• Title/Summary/Keyword: RF Integrated Circuit

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Study on RF characteristics of voltage-controlled artificial transmission line employing periodically arrayed diodes for application to highly miniaturized wireless communication systems (초소형 무선 통신 시스템에서의 응용을 위한 주기적으로 배열된 다이오드를 이용한 전압제어형 전송선로의 RF 특성에 관한 연구)

  • Kim, Soo-Jeong;Kim, Jeong-Hoon;Jeong, Jang-Hyeon;Yun, Young
    • Journal of Advanced Marine Engineering and Technology
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    • v.41 no.1
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    • pp.70-75
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    • 2017
  • In this paper, we studied the RF characteristics of a voltage-controlled artificial transmission line employing periodically arrayed diodes for application to highly miniaturized wireless communication systems on an MMIC (monolithic microwave integrated circuit). According to the results, the novel voltage-controlled artificial transmission line employing periodically arrayed diodes exhibited a short wave length, which was only 35.2% that of the conventional transmission line, owing to increasing capacitance. In addition, it's effective permittivity and effective propagation constant exhibited considerably higher values than those of the conventional transmission line. Furthermore, attenuation constant of the voltage-controlled artificial transmission line was far higher than that of the conventional transmission line. Using the closed-form equation, we theoretically analyzed the equivalent circuit of the voltage-controlled artificial transmission line.

A 900MHz CMOS RF Power Amplifier with Digitally Controllable Output Power (Digital 방식으로 출력 전력을 조절할 수 있는 900MHz CMOS RF 전력 증폭기)

  • 윤진한;박수양;손상희
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.17 no.2
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    • pp.162-170
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    • 2004
  • A 900MHz CMOS RF power amplifier with digitally controllable output power has been proposed and designed with 0.6${\mu}{\textrm}{m}$ standard CMOS technology. The designed power amplifier was composed of digitally controllable switch mode pre-amplifiers with an integrated 4nH spiral inductor load and class-C output stage. Especially, to compensate the 1ow Q of integrated spiral inductor, cascode amplifier with a Q-enhancement circuit is used. It has been shown that the proposed power control technique allows the output power to change from almost 3dBm to 13.5dBm. And it has a maximum PAE(Power Added Efficiency) of almost 55% at 900MHz operating frequency and 3V power supply voltage.

A study on the design of switch module for devices (세라믹 적층형 스위치 모듈 설계에 관한 연구)

  • Kim, In-Sung;Song, Jae-Sung;Min, Bok-Ki
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.11a
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    • pp.431-434
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    • 2004
  • The design, simulation, modeling and measurement of a RF switch module for GSM applications were presented in this paper. switch module were simulated by ADS and constructed using a LTCC multi-layer switching circuit and integrated low pass filter, designed to operate in the GSM band. Insertion and return losses at 900 MHz of the low pass filters were designed to lower than 0.3 dB and higher than 12.7 dB respectively. The switch module constructed, contained 10 embedded passives and 3 surface mounted components integrated on $4.6{\times}4.8{\times}1.2$ m volume, 6-layer integrated circuit. The insertion loss of switch module at m MHz were around 11 dB.

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A 3-5 GHz Non-Coherent IR-UWB Receiver

  • Ha, Min-Cheol;Park, Young-Jin;Eo, Yun-Seong
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.8 no.4
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    • pp.277-282
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    • 2008
  • A fully integrated inductorless CMOS impulse radio ultra-wideband (IR-UWB) receiver is implemented using $0.18\;{\mu}m$ CMOS technology for 3-5 GHz application. The UWB receiver adopts the non-coherent architecture, which removes the complexity of RF architecture and reduces power consumption. The receiver consists of inductorless differential three stage LNA, envelope detector, variable gain amplifier (VGA), and comparator. The measured sensitivity is -70 dBm in the condition of 5 Mbps and BER of $10^{-3}$. The receiver chip size is only $1.8\;mm\;{\times}\;0.9\;mm$. The consumed current is 15 mA with 1.8 V supply.

A Design of MMIC Mixer for I/Q Demodulator of Non-contact Near Field Microwave Probing System (비접촉 마이크로웨이브 프루브 시스템의 I/Q Demodulator를 위한 MMIC Mixer의 설계)

  • Ryu, Keun-Kwan;Kim, Sung-Chan
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.16 no.5
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    • pp.1023-1028
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    • 2012
  • A MMIC (Monolithic Microwave Integrated Circuit) mixer chip using the Schottky diode of an GaAs p-HEMT process has been developed for the I/Q demodulator of non-contact near field microwave probing system. A single balanced mixer type is adopted to achieve simple structure of the I/Q demodulator. A quadrature hybrid coupler and a quarter wavelength transmission line for 180 degree hybrid are realized with lumped elements of MIM capacitor and spiral inductor to reduce the mixer chip size. According to the on-wafer measurement, this MMIC mixer covers RF and LO frequencies of 1650MHz to 2050MHz with flat conversion loss. The MMIC mixer with miniature size of $2.5mm{\times}1.7mm$ demonstrates conversion loss below 12dB for both variations of RF and LO frequencies, LO-to-IF isolation above 43dB and RF-to-IF isolation above 23dB, respectively.

