• ETRI Journal
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• 제25권3호
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• pp.195-202
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• 2003

This paper proposes a new LDMOSFET structure with a trenched sinker for high-power RF amplifiers. Using a low-temperature, deep-trench technology, we succeeded in drastically shrinking the sinker area to one-third the size of the conventional diffusion-type structure. The RF performance of the proposed device with a channel width of 5 mm showed a small signal gain of 16.5 dB and a maximum peak power of 32 dBm with a power-added efficiency of 25% at 2 GHz. Furthermore, the trench sinker, which was applied to the guard ring to suppress coupling between inductors, showed an excellent blocking performance below -40 dB at a frequency of up to 20 GHz. These results confirm that the proposed trenched sinker should be an effective technology both as a compact sinker for RF power devices and as a guard ring against coupling.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.652-655
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• 2004

RF MEMS is a miniature device or an array of integration devices and mechanical components and fabricated with If batch-processing techniques. RF MEMS application area are in phased arrays and reconfigurable apertures for defence and telecommunication systems, switching network for satellite communication, and single-pole double throw switches for wireless application. Recently, RF MEMS switches have been developed for the application to the milimeter wave system. RF MEMS switches offer a substantilly higher performance than PM diode or FET switches. In this paper, SPDT(single-pole-double-throw) switch are designed to use 10 GHz. Actuation voltage and displacement are simulated by tool. And stress and distribution are simulated.

• 한국전자통신학회논문지
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• 제2권1호
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• pp.1-9
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• 2007

In this paper, a third-order harmonic mixer is designed using frequency multiplier theory for the Ka-band. The gate bias voltage is selected by frequency multiplier theory to maximize the third-order harmonic element ofthe fundamental LO frequency in the proposed mixer. The designed mixer has a gate mixer structure composed of a gate terminal input for the fundamental local signal ($f_{LO}$), RF signal (${RF}$) and a drain terminal output for the harmonic frequency ($3f_{LO}-f_{RF}$) respectively. The Ka-band harmonic mixer is designed and fabricated using a commercial GaAs MESFET device with a plastic package. The proposed mixer will provide a solution for the problems found in the high cost, complex circuitry in a conventional Ka-band mixer. The 33.5 GHz harmonic mixer has a -10 dB conversion gain by pumping 11.5 GHz LO with a +5 dBm level.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1995년도 추계학술대회 논문집
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• pp.85-88
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• 1995

In this report the large-signal RF performance of GaN MESFETs at different operating temperatures is investigated using a harmonic balance modeling technique. The predicted device performance calculated by the large-si anal model of a GaN FET is shown to be in good agreement with experimen tar data. It is demonstrated that the optimal RF performance of a GaN MESFET amplifier is achieved by balancing the input impedence for a optimized de sign. A GaN MESFET with the optimized design is predicted to produce maximum RF output power of about 4W/mm and 1W/mm at room temperature and 773 K, respectively. The device produces a peak Power-Added Efficiency (PAE) of 52% and 32% at the two temperatures.

• 한국철도학회:학술대회논문집
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• 한국철도학회 2004년도 춘계학술대회 논문집
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• pp.1471-1473
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• 2004

A portable train approaching warning device can be used in order to reduce accidents of the workers on the rail, who are working without recognizing the approaching train, and to secure the safety of the workers. It can be installed in the train so that workers can recognize the approaching train. However, it is not easy to identify the location of the train precisely. In this study GPS and RF devices, which are used to calculate the location of the train were reviewed, to see how much error tolerance they have in the field, to analyze the distance for normal transmission between the receiver and transmitter, to verify the conformity of the portable train approaching warning device developed as a prototype model to the current rail system, and to provide the related fields with the analysis results to improve the existing or application technology. Additionally, test methods to locate the train were introduced and each test result was compared and analyzed.

• 한국전자파학회:학술대회논문집
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• 한국전자파학회 2002년도 종합학술발표회 논문집 Vol.12 No.1
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• pp.182-185
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• 2002

A RE predistorted asymmetric Doherty amplifier for CDMA IS-95 signal has been fabricated using GaAs FETs. The Doherty amplifier used a Class AB main device and a Class C auxiliary device. At 6 ㏈ back-of from Pl ㏈ of 34 ㏈m, PAE of 27% was measured. This Doherty amplifier has higher PAE than Class AB for over 20 dB range of pout power. A RF predistortion linearizer is applied to the Doherty amplifier to improve the IMD cancellation performance. The 3rd order IMD cancellation of 12.2 ㏈ was achieved at output power of 18 ㏈m.

