• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.27 no.2
• /
• pp.65-69
• /
• 2017

AlN single crystal was thermally treated at 1600, 1700 and $1800^{\circ}C$ in the ambient pressure of under 100 torr. AlN single crystal was obtained by PVT (Physial Vapor Transport) method using by a facility having a growth part which was heated by RF (Radio Frequency) induction heating. The single crystal specimens surface was evaluated by optical microscope and it was recognized that their morphology was varied with the heat treatment temperature and a set ambient pressure. In this report, the optical microscopic results were reported. According to the increase of temperature the crystal surface was etched thermally. It was evaluated by appearance of small pits on the crystal surface.

• Transactions on Electrical and Electronic Materials
• /
• v.14 no.5
• /
• pp.242-245
• /
• 2013

Sn-doped $In_2O_3$ (ITO) thin films were prepared by radio frequency magnetron sputtering without intentional substrate heating on bare glass and $TiO_2$-deposited glass substrates to investigate the effect of a $TiO_2$ buffer layer on the electrical and optical properties of ITO films. The thicknesses of $TiO_2$ and ITO films were kept constant at 5 and 100 nm, respectively. As-deposited ITO single layer films show an optical transmittance of 75.9%, while $ITO/TiO_2$ bi-layered films show a lower transmittance of 76.1%. However, as-deposited $ITO/TiO_2$ films show a lower resistivity ($9.87{\times}10^{-4}{\Omega}cm$) than that of ITO single layer films. In addition, the work function of the ITO film is affected by the $TiO_2$ buffer layer, with the $ITO/TiO_2$ films having a higher work-function (5.0 eV) than that of the ITO single layer films. The experimental results indicate that a 5-nm-thick $TiO_2$ buffer layer on the $ITO/TiO_2$ films results in better performance than conventional ITO single layer films.

• Proceedings of the KIEE Conference
• /
• 2009.07a
• /
• pp.1338_1339
• /
• 2009

Dye-sensitized solar cell (DSC) consists of photo electrode, counter electrode and electrolyte. Photo electrode has titanium oxide layer with dye molecule to create electrons. And counter electrode is made of one layer that has catalytic ability for redox system such as the iodide/triiodide couple. Most DSC researchers use platinum as catalyst on counter electrode because platinum has good catalytic ability and conductivity. Platinum is doped on fluorine-doped tin oxide glass with different methods such as sputtering method, electrochemical method and so on. In this paper, we deposit platinum on counter electrode glass with two methods. One is the radio frequency (RF) sputtering method and the other is the chemical method with heating treatment. Finally, we compare the photovoltaic characteristics of DSCs that are assembled using two different counter electrodes.

• Bulletin of the Korean Chemical Society
• /
• v.34 no.3
• /
• pp.823-826
• /
• 2013

A low-${\varepsilon}$ solid-state NMR(Nuclear Magnetic Resonance) probe was developed for the spectroscopic analysis of two-dimensional $^{15}N-^1H$ heteronuclear dipolar coupling in dilute membrane proteins oriented in hydrated and dielectrically lossy lipid environments. The system employed a 800 MHz narrow-bore magnet. A solenoid coil strip shield was used to reduce deleterious RF sample heating by minimizing the conservative electric fields generated by the double-tuned resonator at high magnetic fields. The probe's design, construction, and performance in solid-state NMR experiments at high magnetic fields are described here. Such high-resolution solid-state NMR spectroscopic analysis of static oriented samples in hydrated phospholipid bilayers or bicelles could aid the structural analysis of dilute biological membrane proteins.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.11a
• /
• pp.611-615
• /
• 2004

In recent, there have been several developments in lamp technology that promise savings in electrical power consumption and improved quality of the lighting space. Above all, Electrodeless fluorescent lamp is the removal of internal electrodes and heating filaments that are a light-limiting factor of conventional fluorescent lamps. The electrodeless fluorescent lamp is intended as a high efficacy replacement for the incandescent reflector lamp in many applications. Therefore, the electrodeless fluorescent lamps is substantially higher than that of conventional fluorescent lamps and last up to 60,000 hours. In this paper, electron temperature and electron density were measured in a radio-frequency inductively coupled plasma using a Langmuir probe method for emission characteristics. Measurement was conducted in an argon discharge for pressure from 10 [mTorr] and input RF power 100 [W] to 150 [W]. As for the electron density, a electron temperature was more distinguished for a emission characteristic. The results of ideal may contribute to systematic understanding of a electrodeless fluorescent lamps of emission characteristics.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.11a
• /
• pp.276-276
• /
• 2008

