• Title/Summary/Keyword: RF Noise

Search Result 620, Processing Time 0.035 seconds

Analytical Noise Parameter Model of Short-Channel RF MOSFETs

  • Jeon, Jong-Wook;Park, Byung-Gook;Lee, Jong-Duk;Shin, Hyung-Cheol
    • JSTS:Journal of Semiconductor Technology and Science
    • /
    • v.7 no.2
    • /
    • pp.88-93
    • /
    • 2007
  • In this paper, a simple and improved noise parameter model of RF MOSFETs is developed and verified. Based on the analytical model of channel thermal noise, closed form expressions for four noise parameters are developed from proposed equivalent small signal circuit. The modeling results show a excellent agreement with the measured data of $0.13{\mu}m$ CMOS devices.

Analysis and extraction method of noise parameters for short channel MOSFET thermal noise modeling (단채널 MOSFET의 열잡음 모델링을 위한 잡음 파라메터의 분석과 추출방법)

  • Kim, Gue-Chol
    • Journal of the Korea Institute of Information and Communication Engineering
    • /
    • v.13 no.12
    • /
    • pp.2655-2661
    • /
    • 2009
  • In this paper, an accurate noise parameters for thermal noise modeling of short channel MOSFET is derived and extracted. Fukui model for calculating the noise parameters of a MOSFET is modified by considering effects of parasitic elements in short channel, and it is compared with conventional noise model equation. In addition, for obtaining the intrinsic noise sources of devices, noise parameters(minimum noise figure $F_{min}$, equivalent noise resistance $R_n$ optimized source admittance $Y_{opt}=G_{opt}+B_{opt}$) in submicron MOSFETs is extracted. With this extraction method, the intrinsic noise parameters of MOSFET without effects of probe pad and extrinsic parasitic elements from RF noise measurements can be directly obtained.

Design And Component Performance Analysis of RF System for W-CDMA Receiver (W-CDMA 수신기 RF System 설계 및 부품 성능 분석)

  • 지만구;이규헌;김학선
    • Proceedings of the IEEK Conference
    • /
    • 2000.11a
    • /
    • pp.197-200
    • /
    • 2000
  • In this paper, The RF system of W-CDMA receiver is designed and the performance is analyzed. The linearity characteristic and the noise characteristic are presented in the performance. The linearity characteristic is analyzed by PN and IIP3. The noise characteristic is analyzed by NF. In addition, sweeping of the nonlinear components parameter affecting the linear performance is tested and the most maximal possible parameter to maintain the linear performance is introduced. The transceiver RF system of W-CDMA and cdma2000 is designed and presented adapting the nonlinear parameter introduced.

  • PDF

Interference and noise analysis for hybrid FSO/RF-based 6G mobile backhaul

  • Soyinka Nath;Shree Prakash Singh;Sujata Sengar
    • ETRI Journal
    • /
    • v.44 no.6
    • /
    • pp.966-976
    • /
    • 2022
  • Optical wireless communication, or free space optics, is a promising solution for backhauls in sixth-generation mobile systems. However, the susceptibility of optical links to weather conditions has led to FSO links being furnished with radio frequency (RF) backups. These Hybrid FSO/RF systems provide enhanced link availability but lead to RF resource wastage. Cognitive radio technology, in contrast, is well known for its optimal use of RF resources and may be combined with an FSO link to create a Cognitive Hybrid FSO/RF system. This work uses such a system to analyze a configuration for a mobile backhaul in sixth-generation mobile systems. This configuration can seamlessly coexist with established large scale RF cellular networks. The performance of this configuration is analyzed with respect to outage probability and average bit error by considering the impact of optical channel turbulence, misalignment loss, RF interference, and noise. Mathematical closed-form expressions are verified by simulations.

