• Title/Summary/Keyword: RF components

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Development of Large-Area RF Ion Source for Neutral Beam Injector in Fusion Devices

  • Chang, Doo-Hee;Jeong, Seung Ho;Kim, Tae-Seong;Park, Min;Lee, Kwang Won;In, Sang Ryul
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.08a
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    • pp.179.2-179.2
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    • 2013
  • A large-area RF-driven ion source is being developed at Germany for the heating and current drive of ITER device. Negative hydrogen ion sources are major components of neutral beam injection (NBI) systems in future large-scale fusion experiments such as ITER and DEMO. The RF sources for the production of positive hydrogen ions have been successfully developed at IPP (Max-Planck-Institute for Plasma Physics), Garching, for the ASDEX-U and W7-AS neutral beam heating systems. Ion sources of the first NBI system (NBI-1) for the KSTAR tokamak have been developed successfully with a bucket plasma generator based on the filament arc discharge, which have contributed to achieve a good plasma performance such as 15 sec H-mode operation with an injection of 3.5 MW NB power. There is a development plan of RF ion source at the KAERI to extract the positive ions, which can be used for the second NBI system (NBI-2) of the KSTAR and to extract the negative ions for future fusion devices such as Fusion Neutron Source and Korea-DEMO. The development progresses of RF ion source at the KAERI are described in this presentation.

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Performance Optimization Study of FinFETs Considering Parasitic Capacitance and Resistance

  • An, TaeYoon;Choe, KyeongKeun;Kwon, Kee-Won;Kim, SoYoung
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.14 no.5
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    • pp.525-536
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    • 2014
  • Recently, the first generation of mass production of FinFET-based microprocessors has begun, and scaling of FinFET transistors is ongoing. Traditional capacitance and resistance models cannot be applied to nonplanar-gate transistors like FinFETs. Although scaling of nanoscale FinFETs may alleviate electrostatic limitations, parasitic capacitances and resistances increase owing to the increasing proximity of the source/drain (S/D) region and metal contact. In this paper, we develop analytical models of parasitic components of FinFETs that employ the raised source/drain structure and metal contact. The accuracy of the proposed model is verified with the results of a 3-D field solver, Raphael. We also investigate the effects of layout changes on the parasitic components and the current-gain cutoff frequency ($f_T$). The optimal FinFET layout design for RF performance is predicted using the proposed analytical models. The proposed analytical model can be implemented as a compact model for accurate circuit simulations.

MR Line Scan Angiography using Spectral Analysis

  • Jung, Kwan-Jin;Ro, Yong-Man;Sim, Bog-Tae;Ra, Jong-Beom;Cho, Zang-Hee
    • Proceedings of the KOSOMBE Conference
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    • v.1989 no.05
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    • pp.27-28
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    • 1989
  • In conventional line scan angiography, flow signal has been enhanced by the time_of_flight effect while the signal from stationary tissues has been suppressed by the saturation rf pulse followed by spoiling gradients. Due to the inhomogeneous rf field and the tissue dependent T1 relaxation time, however, stationary tissues can not be suppressed completely or uniformly, and the remnant stationary signal deteriorates the resultant angiogram. Here, the complete cancellation of stationary tissues is made possible by the spectral analysis of a series of repetitive line images of the same slice. The Fourier transformation of a set of line images results in the spectrum images, where stationary tissues are collected into the dc component while arteries are included in harmonic components because of the variation of the flow velocity and the resultant flow signal in arteries according to the cardiac cycle. The summation of harmonic components excluding the dc component results in the angiogram of arteries with the complete cancellation of stationary tissues.

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Embedded Inductors in MCM-D for RF Appliction (RF용 MCM-D 기판 내장형 인덕터)

  • 주철원;박성수;백규하;이희태;김성진;송민규
    • Journal of the Microelectronics and Packaging Society
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    • v.7 no.3
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    • pp.31-36
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    • 2000
  • We developed embedded inductors in MCM-D substrate for RF applications. The increasing demand for high density packaging was the driving forces to the development of MCM-D technology. Most of these development efforts have been focused on high performance digital circuits. However, recently there is a great need fur mixed mode circuits with a combination of digital, analog and microwave devices. Mixed mode modules often have a large number of passive components that are connected to a small number of active devices. Integration of passive components into the high density MCM substrate becomes desirable to further reduce cost, size, and weight of electronic systems while improving their performance and reliability. The proposed MCM-D substrate was based on Cu/photosensitive BCB multilayer and Ti/Cu is used to form the interconnect layer. Seed metal was formed with 1000 $\AA$ Ti/3000 $\AA$ Cu by sputtering method and main metal was formed with 3 $\mu\textrm{m}$ Cu by electrical plating method. The multi-turn sprial inductors were designed in coplanar fashion. This paper describe the manufacturing process of integrated inductors in MCM-D substrate and the results of electrical performance test.

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E-band low-noise amplifier MMIC with impedance-controllable filter using SiGe 130-nm BiCMOS technology

  • Chang, Woojin;Lee, Jong-Min;Kim, Seong-Il;Lee, Sang-Heung;Kang, Dong Min
    • ETRI Journal
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    • v.42 no.5
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    • pp.781-789
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    • 2020
  • In this study, an E-band low-noise amplifier (LNA) monolithic microwave integrated circuit (MMIC) has been designed using silicon-germanium 130-nm bipolar complementary metal-oxide-semiconductor technology to suppress unwanted signal gain outside operating frequencies and improve the signal gain and noise figures at operating frequencies. The proposed impedance-controllable filter has series (Rs) and parallel (Rp) resistors instead of a conventional inductor-capacitor (L-C) filter without any resistor in an interstage matching circuit. Using the impedance-controllable filter instead of the conventional L-C filter, the unwanted high signal gains of the designed E-band LNA at frequencies of 54 GHz to 57 GHz are suppressed by 8 dB to 12 dB from 24 dB to 26 dB to 12 dB to 18 dB. The small-signal gain S21 at the operating frequencies of 70 GHz to 95 GHz are only decreased by 1.4 dB to 2.4 dB from 21.6 dB to 25.4 dB to 19.2 dB to 24.0 dB. The fabricated E-band LNA MMIC with the proposed filter has a measured S21 of 16 dB to 21 dB, input matching (S11) of -14 dB to -5 dB, and output matching (S22) of -19 dB to -4 dB at E-band operating frequencies of 70 GHz to 95 GHz.

