• 한국정보통신학회논문지
• /
• 제23권7호
• /
• pp.807-815
• /
• 2019

본 논문에서는 RF CMOS 180-nm 공정을 이용하여 무선 통신 기기에서 quad-band를 지원하기 위한 전력 증폭기를 설계하였다. 제안한 전력증폭기는 low-band인 0.9,1.8,2.4 GHz 와 high-band인 5 GHz 로 구성되어있으며, 각각 입력 정합회로에서는 스위치를 사용하지 않는 구조를 제안하였다. 그리고 최대 선형 전력 확보를 위해 출력 정합회로는 각 주파수 대역에서의 전력 정합지점으로 임피던스 변환을 진행하였다. 제안한 전력증폭기는 무선 통신 변조 신호를 사용하여 검증하였다. Long-term evolution(LTE) 10 MHz 변조 신호를 이용하여 0.9 GHz 및 1.8 GHz 를 측정하였으며, 이때 출력 전력은 각각 23.55 dBm 및 24.23 dBm으로 측정 되었고, 20 MHz 변조 신호를 사용한 경우, 1.8 GHz에서 출력 전력 22.24 dBm 이 측정되었다. Wireless local area network(WLAN) 802.11n 변조 신호를 이용하여 2.4 GHz 및 5.0 GHz 대역을 측정하였으며, 출력 전력은 20.58 dBm 및 17.7 dBm으로 확인되었다.

• KSII Transactions on Internet and Information Systems (TIIS)
• /
• 제11권10호
• /
• pp.5116-5131
• /
• 2017

This paper studies the radio frequency to direct current (RF-DC) conversion efficiency of rectennas applicable to wireless power transfer systems, where multiple receive antennas are arranged in serial, parallel or cascaded form. To begin with, a 2.45 GHz dual-diode rectifier is designed and its equivalent linear model is applied to analyze its output voltage and current. Then, using Advanced Design System (ADS), it is shown that the rectifying efficiency is as large as 66.2% in case the input power is 15.4 dBm. On the other hand, to boost the DC output, three composite rectennas are designed by inter-connecting two dual-diode rectifiers in serial, parallel and cascade forms; and their output voltage and current are investigated using their respective equivalent linear models. Simulation and experimental results demonstrate that all composite rectennas have almost the same RF-DC conversion efficiency as the dual-diode rectifier, yet the output of voltage or current can be significantly increased; in particular, the cascade rectenna obtains the highest rectifying efficiency.

• 한국산업정보학회논문지
• /
• 제6권2호
• /
• pp.31-37
• /
• 2001

본 연구에서는 WLL 다중채널 수신단말기 RF-모듈을 제작하였다. 그리고 WLL 다중채널 RF-모듈의 실질적인 성능을 수신감도, 인접채널 선택도, 스퓨리어스 응답제한 등의 파라미터를 이용하여 평가하였다. 실제로 WLL 다중채널용 RF-모듈을 제작하여 측정한 결과, 입력전력이 -90 dBm에서 -30 dBm까지 변화할 때 -30 dBm의 일정한 출력전력이 유지되어 약 60 dB의 동작범위를 가졌다. WLL 단말기 RF 출력단의 통과대역내의 평탄도가 약 2 dB 이내를 유지하여 대역화산신호의 전력제어가 정확히 이루어지고 있음을 확인하였다. 그리고 WLL RF 수신 전단의 전송대역폭은 10 MHz으로 본 연구의 설계목표와 정확히 일치하였다.

• 대한전자공학회:학술대회논문집
• /
• 대한전자공학회 1999년도 추계종합학술대회 논문집
• /
• pp.851-854
• /
• 1999

A high efficient, CMOS RF power amplifier at a 2.SV power supply for the band of 902-928MHz was designed and analyzed in 0.25${\mu}{\textrm}{m}$ standard CMOS technology. The output power of designed amplifier is being digitally controlled from a minimum of 2㎽ to a maximum of 21㎽, corresponding to a dynamic range of l0㏈ power control. The frequency response of this power amplifier is centered roughly at 915MHz. The power added efficiency of designed amplifer is almost 48% at maximum output power of 21㎽.

