• 한국멀티미디어학회논문지
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• 제10권4호
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• pp.548-558
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• 2007

본 논문에서는 RF 단말의 신호를 분석하여 이동체 위치를 인식하기 위한 방법에 대하여 제안한다. 고정되어 있는 여러 개의 RF 단말과 이동 RF 단말 간의 신호를 분석함으로써 이동 RF 단말의 위치를 실시간으로 인식한다. 이를 위하여 고정되어 있는 n 개의 RF 단말과 특정 위치에 있는 이동 RF 단말 간의 신호 세기 데이터를 획득하여 특징 벡터를 구한 후 모형으로 저장한다. 인식하고자 하는 모든 위치에 대하여 이러한 특징 벡터를 구함으로써 학습이 완료된다. 임의의 위치에 이동 단말이 있을 경우 고정되어 있는 단말 간의 신호 정보를 구하고 이를 사전에 등록한 모형과 비교함으로써 위치를 인식할 수 있다. 실제 주차장에서 위치인식 실험을 한 결과 고정 노드의 수가 10개 이상일 경우 100%의 인식률을 얻을 수 있었다. 본 연구에서 제안하는 방법은 네트워크 인프라가 필요하지 않음은 물론 RF 단말의 가격이 저렴하기 때문에 비용 및 성능측면에서 효과적으로 시스템을 구축할 수 있다.

• ETRI Journal
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• 제25권3호
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• pp.203-209
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• 2003

This paper reports on our investigation of DC and RF characteristics of p-channel metal oxide semiconductor field effect transistors (pMOSFETs) with a compressively strained $Si_{0.8}Ge_{0.2}$ channel. Because of enhanced hole mobility in the $Si_{0.8}Ge_{0.2}$ buried layer, the $Si_{0.8}Ge_{0.2}$ pMOSFET showed improved DC and RF characteristics. We demonstrate that the 1/f noise in the $Si_{0.8}Ge_{0.2}$ pMOSFET was much lower than that in the all-Si counterpart, regardless of gate-oxide degradation by electrical stress. These results suggest that the $Si_{0.8}Ge_{0.2}$ pMOSFET is suitable for RF applications that require high speed and low 1/f noise.

• 한국전자파학회논문지
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• 제26권1호
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• pp.16-23
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• 2015

본 논문에서는 WCDMA2100 이동통신망을 사용하는 밴드형 wearable device에 적합한 bent 마이크로스트립 패치 안테나와 이를 적용하기 위한 RF configuration을 제안하였다. 제안된 안테나는 WCDMA2100 송수신 주파수 대역을 분리한 RF configuration을 사용하여 WCDMA 송신대역에서만 동작하도록 설계되었고, 후면의 도체(ground)로 인해 인체의 영향을 적게 받는다. 제안된 안테나는 flat 및 bent할 경우 모두 최대 이득은 5.3 dBi 이상, -6 dB 반사손실 대역폭은 20 MHz 이상을 가지고 전자파 인체 흡수율 시뮬레이션 $SAR_{1g}$ 0.7 [W/kg] 이하를 갖는다. 제안된 안테나는 사람의 손목이나 팔에 착용하는 밴드형 wearable device에 적합하게 사용될 수 있다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제4권2호
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• pp.83-87
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• 2004

Phase noise performance and current consumption of Radio Frequency (RF) Voltage-Controlled Oscillator (VCO) are largely dependent on the Quality (Q) factor of inductor-capacitor (LC) tank. Because the Q-factor of LC tank is determined by on-chip spiral inductor, we designed, analyzed, and modeled on-chip differential inductor to enhance differential Q-factor, reduce current consumption and save silicon area. The simulated inductance is 3.3 nH and Q-factor is 15 at 2 GHz. Self-resonance frequency is as high as 13 GHz. To verify its use to RF applications, we designed 2 GHz differential LC VCO. The measurement result of phase noise is -112 dBc/Hz at an offset frequency of 100 kHz from a 2GHz carrier frequency. Tuning range is about 500 MHz (25%), and current consumption varies from 5mA to 8.4 mA using bias control technique. Implemented in $0.35-{\mu}m$ SiGe BiCMOS technology, the VCO occupies $400\;um{\times}800\;um$ of silicon area.

• 한국전기전자재료학회논문지
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• 제33권2호
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• pp.99-104
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• 2020

In this study, we fabricated a metamorphic high-electron-mobility transistor (mHEMT) device with a T-type gate structure for the implementation of W-band monolithic microwave integrated circuits (MMICs) and investigated its characteristics. To fabricate the mHEMT device, a recess process for etching of its Schottky layer was applied before gate metal deposition, and an e-beam lithography using a triple photoresist film for the T-gate structure was employed. We measured DC and RF characteristics of the fabricated device to verify the characteristics that can be used in W-band MMIC design. The mHEMT device exhibited DC characteristics such as a drain current density of 747 mA/mm, maximum transconductance of 1.354 S/mm, and pinch-off voltage of -0.42 V. Concerning the frequency characteristics, the device showed a cutoff frequency of 215 GHz and maximum oscillation frequency of 260 GHz, which provide sufficient performance for W-band MMIC design and fabrication. In addition, active and passive modeling was performed and its accuracy was evaluated by comparing the measured results. The developed mHEMT and device models could be used for the fabrication of W-band MMICs.

