• Korean Chemical Engineering Research
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• 제48권4호
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• pp.511-514
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• 2010

불소계 고분자 물질인 $Cytop^{TM}$ 박막을 간단하고 경제적인 스핀코팅 방법을 이용하여 반도체 표면에 선택적으로 형성시킨 후, AlGaN/GaN HEMT 소자의 반도체 보호막(passivation layer)으로써 활용가능성을 고찰하기 위하여 전기적 특성이 분석되었다. $Cytop^{TM}$ 보호막이 적용된 AlGaN/GaN HEMT 소자와 적용되지 않은 소자의 게이트 래그 특성이 비교되었다. 보호막이 적용된 소자는 dc 대비 65%의 향상된 펄스 드레인 전류를 보였다. HEMT 소자의 rf 특성이 측정되었으며, $Cytop^{TM}$ 박막이 적용된 소자는 PECVE $Si_3N_4$ 보호막이 적용된 소자와 유사한 소자 특성을 나타냈다. 이는 게이트와 드레인 사이에 존재하는 표면상태 트랩의 보호막에 의한 감소에 의한 것으로 판단된다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.377-378
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• 2005

In this study, $SiO_2$ thin film was deposited on variable conditions of the RF power and working pressure by RF magnetron sputtering to apply to the Bragg reflector of the SMR type FBAR device. A crystal orientation and microstructure of $SiO_2$ thin film was studied by using the XRD, AFM and SEM. The best condition was obtained through analyzing the structural characteristics of thin film. Finally, FBAR device was fabricated with applying the best condition of $SiO_2$ thin film and the resonant characteristics was investigated by network analyzer to verify application possibility as a efficient device.

• 한국통신학회:학술대회논문집
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• 한국통신학회 2004년도 하계종합학술발표회논문초록집
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• pp.333-333
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• 2004

• International Journal of Contents
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• 제7권4호
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• pp.50-55
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• 2011

To achieve efficient field formulations and fast numerical computations, the reciprocal relations and equivalence between tangential and normal boundary conditions for electromagnetic fields are discussed in terms of the Maxwell's differential equations. Using the equivalence of each boundary condition, we propose the six essential boundary conditions, which may be applicable to matching electromagnetic discontinuities to efficiently design RF devices. In order to verify our approach, the reflection characteristics of a rectangular waveguide step are compared with respect to six essential boundary conditions.

• 한국마이크로전자및패키징학회:학술대회논문집
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• 한국마이크로전자및패키징학회 2001년도 추계 기술심포지움
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• pp.124-128
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• 2001

We apply for the first time a low cost and loss wafer level packaging technology for RF-MEMS device. The proposed structure was simulated by finite element method (FEM) tool (HFSS of Ansoft). S-parameter measured of the package shows the return loss (S11) of 20dB and the insertion loss (S21) of 0.05dB.

• 한국조명전기설비학회:학술대회논문집
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• 한국조명전기설비학회 2005년도 춘계학술대회논문집
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• pp.42-43
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• 2005

열악한 환경과 점검이 곤란한 장소에 설치되는 전자식안정기용 원격 감시와 제어 시스템을 RF를 사용하여 설계 제작하였다. 본 연구에서는 시제품을 개발하여, 안정되게 동작함을 확인하였다.

• 대한의용생체공학회:의공학회지
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• 제8권1호
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• pp.63-68
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• 1987

The biological effects for the use of hypertherinla to treat malignant tumors has been well studied and encouraging clinical results have been reported. However, the engineering and technical aspects of hyperthermia for the deepseated tumors has not been satisfactory. We have developed the FF capacitive hyperthermia device(GHT RF8)by cooporation with Yonsei Cancer Center and Green Cross Medical Equipment Corporation. It was composed with 8.10 MHz RF generator, capacitive electrode, matching system, cooling system, temperature measuring thermocouples and control PC computer. We have measured the temperature and thermal distribution in agar phantom, animals and human tumors.

• 한국전자파학회논문지
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• 제10권6호
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• pp.927-934
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• 1999

본 논문은 확약이 장착된 EED의 RF 민감도 특성분석을 위해 저주파수대역(1~250MHz)과 고주파수 대역(8~10GHz)에서 운용할 수 있는 측정시스템을 구성하고 각 시스템에 대한 시험절차를 제시하였다. 저주파수대역에서 여러 단계의 기폭신호를 인가하면서 EED의 기폭 특성을 측정하였고, Bruceton분석기법을 도입하여 EED의 평균 기폭레벨, 표준편차 및 신뢰도 레밸을 계산하였다.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2006년도 하계종합학술대회
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• pp.583-584
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• 2006

This paper presents transistor matching in 70 nm nMOS. To adopt radio frequency(RF) applications, the RF performance, especially the current gain cutoff frequency($f_T$), is examined experimentally through a wafer. It is proved that the RF performance variation of 70 nm nMOS is dependent to the device geometry, the total width(W). The RF performance variation of 70 nm nMOS is inversely proportional to square root of total width(W). Also, decreasing of the number of fingers($N_f$) is helpful to decrease the variation of 70 nm nMOS.

• 전자통신동향분석
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• 제34권6호
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• pp.28-41
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• 2019

Future mobile services will require data transmission rates of 100 Gbps or higher due to the universalization of virtual and augmented reality devices. Therefore, THz technology, which uses an ultrahigh frequency band of 200 GHz or higher, is expected to be a candidate for such high-quality services. This article describes the current status of THz radio propagation characteristics, device and system developments, and network requirements to identify the overall trends in THz wireless communication technology.