• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.9
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• pp.24-29
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• 2010

This paper presents the RF modeling for silicon nanowire MOSFET with 30 nm channel length and 5 nm channel radius. Equations for analytical parameter extraction are derived by analysis of Y-parameter. Accuracies of the new model and extracted parameters have been verified by 3-dimensional device simulation data up to 100 GHz. The model verifications are performed under conditions of saturation region ($V_{gs}$ = $_{ds}$ = 1 V) and linear region ($V_{gs}$ = 1 V, $V_{ds}$ = 0.5 V). The RMS modeling error of Y-parameters was calculated to be 1 %.

• Journal of IKEEE
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• v.8 no.1 s.14
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• pp.136-144
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• 2004

From the AC analysis results utilizing a two dimensional device simulator, the ac equivalent-circuit modeling of the ESD protection devices is executed. It is explained that the ac equivalent circuit of the NMOS protection transistor is modeled by a rather complicated form and that, depending on the frequency range, the error can be large if it is modeled by a simple RC serial circuit. It is also shown that the ac equivalent circuit of the thyristor-type pnpn protection device can be modeled by a simple RC serial circuit. Based on the circuit simulations utilizing the extracted equivalent circuits, the effects of the parasitics in the protection device on the characteristics of LNA are examined when the LNA, which is one of the important RF circuits, is equipped with the protection device. It is explained that a large error can result in estimating the circuit characteristics if the NMOS protection transistor is modeled by a simple capacitor. It is also confirmed that the degradation of the LNA characteristics by incorporating the ESD protection device can be reduced a lot by adopting the suggested pnpn device.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.12
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• pp.24-29
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• 2009

In order to model the high temperature dependence of the cutoff frequency $f_T$ in $0.18{\mu}m$ deep n-well isolated bulk NMOSFET, high temperature data of electron velocity of bulk MOSFETs from $30^{\circ}C$ to $250^{\circ}C$ are obtained by an accurate RF extraction method using measured S-parameters. From these data, an improved temperature-dependent electron velocity equation is developed and implemented in a BSIM3v3 SPICE model to eliminate modeling error of a conventional one in the high temperature range. Better agreement with measured $f_T$ data from $30^{\circ}C$ to $250^{\circ}C$ are achieved by using the SPICE model with the improved equation rather than the conventional one, verifying its accuracy of the improved one.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.7
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• pp.624-630
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• 2006

ZnO deposition parameters are not independent and have a nonlinear and complex property. To propose a method that could verify and predict the relations of process variables, neural network was used. At first, ZnO thin films were deposited by using RF magnetron sputtering process with various conditions. Si, GaAs, and Glass were used as substrates. The temperature, work pressure, and RF power of the substrate were $50\sim500^{\circ}C$, 15 mTorr, and $180\sim210W$, respectively : the purity of the target was ZnO 4 N. Structural properties of ZnO thin films were estimated by using XRD (0002) peak intensity. The structure of neural network was a form of 4-7-1 that have one hidden layer. In training a network, learning rate and momentum were selected as 0.2, 0.6 respectively. A backpropagation neural network were performed with XRD (0002) peak data. After training a network, the temperature of substrate was evaluated as the most important parameter by sensitivity analysis and response surface. As a result, neural network could capture nonlinear and complex relationships between process parameters and predict structural properties of ZnO thin films with a limited set of experiments.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.5
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• pp.54-61
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• 1999

We suggested a macro medel for MOS transistors, which incorporates the distributed substrate resistance by using a method which utilizes external diodes on SPICE MOS model. By fitting the simulated s-parameters to the measures ones, we obtained a model set for the W=200TEX>$\mu\textrm{m}$ and L=0.8TEX>$\mu\textrm{m}$ NMOS transistor, and also analyzed the effects of distributed substrate resistance in the RF range. By comparing the physical parameters calculated from simulated s-parameters such as ac resistances and capacitances with the measured ones, we confirmed the validity of the simulation results. For the frequencies below 10GHz, it seems appropriated to use a simple macro model which utilizes the existing SPICE MOS model with junction diodes, after including one lumped resistor each for gate and substrate nodes.

