• Proceedings of the Materials Research Society of Korea Conference
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• 1996.05a
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• pp.33-33
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• 1996

• Proceedings of the Materials Research Society of Korea Conference
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• 2006.05a
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• pp.23.2-23.2
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• 2006

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.5
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• pp.905-909
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• 2007

Crystalline and micro-structural characteristics of ZnO thin films which were deposited on p-Si(100) with cooling naturally down of pre-heated substrate during RF magnetron sputter deposition, were investigated by XRD and SEM in this paper. The film which was prepared on the substrate which was pre-heated to $400^{\circ}C$ before deposition and then cooled naturally down during deposition, showed the most outstanding c-axis preferred orientation. The ZnO thin film having the best crystalline result were applied to SMR type FBAR device and resonance properties of the device were investigated by network analyzer. It showed that resonance frequency was 2.05 GHz, return loss was -30.64 dB, quality factor was 3169 and electromechanical coupling factor was 0.4 %. This deposition method would be very useful for application of surface acoustic wave filter or film bulk acoustic wave resonator.

• Journal of Surface Science and Engineering
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• v.52 no.2
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• pp.84-89
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• 2019

We fabricated durable anti-reflective(AR) layer with silica globular coating on polymer by two steps. Firstly, nano-protrusions of polymer were formed by plasma etching known as R.I.E(reactive ion etching) process. Secondly, silica globular coating was deposited on polymer nano-protrusions for mechanically protective and optically enhancing AR layers by RF magnetron sputter. And then durable antireflective polymers were synthesized adjusting plasma power and time, working pressures of RIE and RF sputtering processes. Consequently, we acquired the average transmission (94.10%) in the visible spectral range 400-800 nm and the durability of AR layer was verified to sustain its transmission until 5,000 numbers by rubber test at a load of 500 gf.

• Journal of the Korean Ceramic Society
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• v.34 no.12
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• pp.1227-1234
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• 1997

ZnO thin films were prepared by rf-magnetron sputter at various conditions. Crystallinity, microstructure, chemical composition, and optical composition, and optical properties of the films were investigated as functions of substrate temperature (R. T.-50$0^{\circ}C$) an sputter gas (O2/Ar=0-50%). ZnO thin films grown at 50$0^{\circ}C$ with sputter gas of pure argon as well as at R. T. with sputter gas of a mixture of argon & oxygen(O2/Ar=2%) exhibit a strong tendency of (002) preferred orientation, compared with a considerable random orientation at the other conditions. The thin films with (002) preferred orientation has a chemical stoichiometry of Zn/O-1.01, a band gap of 3.3eV, and a packing density of 98% respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.9
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• pp.798-807
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• 2002

ZnO thin films on Si wafer were deposited by RF magnetron reactive sputter with various RF power, chamber pressure, argon/oxygen gas ratios ana substrate temperatures. Crystallinities, surface morphologies, and electrical properties of the films were investigated by XRD, AFM, RBS, and electrometer(keithley 617). ZnO films showed a strong c-axis preferred orientation. Surface roughness and resistivity were changed by the argon/oxygen gas ratio. The minimum surface roughness of 12${\AA}$ and maximum resistivity of $10^8\Omega cm$ were achieved at Ar/O$O_2$=0/100.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.6
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• pp.481-486
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• 2001

ZnO thin films on glass substrate were depostied by RF magnetron reactive sputter with various argon/oxygen gas ratios and substrate temperatures. Crystallinities, surface morphologies, chemical compositions, and electrical properties of the films were investigated by XRD, SEM, XPS and electrometer(keithley 617). All films showed a strong preferred orientation along the c-axis on glass substrate, and the chemical stoichiometry was obtained at Ar/O$_2$.=50/50. The propagation velocity of ZnO SAW filter was about 2,590 m/sec and insertion loss was a minimum value of abut -21dB.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.151-154
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• 1999

ZnO thin films on glass substrate were deposited by RF magnetron reactive sputter with various argodoxygen gas ratios and substrate temperatures. Crystallinities, surface morphologies, chemical compositions, and electrical properties of the films were investigated by XRD, SEM, XPS and electrometer(keith1ey 617). All films showed a strong prefered orientation along the c-axis on glass substrate, and the chemical stoichiometry was obtained at Ar/$O_2$=50/50. The propagation velocity of ZnO SAW filter was about 2, 590 dsec and insertion loss was a minimum value of about -21dB.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.12
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• pp.560-564
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• 2006

ZnO thin films were prepared by RF magnetron sputter deposition on p-Si(100) wafer with various cooling rates of substrate temperature such as the substrates were pre-heated to $400^{\circ}C$ before the deposition and then cooled down naturally or slowly to $300^{\circ}C,\;200^{\circ}C,\;100^{\circ}C$, and R.T. by the temperature controller during the deposition. Crystalline and micro-structural characteristics of the films were investigated by XRD and SEM. ZnO films which cooled down naturally or slowly by the temperature controller during the deposition, especially the film were deposited with cooling down from $400^{\circ}C\;to\;200^{\circ}C$ slowly. showed the most outstanding c-axis preferred orientation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.3
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• pp.277-283
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• 2009

In this paper, aluminum doped zinc oxide (ZnO:Al) thin films on plastic substrate such as poly carbonate (PC), polyethylene terephthalate (PET) were prepared by RF magnetron sputtering method for flexible solar cell applications. Effects of the sputter pressure on the structural, electrical and optical properties were investigated. The crystallinity and the degree of the (002) orientation were deteriorated with increasing the sputter pressure. When the sputter pressure was higher, the conductivity of ZnO:Al films was improved because of the high carrier concentration and the Hall mobility. High quality ZnO:Al films with resistivity as low as $1.9{\times}10^{-3}{\Omega}-cm$ and the optical transmittance over 80 % in the visible region have been obtained on PC substrate at 2 mTorr.