Development of Short-Wavelength Transmission Line Employing Periodically Perforated Ground Metal for Application to Miniaturized On-chip Passive Components on Si RFIC (Si RFIC상의 온칩 수동소자에의 응용을 위한 주기적 접지 금속막 선로를 이용한 단파장 전송선로 개발)

  • Joh, Han-Nah;Park, Young-Bae;Yun, Young
    • Journal of Advanced Marine Engineering and Technology
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    • v.32 no.2
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    • pp.330-335
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    • 2008
  • In this study, highly miniaturized short-wavelength transmission line employing periodically perforated ground metal (PPGM) structures were developed for application to miniaturized on-chip passive component on Si RFIC. The transmission line employing PPGM structure showed shorter wavelength and lower characteristic impedance than conventional coplanar-type transmission line. The wavelength of the transmission line employing PPGM structure was 57% of the conventional coplanar-type transmission line on Si Radio Frequency Integrated Circuit (RFIC) substrate. Basic characteristics of the transmission line employing PPGM structure were also investigated in order to evaluate its suitability for application to a development of miniaturized passive on-chip components. According to the results, it was found that the PPGM structure is a promising candidate for application to a development of miniaturized on-chip passive components on Si RFIC.

Analysis of Chemical and Morphological Changes of Phenol Formaldehyde-based Photoresist Surface caused by O2 Plasma

  • Shutov, D.A.;Kang, Seung-Youl;Baek, Kyu-Ha;Suh, Kyung-Soo;Min, Nam-Ki;Kwon, Kwang-Ho
    • Transactions on Electrical and Electronic Materials
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    • v.8 no.5
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    • pp.211-214
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    • 2007
  • Chemical and morphological changes of phenol formaldehyde-based photoresist after $O_2$ radiofrequency(RF) plasma treatment depending on exposure time and source power were investigated. It was found that etch rate of photoresist sharply increased after discharge turn on and reached a limit with increase in plasma exposure time. Contact angle measurements and X-ray photoelectron spectroscopy(XPS) analysis showed that the surface chemical structure become nearly constant after 15 sec of the treatment. Atomic force microprobe(AFM) measurements were shown that surface roughness was increased with plasma exposure time.

Power Manageable IoT Systems Using RF433 Wireless Sensor Network and ARDUINO-YUN Based Gateway (RF433 무선 센서 네트워크와 ARDUINO-YUN 기반의 게이트웨이를 활용한 전력관리 IoT 시스템)

  • Choi, Eun-Seok;Shim, Jae-Ryong;Chang, Sekchin
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.21 no.5
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    • pp.936-944
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    • 2017
  • These days, research has been made for a variety of internet of things (IoT) technologies over industrial fields. The current research trend includes the effective adoption of the IoT technologies. But, most IoT researches assume a relatively complicated structure, which consists of sensor devices, gateway, network server, and application server. Of course, the structure has distinct merits in the aspects of flexibility and expandability. However, the complicated structure causes the system implementation overhead including high-cost implementation, and hinders the practical usage of IoT in the industry areas, which require a small-size network. In this paper, we propose a novel IoT system architecture, which guarantees the small-size network and the low-cost implementation. Also, we implement the infrastructure, which includes the RF433-based sensor network, the ARDUINO-YUN based gateway, and the application server using Apache/PHP/MySQL (APM) package. Finally, we present the effective power management scheme among these components.

The time domain testing technique of RFIC based on specifications (설계사양기반 RF 집적회로의 시간영역 테스팅 기법)

  • Han Seok-Bung;Baek Han-Suk;Kim Kang-Chul
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.43 no.5 s.347
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    • pp.34-47
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    • 2006
  • In this paper, a new testing technique for core components of wireless transceiver was proposed. That was, band fault models (including the information of specifications in the analogue and RF IC) and methods which can test specifications in the time domain easily by observing a variation of band fault models in the circuit output were proposed and developed. This technique had an advantage over testing technique in frequency domain because it didn't need expensive test equipments and could reduce the time required. Test technique proposed in this paper was adapted to the test of 5.25 GHz low noise amplifier and proved that this testing technique was efficient in RF IC including low noise amplifier.

Degradation of RF Receiver Sensitivity Due to TVS Diode (TVS Diode에 의한 안테나 무선감도 저하 분석)

  • Hwang, Yoon-Jae;Park, Je-Kwang;Yook, Jong-Gwan
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.24 no.10
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    • pp.979-986
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    • 2013
  • In this paper, a TVS diode which is commonly used as a ESD protector in wireless communication devices could cause antenna wireless sensitivity to decrease has been analyzed. When a smartphone doesn't have enough space to place many components, there would be its speaker near antenna area. In order to protect ESD coming through the speaker there also could be a TVS within antenna GND area. Digital audio signal which was sent to speaker and CDMA RF communication signal coupled from antenna was mixed by TVS. And this leakage current running through TVS resulted in decrease of antenna wireless sensitivity. The results of various experiments can be explained using circuit simulation. Following works will give us some insights that can reduce unwanted summation of digital and RF signal due to nonlinearity of ESD protectors.