Analysis and Improvement Specific Frequency Reception Noise Phenomena Due to RF Radiation Signal (RF 방사 신호로 인한 특정 주파수 수신 잡음 현상의 원인분석 및 개선)

  • Kwon, Jung-Hyuk;Kim, Jong-Min;Lee, Wang-Sang
    • Journal of Aerospace System Engineering
    • /
    • v.16 no.3
    • /
    • pp.73-83
    • /
    • 2022
  • The purpose of this paper was to identify a method to improve received noise in a specific frequency band, caused by RF radiation signals during aircraft operation. The communication equipment of the aircraft is critical to the performance and safety of the flight mission, as it is responsible for the function of internal and external communications. Noise-free, clean communication quality, as well as transmission and receiving functions have to be implemented. Thus, the cause analysis of the reception noise in a specific frequency band, was analyzed through trouble shooting. The receiving noise due to the RF radiation signal emitted from the subsystem unit inside the aircraft, was improved by shielding with a CAP with electroless nickel plating applied. Additionally, the measurement and verification results of the improvement method are also described.

A New Automatic Compensation Network for System-on-Chip Transceivers

  • Ryu, Jee-Youl;Noh, Seok-Ho
    • ETRI Journal
    • /
    • v.29 no.3
    • /
    • pp.371-380
    • /
    • 2007
  • This paper proposes a new automatic compensation network (ACN) for a system-on-chip (SoC) transceiver. We built a 5 GHz low noise amplifier (LNA) with an on-chip ACN using 0.18 ${\mu}m$ SiGe technology. This network is extremely useful for today's radio frequency (RF) integrated circuit devices in a complete RF transceiver environment. The network comprises an RF design-for-testability (DFT) circuit, capacitor mirror banks, and a digital signal processor. The RF DFT circuit consists of a test amplifier and RF peak detectors. The RF DFT circuit helps the network to provide DC output voltages, which makes the compensation network automatic. The proposed technique utilizes output DC voltage measurements and these measured values are translated into the LNA specifications such as input impedance, gain, and noise figure using the developed mathematical equations. The ACN automatically adjusts the performance of the 5 GHz LNA with the processor in the SoC transceiver when the LNA goes out of the normal range of operation. The ACN compensates abnormal operation due to unusual thermal variation or unusual process variation. The ACN is simple, inexpensive and suitable for a complete RF transceiver environment.

  • PDF

The Linearity Analysis of Low Noise Down-Converter for Ka-band UHD Satellite-broadcasting (Ka-대역 UHD 위성방송용 저 잡음 하향변환기의 선형성 분석)

  • Mok, Gwang-Yun;Rhee, Young-Chul
    • The Journal of the Korea institute of electronic communication sciences
    • /
    • v.12 no.2
    • /
    • pp.267-272
    • /
    • 2017
  • In this paper, we suggested that a RF-front module of down-converter that represents the lowest noise figure to receive high quality video signals because the attenuation occurs in the atmosphere over 20GHz. By budget analysis of CDR, SFDR and CIP3 of RF-FEM, we also analyzed the parameters and linearity that presents high dynamic range. The total gain of designed Ka-band down-converter is 61.8dBand noise figure is 1.05dB, so gain and noise figures show excellent properties. In the future, the designed RF-FEM will be applied to the Ka-band satellite down-converter for UHD-class video transmission.

A 3.6/4.8 mW L1/L5 Dual-band RF Front-end for GPS/Galileo Receiver in $0.13{\mu}m$ CMOS Technology (L1/L5 밴드 GPS/Galileo 수신기를 위한 $0.13{\mu}m$ 3.6/4.8 mW CMOS RF 수신 회로)

  • Lee, Hyung-Su;Cho, Sang-Hyun;Ko, Jin-Ho;Nam, Il-Ku
    • Proceedings of the IEEK Conference
    • /
    • 2008.06a
    • /
    • pp.421-422
    • /
    • 2008
  • In this paper, CMOS RF front-end circuits for an L1/L5 dual-band global positioning system (GPS)/Galileo receiver are designed in $0.13\;{\mu}m$ CMOS technology. The RF front-end circuits are composed of an RF single-to-differential low noise amplifier, an RF polyphase filter, two down-conversion mixers, two transimpedance amplifiers, a IF polyphase filter, four de-coupling capacitors. The CMOS RF front-end circuits provide gains of 43 dB and 44 dB, noise figures of 4 dB and 3 dB and consume 3.6 mW and 4.8 mW from 1.2 V supply voltage for L1 and L5, respectively.

  • PDF