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http://dx.doi.org/10.5757/JKVS.2008.17.3.199

Degradation of electrical characteristics in Bio-FET devices by O2 plasma surface treatment and improving by heat treatment  

Oh, Se-Man (Dept. of Electronic materials engineering. Kwangwoon Univ.)
Jung, Myung-Ho (Dept. of Electronic materials engineering. Kwangwoon Univ.)
Cho, Won-Ju (Dept. of Electronic materials engineering. Kwangwoon Univ.)
Publication Information
Journal of the Korean Vacuum Society / v.17, no.3, 2008 , pp. 199-203 More about this Journal
Abstract
The effects of surface treatment by $O_2$ plasma on the Bio-FETs were investigated by using the pseudo-MOSFETs on the SOI substrates. After a surface treatment by $O_2$ plasma with different RF powers, the current-voltage and field effect mobility of pseudo-MOSFETs were measured by applying back gate bias. The subthreshold characteristics of pseudo-MOSFETs were significantly degraded with increase of RF power. Additionally, a forming gas anneal process in 2 % diluted $H_2/N_2$ ambient was developed to recover the plasma process induced surface damages. A considerable improvement of the subthreshold characteristics was achieved by the forming gas anneal. Therefore, it is concluded that the pseudo-MOSFETs are a powerful tool for monitoring the surface treatment of Bio-FETs and the forming gas anneal process is effective for improving the electrical characteristics of Bio-FETs.
Keywords
Bio; Pseudo-MOSFET$O_2$ plasma surface treatment; forming gas;
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