• Electrical & Electronic Materials
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• v.10 no.7
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• pp.706-712
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• 1997

AlN(Aluminium Nitride) thin films were prepared using by RF sputtering method on the Si(100) and Si(111) substrates as the parameters of the substrate temperature, RF power, sputtering duration and the $N_2$/Ar ratio and investigated by X-ray diffraction, IR spectrometry, n&k analyzer. For the Si(100) substrate, the AlN thin films of (101) orientation were obtained under the conditions of room temperature and the nitrogen of 60 vol.%. For the Si(111) substrate, the (002) AlN thin films were obtained under the nitrogen of 100 vol.%. In case of the thin film prepared in the condition of above 60 vol.% of the nitrogen, the average value of the surface roughness of the film was 151$\AA$. From the changes of the half widths of E$_1$[TO] phonon bands at the wavenumber of 680$cm^{-1}$ /, it were compared of the crystallinities of the films which were grown under the different conditions. The thicknesses of AlN films were decreased dramatically in the region of the nitrogen of 40~60 vol.%. Its due to the nitridation of the Al target surface and getting low of the sputtering yield by the $N_2$/Ar ratio being increased.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.499-502
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• 2000

In this study, $\alpha$-Fe$_2$O$_3$thin films were deposited on $Al_2$O$_3$substrate by RF magnetron sputtering method from a $\alpha$-Fe$_2$O$_3$target(99.9%). The sputtering atmosphere was Ar and 80%Ar:20%O$_2$mixture in a total gas pressure of 1~3mTorr. As-deposited $\alpha$-Fe$_2$O$_3$thin films were heated to 300, 400, 500, $600^{\circ}C$ for 5hr in oxygen atmosphere. The structure and the morphology of $\alpha$-Fe$_2$O$_3$thin films were examined by scanning Electron microscopy(SEM) and the crystal structure was analyzed by X-Ray Diffractometer(XRD). The microstructure of the annealed $\alpha$-Fe$_2$O$_3$films exhibits rather gross particle and the grain size was less than 100nm. Since the grain size was very small, the gas sensitivity was expected to be improved.

• Progress in Superconductivity
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• v.4 no.2
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• pp.153-156
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• 2003

We have studied fabrication of $MgB_2$ thin film on $SrTiO_3$ (001) and r-cut $A1_2$$O_3$ substrates by rf magnetron sputtering method using and $ MgB_2$ single target and two targets of Mg and B, respectively. Based on P -T phase diagram of $MgB_2$ and vapor pressure curves of Mg and B, a three-step process was employed. B layer was deposited at the bottom to enhance the film adhesion to the substrate. Secondly, co-sputtering of Mg and B was done. Finally, Mg was sputtered on top to compensate fur the loss of Mg during annealing. Subsequently, $MgB_2$ films were in-situ annealed in various conditions. The sample fabricated using the three-step process showed $T_{c}$ of 24 K and formation of superconducting $MgB_2$ phase was confirmed by XRD spectra. In case of co-sputtering deposition, $T_{c}$ depended on annealing time and argon pressure. However, those made by single-target sputtering showed non-superconducting behavior or low transition temperature, at best.est.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.04b
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• pp.88-91
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• 2000

The $(Sr_{0.85}Ca_{0.15})TiO_3$(SCT) thin films are deposited on Pt-coated electrode(Pt/TiN/$SiO_2$/Si) using RF sputtering method. The crystallinity of SCT thin films is increased with increase of substrate temperature in the temperature range of 200~500$[^{\circ}C]$. V-I characteristics of SCT thin films show the increasing leakage current with the increases of deposition temperature. The conduction mechanism of the SCT thin films observed in the temperature range of 25~100$[^{\circ}C]$ can be divided into four characteristic regions with different mechanism by the increasing current.