• 한국전자파학회논문지
• /
• 제17권5호
• /
• pp.408-415
• /
• 2006

본 논문에서는 RF 전력 증폭기의 메모리 효과를 모델링하기 위한 향상된 시스템 레벨의 모델을 제안하고, 사전 왜곡 선형화기를 적용한 전력 증폭기의 출력 신호의 스팩트럼 밀도를 분석하여 제안한 모델을 검증하였다. 기존의 Three-Box(Wiener-Hammerstein) 모델은 전력 증폭기의 RF 주파수 특성을 입출력 선형 필터를 사용하여 모델링한 것으로, Hammerstein 구조의 사전 왜곡 선형화기를 사용하면 이론적으로 인접 채널 간섭을 모두 제거할 수 있다. 그러나, 실제 전력 증폭기의 경우 RF 주파수 특성 외의 메모리 현상에 의해 주파수 특성만을 보정한 Hammerstein 사전 왜곡기에 의한 인접 채널 간섭비의 향상 정도가 제한적이다. 이러한 출력 스팩트럼 특성은 Three-Box 모델의 메모리 성분을 가지지 않는 비선형 블록을 메모리 다항식으로 바꾸어 준 모델을 사용하여 정확히 예측될 수 있다. IEEE 802.11 g 무선 랜 전력 증폭기에 Hammerstein 구조의 사전 왜곡이 적용된 경우 측정된 인접 채널 스팩트럼 밀도값을 제안된 모델은 ${\pm}30$ MHz의 인접 채널 범위에서 2 dB 이하의 오차로 예측하였다.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1994년도 하계학술대회 논문집 A
• /
• pp.180-182
• /
• 1994

In an electron storage ring of Pohang Light Source (PLS), electrons lose their energy in every turn by the synchronous radiation. A high power RF amplifier is employed to compensate the electron energy that is lost by the synchronous radiation. The specification of RF amplifier is an continuous output power of 60 kW at 500.082 MHz operating frequency. The power is supplied to RF cavities in the storage ring tunnel. Total number of amplifier system currently required is three. Tile total number will be increased upto five as the operating condition of storage ring is upgraded. The RF amplifier is mainly consisted of a high voltage DC power supply, an intermediate RF power amplifier (IPA), and a klystron tube. In this article, the design of RF amplifier system and characteristics of the klystron tube will be discussed.

• 한국전자파학회:학술대회논문집
• /
• 한국전자파학회 2003년도 종합학술발표회 논문집 Vol.13 No.1
• /
• pp.74-78
• /
• 2003

This paper shows the dosimetric uncertainties of electromagnetic field at in-vivo and in-vitro experiments. For more accurate consequences of these researches, we have tried to find out any correlations among output power, power density and specific absorption rate(SAR) with the results of in-vivo, in-vitro tests and SAR reports of cellular phone and PDA. In the case of in-vivo tests, the power density has close statistical correlations with SAR value and in the event of in-vitro tests, the output power has considerable statistical correlations with SAR containing duty factor. On the other hand, we found that both power density and output power don't have any close correlations with SAR. And, we obtained fitted regression form among frequency, power density and SAR containing duty factor through multiple linear regression analysis.

• 제어로봇시스템학회:학술대회논문집
• /
• 제어로봇시스템학회 1995년도 Proceedings of the Korea Automation Control Conference, 10th (KACC); Seoul, Korea; 23-25 Oct. 1995
• /
• pp.87-90
• /
• 1995

When the ultrasonic transducer operating at l MHz for use in cleaning semiconductor wafers or other industsrial materials is driven from the MOS-FET DC-to RF inverter, the output power severely depends on the frequency of operation since the quality factor of the transducer is high. In order to tune to the eresonating frequency of the ultrasonic transducer, the drive signal frequency of the MOS-FET power inverter is automatically scananed until the frequency is set at the resonating frequency of the ultrasonic transducer is maximized. The control circuit consists of an output power sensing circuit, a PLL controller, a frequency standard, and other peripheral circuits. The operation was satisfactory when the transducer having an output of 600 W at 1 MHz was used.

• Journal of electromagnetic engineering and science
• /
• 제9권2호
• /
• pp.98-104
• /
• 2009

An InGaP/GaAs MMIC LC VCO designed with Harmonic Noise Frequency Filtering(HNFF) technique is presented. In this VCO, internal inductance is found to lower the phase noise, based on an analytic understanding of phase noise. This VCO directly drives the on-chip double balanced mixer to convert RF carrier to IF frequency through local oscillator. Furthermore, final power performance is improved by output amplifier. This paper presents the design for a 1.721 GHz enhanced LC VCO, high power double balance mixer, and output amplifier that have been designed to optimize low phase noise and high output power. The presented asymmetric inductance tank(AIT) VCO exhibited a phase noise of -133.96 dBc/Hz at 1 MHz offset and a tuning range from 1.46 GHz to 1.721 GHz. In measurement, on-chip down-converter shows a third-order input intercept point(IIP3) of 12.55 dBm, a third-order output intercept point(OIP3) of 21.45 dBm, an RF return loss of -31 dB, and an IF return loss of -26 dB. The RF-IF isolation is -57 dB. Also, a conversion gain is 8.9 dB through output amplifier. The total on-chip down-converter is implanted in 2.56${\times}$1.07 mm$^2$ of chip area.

• 전자공학회논문지D
• /
• 제35D권4호
• /
• pp.101-108
• /
• 1998

We examine experimentally the dependence of output width on DC bias, RF power, and RF frequency in a gain-switched semiconductor laser. The optimum short pulses are obtained around threshold DC bias. The DC bias to generatoe shorter pulses decreases the RF power increases, whereas it increases to above threshold as the RF freqnecy increases. The pulse width becomes less sensitive to the variations of the DC bias, as the RF bias, or frquency increases.