Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
권호 표지

Microstructure of ZnO:Ga Thin Films by RF magnetron sputtering

RF 스퍼터링법에 의한 ZnO:Ga 박막의 미세구조

  • 김병섭 (경성대학교 전기전자공학과) ;
  • 이성욱 (경성대학교 전기전자공학과) ;
  • 임동건 (충주대학교 전자공학과) ;
  • 박민우 (경성대학교 신소재공학과) ;
  • 곽동주 (경성대학교 전기전자공학과)
  • Published : 2004.11.11
Download PDF
⟨ Previous Next ⟩

Abstract

Ga doped zinc oxide films (ZnO:Ga) were deposited on glass substrate by RF magnetron sputtering from a ZnO target mixed with $Ga_O_3$. The effects of RF discharge power on the electrical, optical and structural properties were investigated experimentally. The structural and electrical properties of the film are highly affected by the variation of RF discharge power. The lowest electrical resistivity of $4.9{\times}10^{-4}\;\Omega-cm$ were obtained with the film deposited from 3 wt% of $Ga_2O_3$ doped target and at 200 W in RF discharge power. The transmittance of the 900 nm thin film was 91.7% in the visible waves. The effect of annealing on the as-deposited film was also studied to improve the electrical resistivity of the ZnO:Ga film.

Keywords