• Korean Chemical Engineering Research
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• v.48 no.4
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• pp.511-514
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• 2010

Perfluorinated polymer($Cytop^{TM}$) was deposited on selective area of AlGaN/GaN HEMT structure using low cost and simple spin-coating method, and the electrical characteristics of the device was analyzed for application of passivation layer on semiconductors. Gate lag measurement results of $Cytop^{TM}$ passivated and unpassivated HEMT were compared. Passivated device shows improved 65 % pulsed drain current of dc mode value. Rf measurements were also performed. $Cytop^{TM}$ passivated HEMT have similar rf performance to PECVD grown $Si_3N_4$ passivated device. $Cytop^{TM}$ passivation layer may play an important role in mitigating surface state trapping in the region between gate and drain.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.377-378
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• 2005

In this study, $SiO_2$ thin film was deposited on variable conditions of the RF power and working pressure by RF magnetron sputtering to apply to the Bragg reflector of the SMR type FBAR device. A crystal orientation and microstructure of $SiO_2$ thin film was studied by using the XRD, AFM and SEM. The best condition was obtained through analyzing the structural characteristics of thin film. Finally, FBAR device was fabricated with applying the best condition of $SiO_2$ thin film and the resonant characteristics was investigated by network analyzer to verify application possibility as a efficient device.

• Proceedings of the Korean Institute of Communication Sciences Conference
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• 2004.07a
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• pp.333-333
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• 2004

• International Journal of Contents
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• v.7 no.4
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• pp.50-55
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• 2011

To achieve efficient field formulations and fast numerical computations, the reciprocal relations and equivalence between tangential and normal boundary conditions for electromagnetic fields are discussed in terms of the Maxwell's differential equations. Using the equivalence of each boundary condition, we propose the six essential boundary conditions, which may be applicable to matching electromagnetic discontinuities to efficiently design RF devices. In order to verify our approach, the reflection characteristics of a rectangular waveguide step are compared with respect to six essential boundary conditions.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2001.11a
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• pp.124-128
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• 2001

We apply for the first time a low cost and loss wafer level packaging technology for RF-MEMS device. The proposed structure was simulated by finite element method (FEM) tool (HFSS of Ansoft). S-parameter measured of the package shows the return loss (S11) of 20dB and the insertion loss (S21) of 0.05dB.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2005.05a
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• pp.42-43
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• 2005

열악한 환경과 점검이 곤란한 장소에 설치되는 전자식안정기용 원격 감시와 제어 시스템을 RF를 사용하여 설계 제작하였다. 본 연구에서는 시제품을 개발하여, 안정되게 동작함을 확인하였다.

• Journal of Biomedical Engineering Research
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• v.8 no.1
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• pp.63-68
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• 1987

The biological effects for the use of hypertherinla to treat malignant tumors has been well studied and encouraging clinical results have been reported. However, the engineering and technical aspects of hyperthermia for the deepseated tumors has not been satisfactory. We have developed the FF capacitive hyperthermia device(GHT RF8)by cooporation with Yonsei Cancer Center and Green Cross Medical Equipment Corporation. It was composed with 8.10 MHz RF generator, capacitive electrode, matching system, cooling system, temperature measuring thermocouples and control PC computer. We have measured the temperature and thermal distribution in agar phantom, animals and human tumors.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.10 no.6
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• pp.927-934
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• 1999

A measuring system was integrated for the testing of live EED with continuous wave RF stimulus at low frequency range(1~250 MHz) and pulsed RF stimulus at high frequency range(8~10 GHz). The test system, set-up method and test procedure for the RF sensitivity of EED are described in this paper. The Bruceton method is applied to obtain distribution statistics such as mean firing level, standard deviation of the distribution and confidence levels for various applied firing signals.

• Proceedings of the IEEK Conference
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• 2006.06a
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• pp.583-584
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• 2006

This paper presents transistor matching in 70 nm nMOS. To adopt radio frequency(RF) applications, the RF performance, especially the current gain cutoff frequency($f_T$), is examined experimentally through a wafer. It is proved that the RF performance variation of 70 nm nMOS is dependent to the device geometry, the total width(W). The RF performance variation of 70 nm nMOS is inversely proportional to square root of total width(W). Also, decreasing of the number of fingers($N_f$) is helpful to decrease the variation of 70 nm nMOS.

• Electronics and Telecommunications Trends
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• v.34 no.6
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• pp.28-41
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• 2019

Future mobile services will require data transmission rates of 100 Gbps or higher due to the universalization of virtual and augmented reality devices. Therefore, THz technology, which uses an ultrahigh frequency band of 200 GHz or higher, is expected to be a candidate for such high-quality services. This article describes the current status of THz radio propagation characteristics, device and system developments, and network requirements to identify the overall trends in THz wireless communication technology.