakage current 32.65$\mu A /\textrm{cm}^2$, , breakdown voltage of 0.4OMV/cm.

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Effect of Ti-Doped Al2O3 Coating Thickness and Annealed Condition on Microstructure and Electrochemical Properties of LiCoO2 Thin-Film Cathode (Ti 첨가 Al2O3 코팅층의 두께와 열처리 조건이 LiCoO2 양극 박막의 미세구조와 전기화학적 특성에 미치는 영향)

  • Choi, Ji-Ae;Lee, Seong-Rae;Cho, Won-Il;Cho, Byung-Won
    • Korean Journal of Materials Research
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    • v.17 no.8
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    • pp.447-451
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    • 2007
  • We investigated the dependence of the various annealing conditions and thickness ($6\sim45nm$) of the Ti-doped $Al_2O_3$ coating on the electrochemical properties and the capacity fading of Ti-doped $Al_2O_3$ coated $LiCoO_2$ films. The Ti-doped-$Al_2O_3$-coating layer and the cathode films were deposited on $Al_2O_3$ plate substrates by RF-magnetron sputter. Microstructural and electrochemical properties of Ti-doped-$Al_2O_3$-coated $LiCoO_2$ films were investigated by transmission electron microscopy (TEM) and a dc four-point probe method, respectively. The cycling performance of Ti-doped $Al_2O_3$ coated $LiCoO_2$ film was improved at higher cut-off voltage. But it has different electrochemical properties with various annealing conditions. They were related on the microstructure, surface morphology and the interface condition. Suppression of Li-ion migration is dominant at the coating thickness >24.nm during charge/discharge processes. It is due to the electrochemically passive nature of the Ti-doped $Al_2O_3$ films. The sample be made up of Ti-doped $Al_2O_3$ coated on annealed $LiCoO_2$ film with additional annealing at $400^{\circ}C$ had good adhesion between coating layer and cathode films. This sample showed the best capacity retention of $\sim92%$ with a charge cut off of 4.5 V after 50 cycles. The Ti-doped $Al_2O_3$ film was an amorphous phase and it has a higher electrical conductivity than that of the $Al_2O_3$ film. Therefore, the Ti-doped $Al_2O_3$ coated improved the cycle performance and the capacity retention at high voltage (4.5 V) of $LiCoO_2$ films.

Extraction and Preprocessing Methods for Ginsenosides Analysis of Panax ginseng C.A. Mayer (인삼의 진세노사이드 분석을 위한 추출 및 전처리법)

  • Kim, Geum-Soog;Hyun, Dong-Yun;Kim, Young-Ock;Lee, Sung-Woo;Kim, Young-Chang;Lee, Seung-Eun;Son, Yeong-Deck;Lee, Min-Jeong;Park, Chung-Berm;Park, Ho-Ki;Cha, Seon-Woo;Song, Kyung-Sik
    • Korean Journal of Medicinal Crop Science
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    • v.16 no.6
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    • pp.446-454
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    • 2008
  • An advanced extraction method by ultrasonic extraction with applied solid phase extraction (SPE) has been developed for the determination of simultaneous eight major ginsenosides, namely ginsenosides Rg1, Re, Rf, Rb1, Rg2, Rc, Rb2, and Rd in the root of Panax ginseng. Four extraction methods including n-BuOH reflux extraction (Method A), 70% EtOH reflux extraction (Method B), 50% MeOH reflux extraction with SPE (Method C), and 50% MeOH ultrasonication with SPE clean-up process (Method D) were investigated for the determination of eight major ginsenosides. Total contents of ginsenosides were highest by extraction of Method C as $2.408{\pm}0.011%$. However, Method D was evaluated as relatively simpler and more efficient method due to short extraction time, small solvent consumption and less expensive, compared to conservative reflux method. Ginsenosides were also satisfactorily separated with good resolution and the accuracy range was between 1.05 and 4.06% as relative standard deviation (RSD) by Method D. SPE condition and HPLC condition were further optimized for determination of eight major ginsenosides by the ultrasonic extraction method. Conclusively, ultrasonic extraction of 2 g sample of ginseng using ultrasonic bath and 1 loading for SPE was evaluated as proper condition for extraction of ginseng.

Effect of Variety and Shading Material on Growth Characteristics and Ginsenoside Contents of 2-Year-Old Ginseng (Panax ginseng C. A. Meyer) Grown in Imperfectly Drained Paddy Soil (배수약간불량 논토양에서 품종 및 해가림 피복물 종류가 2년생 인삼의 생육과 진세노사이드 함량에 미치는 영향)

