• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2007.10a
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• pp.204-207
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• 2007

Film bulk acoustic wave resonator (FBAR) technology has attracted a great attention as a promising technology to fabricate the next-generation RF filters mainly because the FBAR technology can be integrated with current Si processing. The RF filters are basically composed of several FBAR devices connected in parallel and in series, and their characteristics depend highly on the FBAR device characteristics. Thus, it is important to design high quality FBAR devices by device or process optimization. This kind of effort may enhance the FBAR device characteristics, eventually leading to FBAR filters of high performance. In this paper, we describe the methods to more effectively improve the resonance characteristics of the FBAR devices.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.5
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• pp.905-909
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• 2007

Crystalline and micro-structural characteristics of ZnO thin films which were deposited on p-Si(100) with cooling naturally down of pre-heated substrate during RF magnetron sputter deposition, were investigated by XRD and SEM in this paper. The film which was prepared on the substrate which was pre-heated to $400^{\circ}C$ before deposition and then cooled naturally down during deposition, showed the most outstanding c-axis preferred orientation. The ZnO thin film having the best crystalline result were applied to SMR type FBAR device and resonance properties of the device were investigated by network analyzer. It showed that resonance frequency was 2.05 GHz, return loss was -30.64 dB, quality factor was 3169 and electromechanical coupling factor was 0.4 %. This deposition method would be very useful for application of surface acoustic wave filter or film bulk acoustic wave resonator.

• Progress in Superconductivity and Cryogenics
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• v.16 no.4
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• pp.1-6
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• 2014

Superconducting quantum interference device (SQUID) is a sensitive detector of magnetic flux signals. Up to now, the main application of SQUIDs has been measurements of magnetic flux signals in the frequency range from near DC to several MHz. Recently, cryogenic low-noise radio-frequency (RF) amplifiers based on DC SQUID are under development aiming to detect RF signals with sensitivity approaching quantum limit. In this paper, we review the recent progress of cryogenic low-noise RF amplifiers based on SQUID technology.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.53 no.2
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• pp.73-78
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• 2004

AIN thin film has been deposited on the $AI_2$$O_3$substrate with reactive radio frequency( RF) magnetron sputtering method. In this work, elelctromechanical coupling coefficient of AIN thin film was increased with an increase of AIN thin film thickness, and the maximum value was 0.11%. Insertion loss of SAW device was decreased with an increase of AIN thin film thickness and the minimum value was 33［㏈］. SAW velocity of IDTs/AIN/$AI_2$$O_3$structure and IDTs/AIN/$AI_2$$O_3$/Si structure were about 5480［㎧］and 5040［㎧］respectively.

• Journal of Advanced Navigation Technology
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• v.13 no.4
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• pp.503-508
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• 2009

In this paper, we have designed the auxiliary input device which based on hand-motion recognition. It is aimed at some individually specified person such as the disabled, rehabilitation patient, and the aged. The gyro sensor is used to recognize the hand-motion in 3D space, and communication bandwidth for transceiver is also set to the 2.4GHz. Prototype board includes a set of modules; Gyro sensor, RF transmitter/receiver, MCU for signal processing and USB connector etc. Some experiments are conducted so as to verify the prototype, and as a result, mouse-based curser motion as well as program control are well operated just same as the design specification.

• Proceedings of the KIEE Conference
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• 2005.07c
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• pp.1992-1994
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• 2005

In this study, Bragg reflector was formed as tungsten(W) and $SiO_2$ deposited by RF magnetron sputtering according to variable conditions of RF power and working pressure to apply to the SMR type FBAR device, one of the next generation mobile communication devices. The micro-structural properties such as a crystal orientation, roughness and micro- structure were measured by XRD, AFM and SEM and the best condition of Bragg reflector was elicited with analyzing that results of the thin films about each conditions. Finally, FBAR device was fabricated with applying the Bragg reflector was formed on the best condition and measured the resonance properties and compared other research and considered it.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.46 no.1
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• pp.49-54
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• 2009

This paper proposes a new approach to provide RF communication channel and electric power transmission to overcome the weakness of conventional tests, which may cause several problems. When an RF communication device is used to communicate between launch vehicle and launch complex in stead of using harness umbilical, it may draw the simplicity of ground test equipments, cost-saving, and the reduction of test time. In addition, if an RF power transmission device is adopted to supply on-board power of launch vehicle, it can replace expensive on-board batteries, which may be degraded easily by the repeated charging and discharging processes.

• Progress in Superconductivity and Cryogenics
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• v.21 no.1
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• pp.10-14
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• 2019

Radio-frequency (RF) amplifiers based on direct current (DC) superconducting quantum interference device (SQUID) have low-noise performance for precision physics experiments. Gain curves of SQUID RF amplifiers depend on several parameters of the SQUID and operation conditions. We are developing SQUID RF amplifiers for application to measure very weak RF signals from ultra-low-temperature high-magnetic-field microwave cavity in axion search experiments. In this study, we designed, fabricated and characterized SQUID RF amplifiers with different SQUID parameters, such as number of input coil turn, shunt resistance value of the junction and coupling capacitance in the input coil, and compared the results.

• Transactions of the Korean Society for Noise and Vibration Engineering
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• v.21 no.3
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• pp.206-211
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• 2011

In this paper, we report a high-precision wireless gap sensor based on a surface acoustic wave (SAW) device. The sensing element is a parallel-plate capacitor whose dimensions are $3{\times}3\;mm^2$, and is attached to the SAW device as an external load. The SAW device, equipped with an RF antenna, serves simultaneously as a signal conditioner and an RF transponder. The center frequency of the SAW device is 450 MHz. The wireless gap sensor prototype exhibits a resolution of 100 nm and a sensing range of $50{\mu}m$. The proposed sensor system can be used for remote, high-precision gap measurement in hard-to-reach environments.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05c
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• pp.170-173
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• 2003

In this paper, we proposed a new bulk LDMOS structure which can be used for RF application, and its fabrication steps were introduced. The simulated devices consist of three types: Bulk device, SLB(SOI Like Bulk), and SOI device. As a result of process and device simulation, we showed electrical characteristics, such as threshold voltage, subthreshold slope, DIBL(Drain Induced Barrier Lowering), off-state current, and breakdown voltage. In this simulation study, the lattice temperature model was adopted to see the device characteristics with lattice temperature during the operation. SLB device structure showed the best breakdown characteristics among the other structures. The breakdown voltage of SLB structure is about 9V, that of bulk is 7V, and that of SOI is 8V.