• 한국자기학회지
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• 제11권3호
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• pp.109-113
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• 2001

Presently, an inductor adapted at MMIC (Monolithic Microwave Integrated Circuit) which is used for cellular phone or PHS operates at quasi-microwave range over 800 MHz. However, a W-CDMA (Wideband Code Division Multiple Access) will use about 2 GHz range. Therefore magnetic film device should be compatible up to 2 GHz. We have deposited Co-Pd-Al-O system film using rf sputtering method which is expected up to 2 GHz, and investigated the effect of Pd content and magnetic field annealing. When Pd composition is 19%, Hk was 118 Oe, and ${\mu}$′showed flat frequency characteristics up to 1.5 GHz. The Q factor (=${\mu}$′/${\mu}$") was 23.3 at 1 GHz, 6.7 at 1.5 GHz and 1.5 at 2 GHz, respectively. Resonance frequency was 2 GHz. Therefore Co-Pd-Al-O thin film could be used at over 1 GHz, and also expected as an inductor material for wide band CDMA type cellular phone.

• 전기학회논문지
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• 제56권12호
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• pp.2217-2220
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• 2007

In this paper, we propose a new wafer level package (WLP) for the RF MEMS applications. The Film Bulk Acoustic Resonator (FBAR) are fabricated and hermetically packaged in a new wafer level packaging process. With the use of Au-Sn eutectic bonding method, we bonded glass cap and FBAR device wafer which has groove-shaped via formed in the backside. The device wafer includes a electrical bonding pad and groove-shaped via for connecting to the external bonding pad on the device wafer backside and a peripheral pad placed around the perimeter of the device for bonding the glass wafer and device wafer. The glass cap prevents the device from being exposed and ensures excellent mechanical and environmental protection. The frequency characteristics show that the change of bandwidth and frequency shift before and after bonding is less than 0.5 MHz. Two packaged devices, Tx and Rx filters, are attached to a printed circuit board, wire bonded, and encapsulated in plastic to form the duplexer. We have designed and built a low-cost, high performance, duplexer based on the FBARs and presented the results of performance and reliability test.

• 대한전자공학회논문지SD
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• 제47권8호
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• pp.36-46
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• 2010

본 논문은 수 GHz를 상회하는 동작 주파수를 갖는 RF집적회로와 고속 디지털 인터페이스를 위한 ESD 보호회로의 다양한 설계방법을 기술한다. 입/출력에 상당한 양의 기생 커패시턴스를 가지는 ESD 보호소자는 입/출력 임피던스 매칭에 영향을 주며, 이득, 잡음 등의 RF특성을 열화시킨다. 본 논문에서는 이와 같은 ESD 보호소자의 악영향에 대해 분석하고, 이를 감쇄시킬 수 있는 방안을 논한다. 또한 RF 특성과 ESD 내성 측정을 통해 RF/ESD 병합설계 방법을 기존의 RF ESD 보호소자의 설계방법과 비교, 분석한다.

• 한국표면공학회지
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• 제43권6호
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• pp.272-277
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• 2010

We investigated the life time characteristics of OLED device with aluminium oxide ($AlO_x$) passivation film on glass substrate and polyethylene terephthalate (PET) substrate by RF magnetron sputtering for the transparent barrier film applied to flexible OLED device. Basic buffer layer was determined as $Alq_3$(500 nm)-LiF(300 nm)-Al(1200 nm), and the most suitable aluminium oxide ($AlO_x$) film have been formed when the partial volume ratio of oxygen was 20% and the sputtering power was 100 watt and the minimum thickness of buffer was $2\;{\mu}m$. $AlO_x$/epoxy hybrid film was also used as a effective passivation layer for the purpose of improving life time characteristics of OLED devices with the glass substrate and the plastic substrate. Besides, the simultaneous deposition of $AlO_x$/epoxy film on back side of PET could result in better improvement of life time.