• Journal of Korea Multimedia Society
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• v.10 no.4
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• pp.548-558
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• 2007

This paper presents a method of location sensing of mobile objects using RF devices. By analyzing signal strengths between a certain number of fixed RF devices and a moving RF device, we can recognize the location of a moving object in real time. Firstly, signal strength values between RF devices are gathered, and then the values are normalized and constructed as a model feature vector for specific location. A number of model patterns are acquired and registered for all of the location which we want to recognize. For location sensing, signal strength information for an arbitrary moving RF device is acquired and compared with model feature vectors registered previously. In this case, distance value is calculated and the moving RF device is classified as one of the known model patterns. Experimental results show that our methods have performed the location sensing successfully with 100% rate of recognition when the number of fixed RF devices is 10 or more than 12. In terms of cost and applicability, experimental results seem to be very encouraging.

• ETRI Journal
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• v.25 no.3
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• pp.203-209
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• 2003

This paper reports on our investigation of DC and RF characteristics of p-channel metal oxide semiconductor field effect transistors (pMOSFETs) with a compressively strained $Si_{0.8}Ge_{0.2}$ channel. Because of enhanced hole mobility in the $Si_{0.8}Ge_{0.2}$ buried layer, the $Si_{0.8}Ge_{0.2}$ pMOSFET showed improved DC and RF characteristics. We demonstrate that the 1/f noise in the $Si_{0.8}Ge_{0.2}$ pMOSFET was much lower than that in the all-Si counterpart, regardless of gate-oxide degradation by electrical stress. These results suggest that the $Si_{0.8}Ge_{0.2}$ pMOSFET is suitable for RF applications that require high speed and low 1/f noise.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.26 no.1
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• pp.16-23
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• 2015

In this paper, a bent microstrip patch antenna, which is suitable for band-type wearable devices and RF configuration, to be used in the WCDMA2100 mobile network is proposed. The proposed antenna using RF configuration which is consisted of separated Tx and Rx frequency band is designed to operate or function in WCDMA2100 Tx frequency band only and it is not strongly affected by the human body because of the conductor at the bottom side. At both flat case and bent case, the proposed antenna's maximum gain satisfies at least 5.3 dBi, and its -6 dB return loss bandwidth is wider than 20 MHz. The simulated surface absorption rate($SAR_{1g}$) result is under 0.7 [W/kg]. The proposed antenna suits in band-type wearable devices which is worn on wrists or arms.

• JSTS:Journal of Semiconductor Technology and Science
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• v.4 no.2
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• pp.83-87
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• 2004

Phase noise performance and current consumption of Radio Frequency (RF) Voltage-Controlled Oscillator (VCO) are largely dependent on the Quality (Q) factor of inductor-capacitor (LC) tank. Because the Q-factor of LC tank is determined by on-chip spiral inductor, we designed, analyzed, and modeled on-chip differential inductor to enhance differential Q-factor, reduce current consumption and save silicon area. The simulated inductance is 3.3 nH and Q-factor is 15 at 2 GHz. Self-resonance frequency is as high as 13 GHz. To verify its use to RF applications, we designed 2 GHz differential LC VCO. The measurement result of phase noise is -112 dBc/Hz at an offset frequency of 100 kHz from a 2GHz carrier frequency. Tuning range is about 500 MHz (25%), and current consumption varies from 5mA to 8.4 mA using bias control technique. Implemented in $0.35-{\mu}m$ SiGe BiCMOS technology, the VCO occupies $400\;um{\times}800\;um$ of silicon area.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.2
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• pp.99-104
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• 2020

In this study, we fabricated a metamorphic high-electron-mobility transistor (mHEMT) device with a T-type gate structure for the implementation of W-band monolithic microwave integrated circuits (MMICs) and investigated its characteristics. To fabricate the mHEMT device, a recess process for etching of its Schottky layer was applied before gate metal deposition, and an e-beam lithography using a triple photoresist film for the T-gate structure was employed. We measured DC and RF characteristics of the fabricated device to verify the characteristics that can be used in W-band MMIC design. The mHEMT device exhibited DC characteristics such as a drain current density of 747 mA/mm, maximum transconductance of 1.354 S/mm, and pinch-off voltage of -0.42 V. Concerning the frequency characteristics, the device showed a cutoff frequency of 215 GHz and maximum oscillation frequency of 260 GHz, which provide sufficient performance for W-band MMIC design and fabrication. In addition, active and passive modeling was performed and its accuracy was evaluated by comparing the measured results. The developed mHEMT and device models could be used for the fabrication of W-band MMICs.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.11 no.11
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• pp.2090-2094
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• 2007