• 한국정보통신학회논문지
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• 제11권11호
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• pp.2090-2094
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• 2007

박막음향공진기(FBAR) 기술은 현재의 실리콘 공정기술과 높은 집적화 가능성으로 인하여 차세대 RF 필터를 제작할 수 있는 매우 희망적인 기술로 최근에 큰 관심을 불러 일으켜 왔다. RF 필터는 기본적으로 여러 개의 FBAR 소자들을 직렬과 병렬로 연결된 형태로 구성되므로 그 필터의 특성은 각각의 FBAR 소자의 특성에 크게 의존하게 된다. 따라서 우수한 품질의 FBAR 소자를 제작하기 위해서는 우선적으로 소자 및 공정의 최적화 설계가 중요한다. 이러한 최적화 설계는 FBAR 소자 특성을 크게 향상 시킬 수 있게 되고, 궁극적으로 우수한 성능을 가진 FBAR 필터의 구현으로 이어지게 된다. 본 논문에서는, 이러한 FBAR 소자의 공진특성을 더욱 효과적으로 향상시킬 수 있는 방법들에 관한 연구결과를 고찰하고 논의한다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제17권3호
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• pp.401-410
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• 2017

In this work, we show that the excessive lattice heating problem due to parasitic pnp transistor action in the diode electrostatic discharge (ESD) protection device in the diode input protection circuit, which is favorably used in CMOS RF ICs, can be solved by adopting a symmetrical cathode structure. To explain how the recipe works, we construct an equivalent circuit for input human-body model (HBM) test environment of a CMOS chip equipped with the diode protection circuit, and execute mixed-mode transient simulations utilizing a 2-dimensional device simulator. We attempt an in-depth comparison study by varying device structures to suggest valuable design guidelines in designing the protection diodes connected to the $V_{DD}$ and $V_{SS}$ buses. Even though this work is based on mixed-mode simulations utilizing device and circuit simulators, the analysis given in this work clearly explain the mechanism involved, which cannot be done by measurements.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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• pp.859-862
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• 2003

Well-aligned multiwall carbon nanotubes (MWCNTs) were prepared at low temperature of 400 $^{\circ}C$ by utilizing a radio frequency plasma-enhanced chemical vapor deposition (rf-PECVD) system. The MWCNTs were treated by an external rf plasma source and an ultra-violet laser in order to modify structural defect of carbon nanotube and to ablate possible contamination on carbon nanotube surface. Structural properties of carbon nanotubes were investigated by using a scanning electron microscopy (SEM), Raman spectroscopy, Fourier transformer Infrared spectroscopy (FTIR) and transmission electron microscope (TEM). In addition, the emission properties of the MWNTs were measured for the application of field emission display (FED) in near future. Various post treatments were found to improve the field emission property of carbon nanotubes.

• International Journal of Railway
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• 제3권2호
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• pp.39-45
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• 2010

The RF-CBTC (Radio Frequency-Communication Based Train Control) System is a communication system in railroad systems. The communication method of RF-CBTC system is the wireless between the wayside device and on-board device. The wayside device collects its location and speed from each train and transmits the distance from the forwarding train to the speed-limit position to it. The on-board device controlling device controls the speed optimum for the train. In the case of the RF-CBTC system used in Korea, transmission frequency is 2.4 [GHz]. It is the range of ISM(Industrial Scientific and Medical equipment) band and transmission of voice and data is performed by CDMA (Code Division Multiple Access) method. So noises are made in the AWGN (Additive White Gaussian Noise) and fading environment. Currently, the SNR (Signal to Noise Ratio) is about 20 [dB], so due to bit errors made by noises, transmission of reliable information to the train is not easy. Also, in the case that two tracks are put to a single direction, it is needed that two trains transmit reliable voice and data to a wayside device. But, by noises, it is not easy that just a train transmits reliable information. In this paper, we estimated the BER (Bit Error Rate) related to the SNR of voice and data transmission in the environment such as AWGN and fading from the RF-CBTC system using the CDMA method. Also, we supposed the SNR which is required to meet the BER standard for voice and data transmission. By increasing the processing gain that is a ratio of chip transmission to voice and data transmission, we made possible voice and data transmission from maximally two trains to a wayside device, and demonstrated it by using Matlab program.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2002년도 춘계종합학술대회
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• pp.288-292
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• 2002

RF 회로에 적합한 새로운 형태의 on-chip ESD protection 방법을 제시하였다. RF 회로의 특성을 이용하여 DC blocking capacitor 앞에 short-circuited stub를 달아서 ESD 소자로 활용하였다. 특히 short-circuited stub를 매칭 회로의 일부로 사용하여 stub의 길이를 줄일 수 있다. 또한 short-circuited stub의 width와 metal의 성분으로 ESD threshold voltage를 쉽게 예측 가능하다. 기존의 ESD 방지 회로와 달리 RF 회로를 위한 ESD 방지 회로에서 문제시되던 기생 capacitance 성분에 대한 문제점을 해결 할 수 있었다.