• Journal of electromagnetic engineering and science
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• 제4권1호
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• pp.30-36
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• 2004

We determined equivalent circuit parameters of a 1.5 cell S-band RF gun cavity from the resonant characteristics of its decoupled cavities(half cell and full cell) using the code SUPERFISH. Equivalent circuit parameters of the 1.5 cell RF gun cavity resonated in the 0-mode were obtained easily from the circuit parameters of each decoupled cavities. In order to obtain equivalent circuit parameters for the $\pi$ -mode cavity, we calculated the differences of the resonant frequencies and the equivalent resistances between the 0- and $\pi$ -modes with slight variations of the radius and thickness of the coupling iris. From those differences, we obtained R/Q value and equivalent resistance of the $\pi$ -mode, which are directly related to the equivalent circuit parameters of the coupled cavity. Using calculated R/Q value, we can express equivalent inductance, capacitance and resistances of the RF gun cavity resonated in the $\pi$ -mode, which can be useful for analyzing coupled cavities in a steady state.

• Transactions on Electrical and Electronic Materials
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• 제14권2호
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• pp.86-89
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• 2013

Dye-sensitized solar cells have a FTO/$TiO_2$/Dye/Electrode/Pt counter electrode structure, yet more than a 10% electron loss occurs at each interface. A passivating layer between the $TiO_2$/FTO glass interface can prevent this loss of electrons. In theory, ZnO has excellent electron collecting capabilities and a 3.4 eV band gap, which suppresses electron mobility. FTO glass was coated with ZnO thin films by RF-magnetron sputtering; each film was deposited under different $O_2$:Ar ratios and RF-gun power. The optical transmittance of the ZnO thin film depends on the thickness and morphology of ZnO. The conversion efficiency was measured with the maximum value of 5.22% at an Ar:$O_2$ ratio of 1:1 and RF-gun power of 80 W, due to effective prevention of the electron recombination into electrolytes.

• Nuclear Engineering and Technology
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• 제38권8호
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• pp.779-784
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• 2006

The design, manufacturing process, and first operating test of a high power RF source for a proton accelerator are described. A klystron amplifier system has been developed for operation at 700 MHz, 1 MW and is composed of a triode type electron gun, six cavities, an RF output window, a beam collector, and an electromagnet. The prototype klystron was constructed and tested at a reduced duty to produce the designed output RF power.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2008년도 제35회 하계학술대회 초록집
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• pp.201-201
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• 2008

• 대한전자공학회논문지SD
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• 제42권2호
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• pp.9-14
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• 2005

본 논문에서는bulk dynamic threshold voltage MOSFET(B-DTMOS)와 bulk MOSFET(B-MOS)에서 hot carrier 현상으로 인한 RF 성능 저하를 비교하였다. Normal 및 moderate 모드에서 B-DTMOS의 차단주파수 및 최소잡음지수의 열화가 B-MOS 소자 보다 심하지 않음을 알 수 있었다. 실험 견과로부터 hot carrier에 의한 RF 성능 저하가 DC 특성 열화 보다 심함을 알 수 있었다. 그리고 처음으로 hot carrier 현상으로 인한 B-DTMOS 소자의 RF 전력 특성 저하를 측정하였다.

• 한국표면공학회지
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• 제41권5호
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• pp.214-219
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• 2008

Indium tin oxide (ITO) films were deposited on PET substrate by RF superimposed DC magnetron sputtering using ITO (doped with 10 wt% $SnO_2$) target. Substrate temperature was maintained below $750^{\circ}C$ without intentionally substrate heating during the deposition. The discharge voltage of DC power supply was decreased from 280 V to 100 V when superimposed RF power was increased from 0 W to 150 W. The electrical properties of the ITO films were improved with increasing of superimposed RF power. In the result of cyclic bending test, relatively high mechanical property was obtained for the ITO film deposited with RF power of 75 W under DC current of 0.75 A which could be attributed to the decrease of internal stress caused by decrease in both deposition rate and plasma impedance.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.477-480
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• 2004

Ga doped zinc oxide films (ZnO:Ga) were deposited on glass substrate by RF magnetron sputtering from a ZnO target mixed with $Ga_O_3$. The effects of RF discharge power on the electrical, optical and structural properties were investigated experimentally. The structural and electrical properties of the film are highly affected by the variation of RF discharge power. The lowest electrical resistivity of $4.9{\times}10^{-4}\;\Omega-cm$ were obtained with the film deposited from 3 wt% of $Ga_2O_3$ doped target and at 200 W in RF discharge power. The transmittance of the 900 nm thin film was 91.7% in the visible waves. The effect of annealing on the as-deposited film was also studied to improve the electrical resistivity of the ZnO:Ga film.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2004년도 하계학술대회 논문집 B
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• pp.1435-1438
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• 2004

ITS 데이터 통신체계는 도로상의 현장설비(차량 검지기. 도로전광표지, 번호인식장치 등)와 센터를 1:1로 직접 접속하는 방식(P2P)으로 구성하고 있다. P2P 데이터 통신은 안정적인 데이터 전송을 유지시켜주지만, 통신비용의 증가 원인이 되고 있다. 따라서, 본 연구는 1:1 유선통신 구성으로 인한 통신비를 줄이기 위해 RF 모듈을 사용하여 1:N 구성으로 통신비용을 줄이는 방법을 제안하였고, 적용 가능성을 확인하기 위해 국도 38호선 평택$/sim$안중구간(약 19km)에 대해서 RF 장치를 설치한 후 데이터를 수집하였다. 적용한 RF 통신은 ISM 밴드의 2.4GHz 통신모듈을 사용하였고. 유선통신데이터와 통신 품질을 비교하였다. 데이터 품질은 기존의 1:1 구성 방식인 유선 전용회선에 의한 데이터 (기준치)와 제안한 RF 통신의 데이터를 비교하는 과정이며, 이를 통해 RF 통신의 현장 적용 가능성을 검토하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.169-170
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• 2007

In this paper we report upon an investigation into the effect of sputter pressure and RF power on the electrical properties of Gallium doped zinc oxide (GZO) film. GZO films were deposited on glass substrate without substrate temperature by RF magnetron sputtering from a ZnO target mixed with 5 wt% $Ga_2O_3$. Argon gas pressure and RF power were in the range of 1~11 mTorr, and 50~100 W, respectively. However, the resistivity of the film was strongly influenced by the sputter pressure and RF power. We were able to achieve as low as $1.5{\times}10^{-3}\;{\Omega}cm$, without substrate temperature.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.939-942
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• 2004

Al doped Zinc Oxide(ZnO:Al) films, which is widely used as a transparent conductor in optoelectronic devices such as solar cell, liquid crystal display, plasma display panel, thermal heater, and other sensors were Prepared by using the capacitively coupled RF magnetron sputtering method. In this paper the effect of RF discharge power on the electrical, optical and structural properties were investigated experimentally. The results show that the structural and electrical properties of the film are highly affected by the variation of RF discharge power. The optimum growth conditions were obtained for films doped with 2 wt% of $Al_2O_3$ and 200 W in RF discharge power, which exhibit a resistivity of $10.4{\times}10^{-4}{\Omega}-cm$ associated with a transmittance of 89.66 % for 1000nm in films thickness in the wavelength range of the visible spectrum.