• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2000년도 추계종합학술대회 논문집(2)
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• pp.9-12
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• 2000

InP/lnGaAs heterojunciton phototransistors (HPTs) with transparent emitter contacts were fabricated and characterized. Indium Tin Oxide was RF sputtered for the emitter contacts. By comparison with InP/InGaAs HBTs, the dc characteristics of InP/lnGaAs HPTs demonstrated offset voltage due to ITO emitter contacts and similar common emitter current gain. The model parameters were extracted and a simple SPICE simulations were performed.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2001년도 하계종합학술대회 논문집(2)
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• pp.205-208
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• 2001

Schottky barrier diodes are fabricated on a intrinsic GaN(4${\mu}{\textrm}{m}$) epitaxial structure grown by rf plasma molecular beam epitaxy (MBE) on sapphire substrates. First, We make Ohmic electrodes (Ti/Al/Ti/Au) by evaporator. Next, we contact RuO$_2$ by dipping in the solution (RuCl$_3$.HClO$_4$), and then we deposit Ni/Au on the surface of RuO$_2$ by evaporator. We study the electrical characteristics of GaN Schottky barrier diodes made by these methods. Measurements are C-V, I-V, SEM, EDX, and XRD for the characteristics of devices. Thickness of RuO$_2$ layer depends on supplied voltage and dipping time. Device of thinner RuO$_2$ layer have a good Schottky characteristics compare with device of thicker RuO$_2$ layer

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2003년도 하계종합학술대회 논문집 I
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• pp.557-560
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• 2003

The increase of vehicles stagnations leads to the increasing attention to the way customers pay and a large number of projects on electronic cash system. Tranport system is comprised of a number of advanced technologies, including information processing, communications, control, and electronics. Recently many research on a system which provides contact in order to protect driver's vehicle passage have been carried out. And some potential problems from that system are being reviewed by electronic cash system. In this papers, we suggest RF protocol developing technology using the concept of electronic cash. ATM electronic cash developing is consist of component of pre-developed coin throw, integration of component using its, and production of more requirement-satisfactory ITS solution. Result increase 15~40% pre-type vehicles stagnations. Especially, we expect this proposed concept would be well adapted to our national environments.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2002년도 하계종합학술대회 논문집(5)
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• pp.161-164
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• 2002

The increase of vehicles stagnations leads to the increasing attention to the way customers pay and a large number of projects on electronic cash system. Transport system is comprised of a number of advanced technologies, including information processing, communications, control, and electronics. Recently many research on a system which provides contact in order to protect driver's vehicle passage have been carried out. And some potential problems from that system are being reviewed by electronic cash system. In this papers, we suggest RF protocol developing technology using the concept of electronic cash. ATM electronic cash developing is consist of component of pre-developed coin throw, integration of component using its, and production of more requirement-satisfactory ITS solution. Result increase 15∼40% pre-type vehicles stagnations. Especially, we expect this proposed concept would be well adapted to our national environments.

• Transactions on Electrical and Electronic Materials
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• 제8권5호
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• pp.211-214
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• 2007

Chemical and morphological changes of phenol formaldehyde-based photoresist after $O_2$ radiofrequency(RF) plasma treatment depending on exposure time and source power were investigated. It was found that etch rate of photoresist sharply increased after discharge turn on and reached a limit with increase in plasma exposure time. Contact angle measurements and X-ray photoelectron spectroscopy(XPS) analysis showed that the surface chemical structure become nearly constant after 15 sec of the treatment. Atomic force microprobe(AFM) measurements were shown that surface roughness was increased with plasma exposure time.

• 대한기계학회논문집A
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• 제27권11호
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• pp.1881-1888
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• 2003

This study show a numerical method to predict roll wear in the roll forming process. Archard's wear model was reformulated in an elemental form to predict volume of roll wear and then wear depth on the roll was calculated using the results of finite element analysis. Abrasive wear occurs at contact area in the roll forming process and the results of simulation are compared with experimental data in production line. The wear simulation approach with 3-D FEM program for roll forming process, SHAPE-RF is in good agreement with it in tendency.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.I
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• pp.378-380
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• 2005

Diamond like carbon (DLC) films are known that they show homogeneous alignment property when they are irradiated by Ar ion beam. The DLC films in most of studies were deposited by CVD and contain large mount of hydrogen. In order to identity the hydrogen effect on alignment property, DLC films is deposited by RF magnetron sputter using various ratio of Ar and H2 as reactive gas. DLC films are characterized by FT-IR, Raman and contact angle. Alignment property is estimated by measuring pretilt angle.

• 한국전기전자재료학회논문지
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• 제27권2호
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• pp.71-75
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• 2014

To observe the optical characteristic of oxide semiconductor depending on the degree of bonding structures, SiOC, ZnO and IGZO were prepared by the RF magnetron sputter system and chemical vapor deposition. Generally, crystal ZnO, amorphous SiOC and IGZO changed the optical characteristics in according to the electro-chemical behavior due to the oxygen vacancy at an interface between different groups. Transmittance of SiOC and IGZO with amorphous structures was higher than that of ZnO with crystal structure, because of lowering the carrier concentration due to the recombination of electron and holes carriers as oxygen vacancies. Besides, the energy gap of amorphous SiOC and IGZO was higher than the energy gap of crystal ZnO. The diffusion mobility of holes is higher than the drift mobility of electrons.

• E2M - 전기 전자와 첨단 소재
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• 제10권6호
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• pp.570-575
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• 1997

In this days, the thinner film of dielectric materials is required while its capacitance is required to be still large at the VLSI process. Most of such VLSI have MOS structures. For the research on this requirement, MOS capacitors were fabricated on the silicon wafer in four different thickness groups by RF sputtering method. SiO of the SiO/TiN film is used as the insulating layer and TiN is chosen as the barrier against the diffusion of Al which is the terminal connected by ohmic contact because TiN has the advantageous properties such as good thermal stability and very low diffusion rate in spite of its relatively low specific resistance. In this study their electrical and optical characteristics are investigated to find refractive index, absorption coefficient and Permittivity.

• 한국재료학회지
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• 제20권4호
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• pp.175-180
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• 2010

Transparent conducting oxide (TCO) films are widely used for optoelectronic applications. Among TCO materials, zinc oxide (ZnO) has been studied extensively for its high optical transmission and electrical conduction. In this study, the effects of $O_2$ plasma pretreatment on the properties of Ga-doped ZnO films (GZO) on polyethylene naphthalate (PEN) substrate were studied. The $O_2$ plasma pretreatment process was used instead of conventional oxide buffer layers. The $O_2$ plasma treatment process has several merits compared with the oxide buffer layer treatment, especially on a mass production scale. In this process, an additional sputtering system for oxide composition is not needed and the plasma treatment process is easily adopted as an in-line process. GZO films were fabricated by RF magnetron sputtering process. To improve surface energy and adhesion between the PEN substrate and the GZO film, the $O_2$ plasma pre-treatment process was used prior to GZO sputtering. As the RF power and the treatment time increased, the contact angle decreased and the RMS surface roughness increased significantly. It is believed that the surface energy and adhesive force of the polymer surfaces increased with the $O_2$ plasma treatment and that the crystallinity and grain size of the GZO films increased. When the RF power was 100W and the treatment time was 120 sec in the $O_2$ plasma pretreatment process, the resistivity of the GZO films on the PEN substrate was $1.05\;{\times}\;10^{-3}{\Omega}-cm$, which is an appropriate range for most optoelectronic applications.