• Proceedings of the IEEK Conference
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• 2007.07a
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• pp.441-442
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• 2007

We deposited nickel oxide(NiO) thin films on silicon(Si) substrates at Room temperature and $500^{\circ}C$ using a nickel target by reactive DC and RF sputtering. In addition, we anneal to NiO thin films deposited at room temperature. Using spectroscopic eillipsometry, we obtained optical characteristics of every films. We discussed relations of the optical and structural properties of NiO thin films with the oxygen flow rate, substrate temperature and annealing temperatures. Refraction was decreased and defect was increased when NiO thin films was annealed. We also analyzed the electrical characteristics of NiO films which deposited DC and RF sputtering method.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.893-896
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• 2000

The SrBi$_2$Ta$_2$O$\sub$9/(SBT) thin films are deposited on Pt-coated electrode(Pt/TiO$_2$/SiO$_2$/Si) using RF sputtering method. The SBT thin films deposited on substrate at 400-500[$^{\circ}C$]. SBT thin film deposited on Pt-coated electrodes have the cubic perovskite structure and polycrystalline state. With increasing annealing temperature from 600[$^{\circ}C$] to 850[$^{\circ}C$], flourite Phase was crystalized to 650[$^{\circ}C$] and Bi-layered perovskite phase was crystalized above 700[$^{\circ}C$]. The maximum remanent polarization is 11.73 ${\mu}$C/cm$^2$at 500[$^{\circ}C$] of substrate temperature and 750[$^{\circ}C$] annealing temperature for 30min.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.313-316
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• 2003

The lead zirconate titanate, $Pb(Zr_{0:52}Ti_{0:48})O_3$, films of $0.5\;{\mu}m,\;1\;{\mu}m$ and $2\;{\mu}m$ thickness were fabricated on $Pt/Ti/SiO_2/Si$ substrate by the rf magnetron sputtering method. The PZT films were annealed using by a rapid thermal annealing (RTA) method. The thickness dependence of the film structure, dielectric properties, Polarization-electric field hysteresis loops and capacitance-voltage characteristics were investigated over the thickness range of $0.5\;{\mu}m,\;1\;{\mu}m$ and $2\;{\mu}m$. According to the XRD patterns of the films, (110) peak intensity increases with film thickness increased. The increase of PZT films thickness leads to the decrease of the remanent polarization and the dielectric constant.

• Korean Journal of Metals and Materials
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• v.47 no.1
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• pp.38-43
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• 2009

To investigate the effect of RF power on the structural, optical and electrical properties of amorphous InGaZnO (a-IGZO), its thin films and TFTs were prepared by RF magnetron sputtering method with different RF power conditions of 40, 80 and 120 W at room temperature. In this study, as RF power during the deposition process increases, the RMS roughness of a-IGZO films increased from 0.26 nm to 1.09 nm, while the optical band-gap decreased from 3.28 eV to 3.04 eV. In the case of the electrical characteristics of a-IGZO TFTs, the saturation mobility increased from $7.3cm^2/Vs$ to $17.0cm^2/Vs$, but the threshold voltage decreased from 5.9 V to 3.9 V with increasing RF power. It is regarded that the increment of RF power increases the carrier concentration of the a-IGZO semiconductor layer due to the higher generation of oxygen vacancies.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.12
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• pp.969-973
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• 2012

AlN thin films were deposited on p-type Si(100) substrates by RF magnetron sputtering method. This study showed the change of the preferential orientation of AlN thin films deposition with the change of the deposition conditions such as sputtering pressure and Ar/N2 gas ratio in chamber. It was identified by X-ray diffraction patterns that AlN thin film deposited at low sputtering pressure has a (002) orientation, however its preferred orientation was changed from the (002) to the (100) orientation with increasing sputtering pressure. Also, it was observed that the properties of AlN thin films such as thickness, grain size and surface roughness were largely dependent on Ar/$N_2$ gas ratio and a high quality thin film could be prepared at lower nitrogen concentration. AlN thin films were investigated relationship between preferential orientation and deposition condition by using XRD, FE-SEM and PFM.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.247-247
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• 2009

In this work, Ga-doped ZnO (GZO) thin films for toxic gas sensor application were deposited on low temperature co-fired ceramic (LTCC) substrates, by RF magnetron sputtering method. LTCC is one of promising materials for integration with heater, low cost production and high manufacturing yields than silicon substrate. The LTCC substrates with thickness of $400\;{\mu}m$ were fabricated by laminating 12 greentapes which consist of alumina and glass particle in an organic binder. The GZO thin films deposited on the substrates and were analyzed by X-ray diffraction method (XRD) and field emission scanning electron microscope (FESEM). The films are well crystallized in the hexagonal (wurzite) structure with increasing thickness. The fabricated sensors showed good sensitivity and fast response time to common types of toxic gases (NOx, COx).