A Highly Integrated HBT Downconverter MMIC for Application to One-chip RF tranceiver solution (One-chip 고주파 단말기에의 응용을 위한 고집적 HBT 다운컨버터 MMIC)

  • Yun, Young
    • Journal of Advanced Marine Engineering and Technology
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    • v.31 no.6
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    • pp.777-783
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    • 2007
  • In this work, a highly integrated downconverter MMIC employing HBT(heterojunction bipolar transistor) was developed for application to one chip tranceiver solution of Ku-band commercial wireless communication system. The downconverter MMIC (monolithic microwave integrated circuit) includes mixer filter. amplifier and input/output matching circuit. Especially, spiral inductor structures employing SiN film were used for a suppression of LO and its second harmonic leakage signals. Concretely, they were properly designed so that the self-resonance frequency was accurately tuned to LO and its second harmonic frequency, and they were integrated on the downconverter MMIC.

The study on Characteristics and Fabrication of L-C Library components (L-C Library 박막 소자의 제조와 특성에 관한 연구)

  • Kim, In-Sung;Min, Bok-Ki;Song, Jae-Sung
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.07b
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    • pp.861-863
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    • 2003
  • In this work, the preparations and characteristics of capacitors and inductors for RF IC as a integrated devices are investigated. These kinds of capacitors and inductors can be applicable to the passive components utilized in voltage controlled oscillator(VCO), low noise amplifier(LAN), mixer and synthesizer for mobile telecommunication of radio frequency band(900 MHz to 2.2GHz), and in a library of monolithic microwave integrated circuit(MMIC). The results show that these inductors and capacitors array for RF IC may be applicable to the RF IC passive components for mobile telecommunication.

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The Design of CMOS Multi-mode/Multi-band Wireless Receiver

  • Hwang, Bo-Hyeon;Jeong, Jae-Hun;Yu, Chang-Sik
    • Proceedings of the IEEK Conference
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    • 2006.06a
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    • pp.615-616
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    • 2006
  • Nowadays, the need of multi-mode/multi-band transceiver is rapidly increasing, so we design a direct conversion RF front-end for multi-mode/multi-band receiver that support WCDMA/CDMA2000/WIBRO standard. It consists of variable gain reconfigurable LNA and single input double balanced Mixer and complementary differential LC Oscillator. The circuit is implemented in 0.18 um RF CMOS technology and is suitable for low-cost mode/multi-band.

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On-Chip Design-for-Testability Circuit for RF System-On-Chip Applications (고주파 시스템 온 칩 응용을 위한 온 칩 검사 대응 설계 회로)

  • Ryu, Jee-Youl;Noh, Seok-Ho
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.15 no.3
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    • pp.632-638
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    • 2011
  • This paper presents on-chip Design-for-Testability (DFT) circuit for radio frequency System-on-Chip (SoC) applications. The proposed circuit measures functional specifications of RF integrated circuits such as input impedance, gain, noise figure, input voltage standing wave ratio (VSWRin) and output signal-to-noise ratio (SNRout) without any expensive external equipment. The RF DFT scheme is based on developed theoretical expressions that produce the actual RF device specifications by output DC voltages from the DFT chip. The proposed DFT showed deviation of less than 2% as compared to expensive external equipment measurement. It is expected that this circuit can save marginally failing chips in the production testing as well as in the RF system; hence, saving tremendous amount of revenue for unnecessary device replacements.

BCI Probe Emulator Using a Microstrip Coupler (마이크로스트립 커플러 구조를 이용한 BCI 프로브 Emulator)

  • Jung, Wonjoo;Kim, SoYoung
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.25 no.11
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    • pp.1164-1171
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    • 2014
  • Bulk Current Injection(BCI) test is a method of injecting current into Integrated Circuit(IC) using a current injection probe to qualify the standards of Electromagnetic Compatibility(EMC). This paper, we propose a microstrip coupler structure that can replace the BCI current injection probe that is used to inject a RF noise in standard IEC 62132-part 3 documented by International Electrotechnical Commission. Conventional high cost BCI probe has mostly been used in testing automotive ICs that use high supply voltage. We propose a compact microstrip coupler which is suitable for immunity testing of low power ICs. We tested its validity to replace the BCI injection probe from 100 MHz to 1,000 MHz. We compared the power[dBm] that is needed to generate the same level of noise between current injection probe and microstrip coupler by sweeping the frequency. Results show that microstrip coupler can inject the same level of noise into ICs for immunity test with less power.