Film bulk acoustic wave resonator(FBAR) technology has attracted a great attention as a promising technology to fabricate the next-generation RF filters mainly because the FBAR technology can be integrated with current Si processing. The RF filters are basically composed of several FBAR devices connected in parallel and in series, and their characteristics depend highly on the FBAR device characteristics. Thus, it is important to design high quality FBAR devices by device or process optimization. This kind of effort may enhance the FBAR device characteristics, eventually leading to FBAR filters of high performance. In this paper, we describe the methods to more effectively improve the resonance characteristics of the FBAR devices.

• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.3
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• pp.401-410
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• 2017

In this work, we show that the excessive lattice heating problem due to parasitic pnp transistor action in the diode electrostatic discharge (ESD) protection device in the diode input protection circuit, which is favorably used in CMOS RF ICs, can be solved by adopting a symmetrical cathode structure. To explain how the recipe works, we construct an equivalent circuit for input human-body model (HBM) test environment of a CMOS chip equipped with the diode protection circuit, and execute mixed-mode transient simulations utilizing a 2-dimensional device simulator. We attempt an in-depth comparison study by varying device structures to suggest valuable design guidelines in designing the protection diodes connected to the $V_{DD}$ and $V_{SS}$ buses. Even though this work is based on mixed-mode simulations utilizing device and circuit simulators, the analysis given in this work clearly explain the mechanism involved, which cannot be done by measurements.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.859-862
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• 2003

Well-aligned multiwall carbon nanotubes (MWCNTs) were prepared at low temperature of 400 $^{\circ}C$ by utilizing a radio frequency plasma-enhanced chemical vapor deposition (rf-PECVD) system. The MWCNTs were treated by an external rf plasma source and an ultra-violet laser in order to modify structural defect of carbon nanotube and to ablate possible contamination on carbon nanotube surface. Structural properties of carbon nanotubes were investigated by using a scanning electron microscopy (SEM), Raman spectroscopy, Fourier transformer Infrared spectroscopy (FTIR) and transmission electron microscope (TEM). In addition, the emission properties of the MWNTs were measured for the application of field emission display (FED) in near future. Various post treatments were found to improve the field emission property of carbon nanotubes.

• International Journal of Railway
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• v.3 no.2
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• pp.39-45
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• 2010

The RF-CBTC (Radio Frequency-Communication Based Train Control) System is a communication system in railroad systems. The communication method of RF-CBTC system is the wireless between the wayside device and on-board device. The wayside device collects its location and speed from each train and transmits the distance from the forwarding train to the speed-limit position to it. The on-board device controlling device controls the speed optimum for the train. In the case of the RF-CBTC system used in Korea, transmission frequency is 2.4 [GHz]. It is the range of ISM(Industrial Scientific and Medical equipment) band and transmission of voice and data is performed by CDMA (Code Division Multiple Access) method. So noises are made in the AWGN (Additive White Gaussian Noise) and fading environment. Currently, the SNR (Signal to Noise Ratio) is about 20 [dB], so due to bit errors made by noises, transmission of reliable information to the train is not easy. Also, in the case that two tracks are put to a single direction, it is needed that two trains transmit reliable voice and data to a wayside device. But, by noises, it is not easy that just a train transmits reliable information. In this paper, we estimated the BER (Bit Error Rate) related to the SNR of voice and data transmission in the environment such as AWGN and fading from the RF-CBTC system using the CDMA method. Also, we supposed the SNR which is required to meet the BER standard for voice and data transmission. By increasing the processing gain that is a ratio of chip transmission to voice and data transmission, we made possible voice and data transmission from maximally two trains to a wayside device, and demonstrated it by using Matlab program.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2002.05a
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• pp.288-292
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• 2002

We propose the new type of on-chip ESD protection method for RF applications. By using the properties of RF circuits, we can use the short-circuited stub as ESD protection device in front of the DC blocking capacitor Specially, we can use short-circuited stub as the portion of the matching circuit so to reduce the and various parameters of the transmission line. This new type ESD protection method is very different from the conventional ESD protection method. With the new type ESD protection method, we remove the parasitic capacitance of ESD protection device which degrade the performance of core circuit.