• Korean Journal of Materials Research
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• v.21 no.9
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• pp.497-501
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• 2011

The CdS thin film used as a window layer in the CdTe thin film solar cell transports photo-generated electrons to the front contact and forms a p-n junction with the CdTe layer. This is why the electrical, optical, and surface properties of the CdS thin film influence the efficiency of the CdTe thin film solar cell. When CdTe thin film solar cells are fabricated, a heat treatment is done to improve the qualities of the CdS thin films. Of the many types of heat treatments, the $CdCl_2$ heat treatment is most widely used because the grain size in CdS thin films increases and interdiffusion between the CdS and the CdTe layer is prevented by the heat treatment. To investigate the changes in the electrical, optical, and surface properties and the crystallinity of the CdS thin films due to heat treatment, CdS thin films were deposited on FTO/glass substrates by the rf magnetron sputtering technique, and then a $CdCl_2$ heat treatment was carried out. After the $CdCl_2$ heat treatment, the clustershaped grains in the CdS thin film increased in size and their boundaries became faint. XRD results show that the crystallinity improved and the crystalline size increased from 15 to 42 nm. The resistivity of the CdS single layer decreased from 3.87 to 0.26 ${\Omega}cm$, and the transmittance in the visible region increased from 64% to 74%.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.37 no.2
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• pp.208-214
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• 2024

This reports the electrical properties of single-crystal β-gallium oxide (β-Ga₂O₃) vertical Schottky barrier diodes (SBDs) with a different guard ring structure. The vertical Schottky barrier diodes (V-SBDs) were fabricated with two types guard ring structures, one is with metal deposited on the Al₂O₃ passivation layer (film guard ring: FGR) and the other is with vias formed in the Al₂O₃ passivation layer to allow the metal to contact the Ga₂O₃ surface (metal guard ring: MGR). The forward current values of FGR and MGR V-SBD are 955 mA and 666 mA at 9 V, respectively, and the specific on-resistance (R_on,sp) is 5.9 mΩ·cm² and 29 mΩ·cm². The series resistance (R_s) in the nonlinear section extracted using Cheung's formula was 6 Ω, 4.8 Ω for FGR V-SBD, 10.7 Ω, 6.7 Ω for MGR V-SBD, respectively, and the breakdown voltage was 528 V for FGR V-SBD and 358 V for MGR V-SBD. Degradation of electrical characteristics of the MGR V-SBD can be attributed to the increased reverse leakage current caused by the guard ring structure, and it is expected that the electrical performance can be improved by preventing premature leakage current when an appropriate reverse voltage is applied to the guard ring area. On the other hand, FGR V-SBD shows overall better electrical properties than MGR V-SBD because Al₂O₃ was widely deposited on the Ga₂O₃ surface, which prevent leakage current on the Ga₂O₃ surface.

• Journal of Sensor Science and Technology
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• v.1 no.1
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• pp.5-12
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• 1992

We have fabricated a-Si:H multilayer for contact-type linear image sensor by means of RF glow discharge decomposition method. The ITO/i-a-Si:H/Al structure has relatively high dark current due to indium diffusion and carrier injection from both electrodes, resulting in low photocurrent to dark current. To suppress the dark current and to enhance interface electric field between ITO and i-a-Si:H film we have fabricated ITO/insulator/i-a-S:H/p-a-S:H/Al multilayer film with blocking structure. The photocurrent of ITO/$SiO_{2}(300{\AA})$/i-a-Si:H/p-a-Si:H($1500{\AA}$)/Al multilayer sensor with 5V bias voltage became saturated at about 20nA under $20{\mu}W/cm^{2}$ light intensity, while the dark current was less than 0.1nA. To increase the light generation efficiency we have adopted ITO/$SiO_{x}N_{y}(300{\AA})$/i-a-Si:H/p-a-Si:H($1500{\AA}$)/Al structure, showing photocurrent of 30nA and dark current of 0.08nA with 5V bias voltage. Also the spectral photosensitivity of the multilayer was enhanced for short wavelength visible region of 560nm, compared with that of the a-Si:H monolayer of 630nm. And its photoresponse time was about 0.3msec with the film homogeneity of 5% deviation.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.344-344
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• 2014