  • Lee, Sung-Woo;Yeon, Byeong-Yeol;Kim, Chung-Guk;Shin, Yoo-Su;Hyun, Dong-Yun;Kang, Seung-Won;Cha, Seon-Woo
    • Korean Journal of Medicinal Crop Science
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    • v.16 no.6
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    • pp.434-438
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    • 2008
  • To selection of optimal shading material, two-year-old ginseng (Panax ginseng C. A. Meyer) of new cultivar, 'Cheonpoong' (CP), and native species 'Hwangsookjong' (HS) were cultured under three kinds of shading materials such as three-layered blue and a one-layered black PE (polyethylene) net (TBSB), blue PE sheet (BS), and aluminium coated PE sheet (AS) in imperfectly drained paddy soil. Growth characteristics, yield and ginsenoside contents were investigated under three shading materials. Yield and ginsenoside contents of ginseng were distinctly affected by intensity and quality of sunlight penetrated through shading materials. Light transmission ratio, air and soil temperature according to shading materials were higher in order of BS, AS, and TBSB. However, ratio of aerial phase and porosity of the soil were higher in order of AS, BS, and TBSB, respectively. There was no significantly difference in the ratio of rusty colored root by shading materials. CP showed higher stem length, leaf area, and root weight than that of HS, while the former showed distinctly lower discolored leaf ratio than that the other. Eight kinds of ginsenosides content of CP were higher than that of HS in $Rg_1$, Re, Rf, $Rb_1$ and Rc except $Rg_2$, $Rb_2$, and $Rb_3$. Total ginsenoside contents of CP was distinctly higher than that of HS. Total ginsenoside contents as affected by shading materials was higher in order of BS, TBSB, and AS in CP, while TBSB, BS, and AS in HS.

Solution-Processed Nontoxic and Abundant $Cu_2ZnSnS_4$ for Thin-Film Solar Cells

  • Mun, Ju-Ho
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2012.05a
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    • pp.65-65
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    • 2012
  • Copper zinc tin sulfide ($Cu_2ZnSnS_4$, CZTS) is a very promising material as a low cost absorber alternative to other chalcopyrite-type semiconductors based on Ga or In because of the abundant and economical elements. In addition, CZTS has a band-gap energy of 1.4~1.5eV and large absorption coefficient over ${\sim}10^4cm^{-1}$, which is similar to those of $Cu(In,Ga)Se_2$(CIGS) regarded as one of the most successful absorber materials for high efficient solar cell. Most previous works on the fabrication of CZTS thin films were based on the vacuum deposition such as thermal evaporation and RF magnetron sputtering. Although the vacuum deposition has been widely adopted, it is quite expensive and complicated. In this regard, the solution processes such as sol-gel method, nanocrystal dispersion and hybrid slurry method have been developed for easy and cost-effective fabrication of CZTS film. Among these methods, the hybrid slurry method is favorable to make high crystalline and dense absorber layer. However, this method has the demerit using the toxic and explosive hydrazine solvent, which has severe limitation for common use. With these considerations, it is highly desirable to develop a robust, easily scalable and relatively safe solution-based process for the fabrication of a high quality CZTS absorber layer. Here, we demonstrate the fabrication of a high quality CZTS absorber layer with a thickness of 1.5~2.0 ${\mu}m$ and micrometer-scaled grains using two different non-vacuum approaches. The first solution-processing approach includes air-stable non-toxic solvent-based inks in which the commercially available precursor nanoparticles are dispersed in ethanol. Our readily achievable air-stable precursor ink, without the involvement of complex particle synthesis, high toxic solvents, or organic additives, facilitates a convenient method to fabricate a high quality CZTS absorber layer with uniform surface composition and across the film depth when annealed at $530^{\circ}C$. The conversion efficiency and fill factor for the non-toxic ink based solar cells are 5.14% and 52.8%, respectively. The other method is based on the nanocrystal dispersions that are a key ingredient in the deposition of thermally annealed absorber layers. We report a facile synthetic method to produce phase-pure CZTS nanocrystals capped with less toxic and more easily removable ligands. The resulting CZTS nanoparticle dispersion enables us to fabricate uniform, crack-free absorber layer onto Mo-coated soda-lime glass at $500^{\circ}C$, which exhibits a robust and reproducible photovoltaic response. Our simple and less-toxic approach for the fabrication of CZTS layer, reported here, will be the first step in realizing the low-cost solution-processed CZTS solar cell with high efficiency.

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Laser Acceleration of Electron Beams to the GeV-class Energies in Gas Jets

  • Hafz, Nasr A.M.;Jeong, Tae-Moon;Lee, Seong-Ku;Choi, Il-Woo;Pae, Ki-Hong;Kulagin, Victor V.;Sung, Jae-Hee;Yu, Tae-Jun;Cary, John R.;Ko, Do-Kyeong;Lee, Jong-Min
    • Journal of the Optical Society of Korea
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    • v.13 no.1
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    • pp.8-14
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    • 2009
  • In a laser-plasma wakefield accelerator, the ponderomotive force of an ultrashort high intensity laser pulse excites a longitudinal wave or plasma bubble in a way similar to the excitation of a wake wave behind a boat as it propagates on the water surface. Electric fields inside the plasma bubble can be several orders of magnitude higher than those available in conventional RF-based particle accelerator facilities which are limited by material breakdown. Therefore, if an electron bunch is properly phase-locked with the bubble's acceleration field, it can gain relativistic energies within an extremely short distance. Here, in the bubble regime we show the generation of stable and reproducible sub GeV, and GeV-class electron beams. Supported by three-dimensional particle-in-cell simulations, our experimental results show the highest acceleration gradients produced so far. Simulations suggested that the plasma bubble elongation should be minimized in order to achieve higher electron beam energies.