• Journal of the Microelectronics and Packaging Society
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• v.12 no.3 s.36
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• pp.207-212
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• 2005

Al, Ti, Ta, and Cr thin films were deposited on a polyimide substrate using DC magnetron sputter to study the adhesion characteristics of metal films on polyimide substrates, while RF bias of 0 - 400 W was applied to the substrate during DC sputtering. The adhesion strength was evaluated using a 90-degree peel test. The peel tests showed that the adhesion strength was enhanced by applying the RF bias to the substrate in all specimens. Scanning electron microscopy and Auger depth profile of the fractured surfaces indicate that the polyimide underwent cohesive failure during peeling and heavy deformation was also observed in the metal films peeled from the polyimide substrate when the RF bias applied during the deposition. Cross-sectional transmission electron microscopy revealed that the metal/polyimide interface was not clear and complicated. This complicated interface, likely formed due to the RF bias applied to the substrate, was attributed to the adhesion enhancement observed during the bias sputtering.

• 전자공학회논문지 IE
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• v.43 no.2
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• pp.11-15
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• 2006

In this paper characteristics of polycrystalline silicon crystallized by excimer laser on plastic substrate under 150$^{\circ}C$ is investigated. Amorphous silicon is deposited by rf-magnetron sputter in atmosphere of Ar and He for preventing depletion effect by dehydrogenation as deposition by PECVD. After annealing by 308 nm, 30 Hz, double pulse type XeCl excimer laser, p-chnnel low temperature polycrystalline silicon TFT which maximum mobility is $64cm^2/V{\cdot}s$ at $344mJ/cm^2$ is fabricate.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.357-360
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• 2004

Al doped ZnO thin films have been were properties of excellent optical transmittance, low resistivity and wide bandgap where be widely used transparent electrode on solar cell. In this paper, ZnO:Al thin films on PC substrate were prepared by RF magnetron sputtering method using ceramic taget with diffrent deposition conditions. In addition, the electrical, structural, optical properties were investigated. we investigated sample properties of Sputter powers and pressures change in $25{\sim}125W,\;2{\times}10^{-2}{\sim}2{\times}10^{-3}Torr$.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2011.05a
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• pp.117-118
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• 2011

초경합금 위에 RF Magnetron Sputter를 이용하여 Ti 중간층을 증착 후 MPECVD(Microwave Plasma Enhanced Chemical Vapor Deposition) 시스템을 이용하여 나노결정 다이아몬드 박막을 증착 하였다. 공정압력, 마이크로웨이브 전력, Ar/$CH_4$ 조성비, 기판온도를 일정하게 놓고 직류 bias의 인가 여부를 변수로 하고 증착시간을 0.5, 1, 2시간으로 변화시켜 박막을 제작하였다. 제작된 시편은 FE-SEM과 AFM을 이용하여 다이아몬드 박막의 표면과 다이아몬드 박막의 표면 거칠기 등을 측정하였고, Raman spectroscopy와 XRD를 이용하여 다이아몬드 결정성을 확인하였다. Automatic Scratch �岵謙�ter를 이용하여 복합박막의 층별 접합력을 측정하였다. 바이어스를 인가하지 않고 다이아몬드 박막을 증착할 경우 증착 시간이 증가할수록 다이아몬드 입자의 평균 크기가 증가하며 입자들이 차지하는 면적이 증가하는 것을 확인하였다. 그러나 1시간이 경과해도 아직 완전한 박막은 형성되지 못하고 2시간 이상 증착 시 완전한 박막을 이루는 것이 확인되었다. 이에 비해서 바이어스 전압을 인가할 경우 1시간 내에 완전한 박막을 이루었다. 표면 거칠기는 바이어스를 인가한 경우가 그렇지 않은 경우에 비해서 조금 높은 것으로 나타났다. 이러한 바이어스 효과는 표면에서의 핵생성 밀도 증가와 재핵생성 속도 증가에 기인하는 것으로 해석된다.

• Korean Journal of Materials Research
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• v.11 no.7
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• pp.580-584
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• 2001

We have investigated the deposition characteristics of Ti-Si-N films obtained by rf magnetron sputtering with ratios of Ti/Si targets in an $Ar/N_2$ gas mixture. The growth rate and stoichiometry dependence of the Ti-Si-N films on the ratio of Ti/Si and $N_2$ flow rate ratio were found to be due to the different nitriding rate of Ti and Si targets. Additionally, their different sputtering yield of nitrified Ti and Si make a reason as well. Lowering Si content in the film favored the formation of crystalline TiN, leading to the low resistivity. Increasing N content led to the Ti-Si-N films having a higher density and compressive stress, suggesting that the N content in the film is one of the most important factors determining the diffusion barrier characteristics. In the current work, the optimum process conditions for the formation of efficient diffusion barrier of Ti-Si-N film has successfully obtained by manipulating the Ti/Si ratio of target and $N_2$ flow rate ratio.