Transparent amorphous oxide semiconductors such as a In-Ga-Zn-O (a-IGZO) have advantages for large area electronic devices; e.g., uniform deposition at a large area, optical transparency, a smooth surface, and large electron mobility >10 cm2/Vs, which is more than an order of magnitude larger than that of hydrogen amorphous silicon (a-Si;H).1) Thin film transistors (TFTs) that employ amorphous oxide semiconductors such as ZnO, In-Ga-Zn-O, or Hf-In-Zn-O (HIZO) are currently subject of intensive study owing to their high potential for application in flat panel displays. The device fabrication process involves a series of thin film deposition and photolithographic patterning steps. In order to minimize contamination, the substrates usually undergo a cleaning procedure using deionized water, before and after the growth of thin films by sputtering methods. The devices structure were fabricated top-contact gate TFTs using the a-IGZO films on the plastic substrates. The channel width and length were 80 and 20 um, respectively. The source and drain electrode regions were defined by photolithography and wet etching process. The electrodes consisting of Ti(15 nm)/Al(120 nm)/Ti(15nm) trilayers were deposited by direct current sputtering. The 30 nm thickness active IGZO layer deposited by rf magnetron sputtering at room temperature. The deposition condition is as follows: a rf power 200 W, a pressure of 5 mtorr, 10% of oxygen [O2/(O2+Ar)=0.1], and room temperature. A 9-nm-thick Al2O3 layer was formed as a first, third gate insulator by ALD deposition. A 290-nm-thick SS6908 organic dielectrics formed as second gate insulator by spin-coating. The schematic structure of the IGZO TFT is top gate contact geometry device structure for typical TFTs fabricated in this study. Drain current (IDS) versus drain-source voltage (VDS) output characteristics curve of a IGZO TFTs fabricated using the 3-layer gate insulator on a plastic substrate and log(IDS)-gate voltage (VG) characteristics for typical IGZO TFTs. The TFTs device has a channel width (W) of $80{\mu}m$ and a channel length (L) of $20{\mu}m$. The IDS-VDS curves showed well-defined transistor characteristics with saturation effects at VG>-10 V and VDS>-20 V for the inkjet printing IGZO device. The carrier charge mobility was determined to be 15.18 cm^2 V-1s-1 with FET threshold voltage of -3 V and on/off current ratio 10^9.

• Journal of the Korean Recycled Construction Resources Institute
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• v.9 no.3
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• pp.295-302
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• 2021

Surface modification of recycled plastic film-based aggregates is demonstrated to enhance the interaction between aggregates and cement paste. It is shown that the oxygen(O₂) atmospheric pressure plasma(APP) treatment leads to a drastic increase in hydrophilicity. In case of the plasma treatment at 100W of RF power, 15/4sccm of O₂/Ar flow rate and 30sec of discharging time, the water contact angle on the aggregates surface decreased from 104.5° to 44.0°. In addition, the contact angle of surface modified aggregates kept in air increased with time elapse. Improvement of hydrophilicity can be explained by the formation of new hydrophilic oxygen functional groups which is identified as C-OH, C-O-C, C=O, -COOH by X-ray photoelectron spectroscopy(XPS) analysis and Fourier-transform infrared spectroscopy(FT-IR). Therefore, it can be concluded that the plasma treatment process is an effective method to improve adhesion of the recycled plastic film-based aggregates and cement paste.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.319-319
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• 2013

Even though the fabrication methods of metal oxide based thin film capacitor have been well established such as RF sputtering, Sol-gel, metal organic chemical vapor deposition (MOCVD), ion beam assisted deposition (IBAD) and pulsed laser deposition (PLD), an applicable capacitor of printed circuit board (PCB) has not realized yet by these methods. Barium Strontium Titanate (BST) and other high-k ceramic oxides are important materials used in integrated passive devices, multi-chip modules (MCM), high-density interconnect, and chip-scale packaging. Thin film multi-layer technology is strongly demanded for having high capacitance (120 nF/$mm^2$). In this study, we suggest novel multi-layer thin film capacitor design and fabrication technology utilized by plasma assisted deposition and photolithography processes. Ba0.6Sr0.4TiO3 (BST) was used for the dielectric material since it has high dielectric constant and low dielectric loss. 5-layered BST and Pt thin films with multi-layer sandwich structures were formed on Pt/Ti/$SiO_2$/Si substrate by RF-magnetron sputtering and DC-sputtering. Pt electrodes and BST layers were patterned to reveal internal electrodes by photolithography. SiO2 passivation layer was deposited by plasma-enhanced chemical vapor deposition (PE-CVD). The passivation layer plays an important role to prevent short connection between the electrodes. It was patterned to create holes for the connection between internal electrodes and external electrodes by reactive-ion etching (RIE). External contact pads were formed by Pt electrodes. The microstructure and dielectric characteristics of the capacitors were investigated by scanning electron microscopy (SEM) and impedance analyzer, respectively. In conclusion, the 0402 sized thin film multi-layer capacitors have been demonstrated, which have capacitance of 10 nF. They are expected to be used for decoupling purpose and have been fabricated with high yield.