Transparent and conducting indium tin oxide (ITO) and ITO/Nickel/ITO(INI) multilayered films were prepared on glass substrates by a magnetron sputtering without intentional substrate heating. The RF(13.56MHz) and DC power were applied to ITO and Nickel target, respectively. The thickness of ITO, Ni and ITO films were kept constantly at 50, 5 and 45 nm. In order to consider the effect of post deposition vacuum annealing in vacuum on the physical and optoeletrical properties of INI films, optical transmittance, electrical resistivity, crystallinity of the films were analyzed. From the observed result, it may conclude that the optoelectrical properties of the INI films were dependent on the post deposition annealing. For the INI films annealed at $300^{\circ}C$, the films have a polycrystalline structure with (110), (200), (210), (211) and (300). The resistivity of the films were $4.0\times10^{-4}{\Omega}cm$ at room temperature. As the annealing($300^{\circ}C$), resistivity decreased to $2.8\times10^{-4}{\Omega}cm$. And also the optical transmittance decreased from 79 to 70 % at 550nm.

• Journal of the Microelectronics and Packaging Society
• /
• v.6 no.3
• /
• pp.25-35
• /
• 1999

LTCC (Low Temperature Cofired Ceramic) or LTCC-M (Low Temperature Cofired ceramic on Metal) technology is one of MCM-C (Multichip Module on Ceramic) technologies and becomes to be widely used in consumer, RF and automotive electronics. As green sheets for LTCC are cofired below $1000^{\circ}C$ in comparison with those for HTCC (High Temperature Cofired Ceramic), high conductivity metal traces such as gold, silver and copper can be used. The dimensional stability in LTCC-M technology enables embedded passives to be integrated inside modules, which enhances the electrical performance and increases the reliability of the modules. Coefficient of thermal expansion and dielectric constant can be controlled by changing composition and heating profile for cofiring. In this technical review, LTCC and LTCC-M technologies are introduced and advantages of those technologies are explained.

• Korean Journal of Materials Research
• /
• v.17 no.11
• /
• pp.618-621
• /
• 2007

Chromium nitride (CrN) films were deposited on silicon substrate by RF magnetron sputtering assisted by inductive coupled nitrogen plasma without intentional substrate heating. Films were deposited with different levels of bombarding energy by nitrogen ions $(N^+)$ to investigate the influence of substrate bias voltage $(V_b)$ on the growth of CrN thin films. XRD spectra showed that the crystallographic structure of CrN films was strongly affected by substrate bias voltage. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) results showed that surface roughness and grain size of the CrN films varied significantly with bias voltage. For - 80 $V_b$ depositions, the CrN films showed bigger grain sizes than those of other bias voltage conditions. The lowest surface roughness of 0.15 nm was obtained from the CrN films deposited at .130 $V_b$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2007.06a
• /
• pp.320-320
• /
• 2007

Nowadays, ZnO thin films are investigated as transparent conductive electrodes for use in optoelectronics devices including flat displays, thin films transistors, solar cells because of their unique optical and electrical properties. For the use as transparent conductive electrodes, a film has to have low resistivity, high absorption in the ultra violent light region and high optical transmission in the visible region. Different technologies such as electron beam evaporation, chemical vapor deposition, laser evaporation, DC and RF magnetron sputtering and have been reported to produce thin films of ZnO with adequate performance for applications. However, highly transparent and conductive doped-ZnO thin films deposited by a metal-organic decomposition method have not been reported before. In this work, the effect of dopant concentration, heating treatment and annealing in areducing atmosphere on the structure, morphology, electrical and optical properties of ZnO thin films deposited on glass substrates by a Sol-gel method are investigated.

• Journal of the Korean Society for Heat Treatment
• /
• v.29 no.5
• /
• pp.216-219
• /
• 2016

$SnO_2$ single layer films (100 nm thick) and 2 nm thick Ni intermediated $SnO_2$ films were deposited on glass substrate by RF and DC magnetron sputtering without intentional substrate heating and then the influence of the Ni interlayer on the electrical and optical properties of the films were investigated. As deposited $SnO_2$ single layer films show the optical transmittance of 82.6% in the visible wavelength region and a resistivity of $6.6{ \times}10^{-3}{\Omega}cm$, while $SnO_2/Ni/SnO_2$ trilayer films show a lower resistivity of $2.7{ \times}10^{-3}{\Omega}cm$ and an optical transmittance of 76.3% in this study. Based on the figure of merit, it can be concluded that the intermediate Ni thin film effectively enhances the opto-electrical performance of $SnO_2$ films for use as transparent conducting oxides in flexible display applications.