• Korean Journal of Materials Research
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• v.21 no.5
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• pp.255-262
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• 2011

This paper has relatively high technical standard and experimental skill. The fabrication of TCO film with high transparency, low resistance and low chromaticity require exact control of several competing factors. This paper has resolved these problems reasonably well, thus recommended for publication. Indium tin oxide(ITO) thin films were by D.C. magnetron roll-to-roll sputter system utilizing ITO and $SiO_2$ targets of ITO and $SiO_2$. In this experiment, the effect of D.C. power, winding speed, and oxygen flow rate on electrical and optical properties of ITO thin films were investigated from the view point of sheet resistance, transmittance, and chromaticity($b^*$). The deposition of $SiO_2$ was performed with RF power of 400W, Ar gas of 50 sccm and the deposition of ITO, DC power of 600W, Ar gas of 50 sccm, $O^2$ gas of 0.2 sccm, and winding speed of 0.56m/min. High quality ITO thin films without $SiO_2$ layer had chromaticity of 2.87, sheet resistivity of 400 ohm/square, and transmittance of 88% and $SiO_2$-doped ITO Thin film with chromaticity of 2.01, sheet resistivity of 709 ohm/square, and transmittance of more than 90% were obtained. As a result, $SiO_2$ was coated on PET before deposition of ITO, their chromaticity($b^*$) and transmittance were better than previous results of ITO films. These results show that coating of $SiO_2$ induced arising chromaticity($b^*$) and transmittance. If the thickness of $SiO_2$ is controlled, sheet resistance value of ITO film will be expected to be better for touch screen. A four point probe and spectrophotometer are used to investigate the properties of ITO thin films.

• Journal of the Korean Vacuum Society
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• v.22 no.5
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• pp.245-249
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• 2013

The $HfO_X$ thin film was deposited what it has been paid attention to the next generation oxide thin layer of MOSFET (metal-Oxide semiconductor field-effect-transistor) by rf magnetron sputter on Si (100) substrate. The $HfO_X$ thin film was deposited using a various oxygen gas flows (5, 10, 15 sccm). After deposition, $HfO_X$ thin films were annealed from 400 to $800^{\circ}C$ for 20 min in nitrogen ambient. The electrical characteristics of the $HfO_X$ thin film was improved by leakage current properties, depending on the increase of oxygen gas flow and annealing temperature. In particular, the properties of nano-mechanics of $HfO_X$ thin films were measured by AFM and Nano-indenter. From the results, the maximum indentation depth at the basis of maximum indentation force was increased from 24.9 to 38.8 nm according to increase the annealing temperature. Especially, the indentation depth was increased rapidly at $800^{\circ}C$. The rapid increasement of indentation depth was expected to be due to the change of residual stress in the $HfO_X$ thin film, and this result was caused by relative flux of oxygen outgasing during the annealing process.

• Journal of the Korean Magnetics Society
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• v.15 no.2
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• pp.130-132
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• 2005

Tungsten carbon nitride (W-C-N) thin films were produced by reactive radio frequency (RF) magnetron sputter-ing of tungsten in $Ar-N_2$ gas mixture. The effects of the variation of nitrogen partial pressure on the composition, and structural properties of these films as well as the influence of post-deposition annealing have been studied. When $La_{0.67}Sr_{0.33}MnO_3$ was coated on the W-C-N/Si substrate, coercivity ($H_c$) and magnetization at room temperature shows 58.73 Oe, and 29.4 emu/cc, respectively. In order to improve the diffusion barrier characteristics, we have studied the impurity behaviors to control the ratios of nitrogen and carbon concentrations.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.78-79
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• 2008

In this paper, poly 3C-SiC thin films were grown on $SiO_2$/Si by atmospheric pressure chemical vapor deposition (APCVD) using HMDS, $H_2$, and Ar gas at $1100^{\circ}C$ for 30 min, respectively. And then, palladium films were deposited on poly 3C-SiC by RF magnetron sputter. Thickness, uniformity, and quality of these samples were performed by SEM. Crystallinity and preferred orientationsof palladium were analyzed by XRD. And Pd/poly 3C-SiC schottky diodes were fabricated and characterized by current-voltage measurements. Its electric current density Js and barrier height voltage were measured as $2\times10^{-3}$ A/$cm^2$, 0.58 eV, respectively. And these devices operated about $350^{\circ}C$. From results, Pd/poly 3C-SiC devices are promising for high temperature hydrogen sensor and applications.

• Korean Journal of Materials Research
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• v.9 no.1
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• pp.14-17
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• 1999

Tin oxide films as an anode layer for microbatteries were deposited by using rf magnetron sputtering. Characterization of the films was carried out in terms of working pressure in the range of 5~30 mtorr. Rf power and substrate temperature during deposition were fixed at 2.5W/$\textrm{cm}^2$ and A.T., respectively. The crystal orientation of $SnO_2$films was changed from (110) to (101) or (211) with the increasing working pressure. Refractive index and film density of the films also decreased with the increasing working pressure. The $SnO_2$ thin film formed under optimum conditions was found to have a reversible capacity of 446.9$\mu$Ah/$\textrm{cm}^2$-$\mu\textrm{m}$ and good reversibility when the working pressure was fixed at 10mtorr. As the working pressure decreased, film density increased. It was thought that the capacity of $SnO_2$films increased due to the increase in the amount of active materials which can react with Li electrochemically. Furthermore, cycle characteristics of the anode material was also influenced by film stress.