• Proceedings of the Korean Magnestics Society Conference
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• 1991.11a
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• pp.88-89
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• 1991

• Proceedings of the Korean Vacuum Society Conference
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• 2008.08a
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• pp.106-106
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• 2008

• Proceedings of the Materials Research Society of Korea Conference
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• 1998.11a
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• pp.128-128
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• 1998

• Journal of the Korean Vacuum Society
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• v.21 no.3
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• pp.158-163
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• 2012

In this work, we have fabricated the $TiO_2$ thin films on Si and glass, polymer insulator substrates as the self-cleaning coating of polymer insulator. $TiO_2$ films were deposited by RF magnetron sputtering method with $TiO_2$ ceramic target and $TiO_2$ films of 100 nm thickness were fabricated with various RF powers. We have investigated the optical and surface, and structural properties of $TiO_2$ films prepared with various RF powers. As a result, the value of the contact angle of $TiO_2$ thin film is increased with increasing RF power and the value of the rms surface roughness is increased. The transmittance is decreased with increasing RF power. These results indicate that the variation of the surface and optical properties of $TiO_2$ thin films is related to the sputtering effects by increasing RF power.

• Journal of the Korean institute of surface engineering
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• v.36 no.1
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• pp.14-21
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• 2003

Thin films of ZrO$_2$ and TiO$_2$ were deposited on Si(100) substrates using RF magnetron sputtering technique. To study an influence of the sputtering parameters, systematic experiments were carried out in this work. XRD data show that the $ZrO_2$ films were mainly grown in the [111] orientation at the annealing temperature between 800 and $1000^{\circ}C$ while the crystal growth direction was changed to be [012] at above $1000^{\circ}C$. FT-IR spectra show that the oxygen stretching peaks become strong due to $SiO_2$ layer formation between film layers and silicon surface after annealing, and proved that a diffusion caused by either oxygen atoms of $ZrO_2$ layers or air into the interface during annealing. Different crystal growth directions were observed with the various deposition parameters such as annealing temperature, RF power magnitude, and added $O_2$ amounts. The growth rate of $TiO_2$ thin films was increased with RF power magnitude up to 150 watt, and was then decreased due to a sputtering effect. The maximum growth rate observed at 150 watt was 1500 nm/hr. Highly oriented, crack-free, stoichiometric polycrystalline $TiO_2$<110> thin film with Rutile phase was obtained after annealing at $1000^{\circ}C$ for 1 hour.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.169-169
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• 2016

In this paper, we report electrical, optical and structural properties of Al-doped zinc oxide (AZO) thin films deposited at different substrate temperatures and pressures. The films were prepared by radio frequency (RF) magnetron sputtering on glass substrates in argon (Ar) ambient. The X-ray diffraction analysis showed that the AZO films deposited at room temperature (RT) and 20 Pa were mostly oriented along a-axis with preferred orientation along (100) direction. There was an improvement in resistivity ($3.7{\times}10^{-3}{\Omega}-cm$) transmittance (95%) at constant substrate temperature (RT) and working pressure (20 Pa) using the Hall-effect measurement system and UV-vis spectroscopy, respectively. Our results have promising applications in low-cost transparent electronics, such as the thin-film solar cells and thin-film transistors due to favourable deposition conditions. Furthermore our film deposition method offers a procedure for preparing highly oriented (100) AZO films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.442-443
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• 2007

Al-N co-doped ZnO films were fabricated on n-Si (100) and homo-buffer layers in the mixture of oxygen and nitrogen at $450^{\circ}C$ by magnetron sputtering. Target was ZnO ceramic mixed with $2wt%Al_2O_3$. XRD spectra show that as-grown and $600^{\circ}C$ annealed films are prolonged along crystal c-axis. However they are not prolonged in (001) plane vertical to c-axix. The films annealed at $800^{\circ}C$ are not prolonged in any directions. Codoping makes ZnO films unidirectional variation. XPS show that Al content hardly varies and N escapes with increasing annealing temperature from $600^{\circ}C\;to\;800^{\circ}C$. The electric properties of as-grown films were tested by Hall Effect with Van der Pauw configuration show some of them to be p-type conduction.

• Progress in Superconductivity
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• v.4 no.2
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• pp.153-156
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• 2003

We have studied fabrication of $MgB_2$ thin film on $SrTiO_3$ (001) and r-cut $A1_2$$O_3$ substrates by rf magnetron sputtering method using and $ MgB_2$ single target and two targets of Mg and B, respectively. Based on P -T phase diagram of $MgB_2$ and vapor pressure curves of Mg and B, a three-step process was employed. B layer was deposited at the bottom to enhance the film adhesion to the substrate. Secondly, co-sputtering of Mg and B was done. Finally, Mg was sputtered on top to compensate fur the loss of Mg during annealing. Subsequently, $MgB_2$ films were in-situ annealed in various conditions. The sample fabricated using the three-step process showed $T_{c}$ of 24 K and formation of superconducting $MgB_2$ phase was confirmed by XRD spectra. In case of co-sputtering deposition, $T_{c}$ depended on annealing time and argon pressure. However, those made by single-target sputtering showed non-superconducting behavior or low transition temperature, at best.est.

• Journal of Sensor Science and Technology
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• v.9 no.5
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• pp.357-364
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• 2000

The structural, electrical and gas sensing characteristics of $LaFeO_3$ thin films fabricated by r.f. magnetron sputtering method on $Al_2O_3$ substrates were investigated. (121) domonant crystalline plane was observed for the films heat-treated at above $600^{\circ}C$ and gas sensing properties showed p-type semiconductor behaviors. Gas sensing characteristics of the $LaFeO_3$ thin films was studied as a function of film thicknesses and heat treatment temperatures. While the variation of the film thickness showed a little effect on the sensitivity, the heat treatment temperature was critical to the sensitivity. The thin films with thickness of 400 nm heat-treated at $800^{\circ}C$ showed the sensitivity of 400% for 5000ppm CO and 60% for 350ppm $NH_3$ at the working temperature of $300^{\circ}C$.

• Korean Journal of Materials Research
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• v.12 no.1
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• pp.82-88
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• 2002

Chromium carbide films were deposited on high speed steels using a Cr_3C_2$ target by magnetron sputtering. Effects of the deposition parameters (power, Ar pressure and substrate temperature) on deposition rates and surface roughnesses of the films were investigated. The morphologies of those films were characterized by scanning electron microscopy and atomic force microscopy. The grain size of the samples deposited using dc-power is larger than that using equivalent rf-power. The hardness of the sample increases with increasing rf-power, whereas the elastic modulus nearly does not change with rf-power. The optimum sputter deposition conditions for chromium carbide on high speed steels in the corrosion resistance aspect were found to be the rf-power with small roughness.