• Journal of Intelligence and Information Systems
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• v.12 no.3
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• pp.83-93
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• 2006

This paper is wireless location awareness technology using RFID. We investigates the Location of the received Signal strength reported by RF Analyses of the data are performed to understand the underlying features of location fingerprints. The system is performed factors the extreme environmental Emit signal, which consists of a unique 5000 Terminals. The Location Service have become very popular in many service industries, purchasing and distribution logistics, industry, manufacturing companies and a parking place. The Technically optimal Solution would be the storage of Intelligence information in the most common form of electronic data-carrying device in use in everyday life is the smart card based upon a contact field (telephone smart card, bank cards). The method of an indoor positioning experiment system is compared using measured Location data and a charge of service. The result of research showed the following: first, to check out the mechanism between benefit of system installation and operation of Active RFID. Second, it contributed on indoor wireless location intelligence system efficiency.

• Journal of the Korean Vacuum Society
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• v.17 no.3
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• pp.199-203
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• 2008

The effects of surface treatment by $O_2$ plasma on the Bio-FETs were investigated by using the pseudo-MOSFETs on the SOI substrates. After a surface treatment by $O_2$ plasma with different RF powers, the current-voltage and field effect mobility of pseudo-MOSFETs were measured by applying back gate bias. The subthreshold characteristics of pseudo-MOSFETs were significantly degraded with increase of RF power. Additionally, a forming gas anneal process in 2 % diluted $H_2/N_2$ ambient was developed to recover the plasma process induced surface damages. A considerable improvement of the subthreshold characteristics was achieved by the forming gas anneal. Therefore, it is concluded that the pseudo-MOSFETs are a powerful tool for monitoring the surface treatment of Bio-FETs and the forming gas anneal process is effective for improving the electrical characteristics of Bio-FETs.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.313-313
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• 2011

일반적으로 초친수 박막들은 물의 퍼짐 현상이 발생하여 빠른 건조와 함께 표면에 붙은 이물질 제거와 공기 중의 미세먼지를 흡착을 하지 않음으로써 표면에 워터스폿(water spot, 물자국)이 생기지 않고 다시 깨끗해지는 자가세정 능력을 가져 유리 및 건축자재의 표면처리 용도로써 많이 사용하고 있다. 이러한 초친수 박막을 제조하는 방법으로는 sol-gel법, 진공 증착법, 화학 기상 증착법, 스퍼터링법 등을 이용한다. 이중 스퍼터링법은 높은 증착속도를 얻을 수 있으며, 비교적 낮은 진공도에서 박막제작을 할 수 있다는 장점을 가진다. 본 실험은 RF-magnetron sputtering법을 이용하여 화학적으로 매우 안정하고 높은 투과율을 가지며 기계적 표면 경도가 우수하여 코팅용 박막으로 널리 이용되고 있는 $TiO_2$와 $SiO_2$를 Single Layer와 Double Layer인 $TiO_2/SiO_2$/Glass박막을 제작하여 초친수 특성을 분석하였다. 광학적 특성을 알아보기 위해 UV-vis spectrophotometer장비를 사용하여 측정한 결과 가시광 영역에서 80% 이상의 높은 투과율을 나타내었다. 이는 모든 박막들의 광학적 특성이 우수하여 높은 광학적 특성을 요구하는 분야에 널리 사용 될 수 있다 것이라는 것을 확인 할 수 있었다. 또한 박막의 표면을 확인하기 위해 AFM을 측정한 결과 모든 박막들은 고른 거칠기를 나타내고 있다는 것을 볼 수 있었다. 이것으로 볼때 초친수 역시 초발수 박막의 표면과 마찬가지로 일정한 패턴을 가져야 하는 것을 확인 할 수 있었다. 박막이 초친수성을 띄기 위해 가장 중요시되는 조건인 접촉각이 5도 이하인 조건을 확인을 위해 Contact Angle을 이용하여 접촉각을 측정해 본 결과 박막들은 초친수성의 조건인 5도 보다 더욱 낮은 접촉각의 측정결과를 나타내었다. 위 실험결과를 볼 때 $TiO_2$와 $SiO_2$를 기반으로 단층 혹은 다층으로 박막을 제작하면 더욱 좋은 초친수 특성을 가져 사회적으로 여러 분야에 사용 가능 할 것이라 사료된다.

• Journal of the Korea Society of Computer and Information
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• v.15 no.8
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• pp.107-115
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• 2010

RFID (Radio Frequency IDentification) technology, automatic identification and data capture technologies in ubiquitous computing is an essential skill. Low-cost Radio Frequency Identification tags using memory and no physical contact due to the ease of use and maintenance of excellence are going to use expanded. However, it is possible to the illegal acquisition of the information between RFID tags and readers because RFID uses the RF signal, and the obtained information can be used for the purpose of location tracking and invasion of privacy. In this paper, we proposed the security scheme to protect against the illegal user location tracking and invasion of privacy. The security scheme proposed in this paper, using Gray Code and reduced the capacity of the calculation of the actual tags, However, it is impossible for the malicious attacker to track information because tag information transmitted from the reader is not fixed. Therefore, even if the tags information is obtained by a malicious way, our scheme provides more simple and safe user privacy than any other protection methods to protect user privacy, because not actual information but encrypted information is becoming exposed.