• Journal of Ocean Engineering and Technology
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• v.31 no.2
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• pp.170-176
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• 2017

In this paper, we propose an underwater localization scheme through the fusion of an inertial navigation system (INS) and the received signal strength (RSS) of electromagnetic (EM) wave sensors to guarantee precise localization performance with high sampling rates. In this localization scheme, the INS predicts the pose of the unmanned underwater vehicle (UUV) by dead reckoning at every step, and the RF sensors corrects the UUV position functions using the Earth-fixed reference when the UUV is located in underwater wireless sensor networks (UWSN). The localization scheme and state modeling were conducted in the extended Kalman filter framework, and UUV localization experiments were conducted in a basin environment. The scheme achieved reliable localization accuracy during long-term navigation, demonstrating the feasibility of exploiting EM wave attenuation as Earth-fixed reference sensors.

• Journal of Advanced Navigation Technology
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• v.8 no.1
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• pp.73-80
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• 2004

In the case of Non-Line-of-Sight (NLOS), common telecommunication systems typically have Rayleigh distributed amplitude characteristics. However measurement result of Ultra Wideband (UWB) Multi-Band Orthogonal Frequency Division Multiplexing (MB-OFDM) system which is proposed as one of candidate standard in IEEE 802. 15. 3a for Wireless Personal Area Network (WPAN) shows that it has independent log normal fading in each cluster as well as in each ray within the cluster. Based on this clustering phenomenon observed, MB-OFDM channel model derived from Saleh-Valenzuela model with a couple of slight modifications. In this paper, channel remodeling for RF frequency hopping in MB-OFDM system is achieved, and performances of MB-OFDM system for each channel mode and data rate are verified using modified channel model.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.11 no.5
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• pp.1702-1707
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• 2010

As quantities of the data that transmitting by the wireless are more increased, the interest and application are extending about 802.11n that uses by combination two existing 20MHz wireless LAN Channel. 802.11n use dual band of 2.4GHz band and 5.8GHz. So this is expected in mass wireless transmission method because of interference evasion effect in compliance with the radio communication of existing 2GHz neighborhood band. Like this 802.11n uses the radio as well and transmits information there is not only a possibility of undergoing an influence in radio wave environment of circumference. Specially the interior environment and outdoor environment is a possibility of saying that will be defined with each other different modeling as affects in radio communication is different. In this paper, we'll compare the influence to RF feature (802.11n) by (Indoor/Outdoor) environment difference through compared with 802.11n RF feature and Network feature in (Indoor/Outdoor) environment and also examine the correlation between RF feature and Network feature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.11a
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• pp.85-88
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• 1995

In this report the large-signal RF performance of GaN MESFETs at different operating temperatures is investigated using a harmonic balance modeling technique. The predicted device performance calculated by the large-si anal model of a GaN FET is shown to be in good agreement with experimen tar data. It is demonstrated that the optimal RF performance of a GaN MESFET amplifier is achieved by balancing the input impedence for a optimized de sign. A GaN MESFET with the optimized design is predicted to produce maximum RF output power of about 4W/mm and 1W/mm at room temperature and 773 K, respectively. The device produces a peak Power-Added Efficiency (PAE) of 52% and 32% at the two temperatures.

• Journal of Sensor Science and Technology
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• v.20 no.3
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• pp.145-150
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• 2011

In this paper, we designed a tunable microstrip patch antenna using RF MEMS switches. The design and simulation of the antenna were performed using a high frequency structure simulator(HFSS). The antenna was designed for use in the ISM band and either operates at 2.4 GHz or 5.7 GHz achieving -10 dB return-loss bandwidths of 20 MHz and 180 MHz, respectively. In order to obtain high efficiency and improve the ease of integration, a high resistivity silicon(HRS) wafer on a glass substrate was used for the antenna. The antenna achieved high gains: 8 dB at 5.7 GHz and 1 dB at 2.4 GHz. The RF MEMS DC contact switches were simulated and analyzed using ANSYS software.