• 제목/요약/키워드: RF Frequency

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공용 데이터링크 RF 송수신기 설계 및 구현 (RF Transceiver Design and Implementation for Common Data Link)

  • 김주연
    • 전기전자학회논문지
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    • 제19권3호
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    • pp.371-377
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    • 2015
  • 본 논문은 공용 데이터링크용 RF 송수신기 설계 및 제작에 관한 것이다. 송신부는 주파수 상향변환부, 전력증폭부, 듀플렉서로 구성된다. 수신부는 듀플렉서, 저잡음증폭부, 주파수 하향변환부로 구성된다. 최대 전송 거리, 수신 감도 등의 전기적 특성과 온도 특성을 충족하도록 설계되었다. RF 송수신기의 요구 규격을 만족하기위해 모델링 및 시뮬레이션을 이용하여 설계 및 구현하였다. 송신 출력과 잡음 지수는 각각 38.58dBm 및 5.5dB로 측정되었다. 전기적 특성 시험 및 온도 특성 시험으로 요구사항을 모두 만족함을 확인하였다.

Radio environment maps: The survey of construction methods

  • Pesko, Marko;Javornik, Tomaz;Kosir, Andrej;Stular, Mitja;Mohorcic, Mihael
    • KSII Transactions on Internet and Information Systems (TIIS)
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    • 제8권11호
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    • pp.3789-3809
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    • 2014
  • Radio environment maps (REMs) and geolocation database represent an important source of information for the operation of cognitive radio networks, replacing or complementing spectrum sensing information. This paper provides a survey of methods for constructing the radio frequency layer of radio environment map (RF-REM) using distributed measurements of the signal levels at a given frequency in space and time. The signal level measurements can be obtained from fixed or mobile devices capable of sensing radio environment and sending this information to the REM. The signal measurements are complemented with information already stored in different REM content layers. The combined information is applied for estimation of the RF-REM layer. The RF-REM construction methods are compared, and their advantages and disadvantages with respect to the spatial distribution of signal measurements and computational complexity is given. This survey also indicates possible directions of further research in indirect RF-REM construction methods. It emphasizes that accurate RF-REM construction methods should in the best case support operation with random and clustered signal measurements, their operation should not be affected by measurements outliers, and it must estimate signal levels comparably on all RF-REM locations with moderate computational effort.

A 3 ~ 5 GHz CMOS UWB Radar Chip for Surveillance and Biometric Applications

  • Lee, Seung-Jun;Ha, Jong-Ok;Jung, Seung-Hwan;Yoo, Hyun-Jin;Chun, Young-Hoon;Kim, Wan-Sik;Lee, Noh-Bok;Eo, Yun-Seong
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제11권4호
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    • pp.238-246
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    • 2011
  • A 3-5 GHz UWB radar chip in 0.13 ${\mu}m$ CMOS process is presented in this paper. The UWB radar transceiver for surveillance and biometric applications adopts the equivalent time sampling architecture and 4-channel time interleaved samplers to relax the impractical sampling frequency and enhance the overall scanning time. The RF front end (RFFE) includes the wideband LNA and 4-way RF power splitter, and the analog signal processing part consists of the high speed track & hold (T&H) / sample & hold (S&H) and integrator. The interleaved timing clocks are generated using a delay locked loop. The UWB transmitter employs the digitally synthesized topology. The measured NF of RFFE is 9.5 dB in 3-5 GHz. And DLL timing resolution is 50 ps. The measured spectrum of UWB transmitter shows the center frequency within 3-5 GHz satisfying the FCC spectrum mask. The power consumption of receiver and transmitter are 106.5 mW and 57 mW at 1.5 V supply, respectively.

간섭제거기를 적용한 디지털 RF 시스템에 관한 연구 (A Study on Digital RF System with Interference Cancellation System)

  • 주지한;이상주
    • 한국전자파학회논문지
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    • 제20권12호
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    • pp.1252-1263
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    • 2009
  • 본 논문은 이동 통신 시스템에서 서비스 품질을 개선하고 기지국의 서비스 영역을 확장하기 위한 중계기 시스템 중 기존 RF 중계기가 가지고 있는 간섭 및 궤환 신호를 제거하기 위해 간섭 제거기를 적용한 디지털 RF 시스템에 관한 연구를 수행하였다. RF(Radio Frequency) 중계기에 DSP(Digital Signal Processing)와 FPGA(Field Programmable Gate Array)를 이용한 디지털 엔진을 탑재하여 간섭 및 궤환 신호를 제거하는 새로운 방식의 무선 중계기를 제안하였다. DSP와 FPGA로 이루어진 디지털 ICS(Interference Cancellation System) 엔진은 RF 회로와 일체형으로 설계되었으며, 디지털 플랫폼을 통해 하드웨어를 개발한 뒤 최적에 중계기 시스템에 적용하기 위해 일체형으로 설계 및 제작하였다. 논문에 적용된 간섭 및 궤환 신호 제거 기법으로는 LMS(Least Mean Square) 알고리즘을 적용한 적응형 IF(Intermediate Frequency) 방식을 적용하였으며, 개선된 수렴 속도와 성능을 가지게 되었다.

Discharge Characteristics of Large-Area High-Power RF Ion Source for Neutral Beam Injector on Fusion Devices

  • Chang, Doo-Hee;Park, Min;Jeong, Seung Ho;Kim, Tae-Seong;Lee, Kwang Won;In, Sang Ryul
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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    • pp.241.1-241.1
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    • 2014
  • The large-area high-power radio-frequency (RF) driven ion sources based on the negative hydrogen (deuterium) ion beam extraction are the major components of neutral beam injection (NBI) systems in future large-scale fusion devices such as an ITER and DEMO. Positive hydrogen (deuterium) RF ion sources were the major components of the second NBI system on ASDEX-U tokamak. A test large-area high-power RF ion source (LAHP-RaFIS) has been developed for steady-state operation at the Korea Atomic Energy Research Institute (KAERI) to extract the positive ions, which can be used for the NBI heating and current drive systems in the present fusion devices, and to extract the negative ions for negative ion-based plasma heating and for future fusion devices such as a Fusion Neutron Source and Korea-DEMO. The test RF ion source consists of a driver region, including a helical antenna and a discharge chamber, and an expansion region. RF power can be transferred at up to 10 kW with a fixed frequency of 2 MHz through an optimized RF matching system. An actively water-cooled Faraday shield is located inside the driver region of the ion source for the stable and steady-state operations of RF discharge. The characteristics and uniformities of the plasma parameter in the RF ion source were measured at the lowest area of the expansion bucket using two RF-compensated electrostatic probes along the direction of the short- and long-dimensions of the expansion region. The plasma parameters in the expansion region were characterized by the variation of loaded RF power (voltage) and filling gas pressure.

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4MHz I-PVD장치에서 정합회로를 이용한 플라즈마 제어 (Plasma control by tuning network modification in 4MHz ionized-physical vapor deposition)

  • 주정훈
    • 한국진공학회지
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    • 제8권1호
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    • pp.75-82
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    • 1999
  • 내부 삽입형 유도결합 플라즈마를 이온화원으로 하는 I-PVD장치를 이용하여 박막을 형성하는데 중요한 요소의 하나가 이온의 입사에너지이며, 이는 플라즈마 전위와 기판 전위의 차이에 의해서 결정된다. 이를 감소시킬 목적으로 안테나 여기 주파수를 4MHz의 중간주파수에서, 안테나의 정합 회로를 변형형, 부동형의 2가지로 변화시키고, 부동형에서는 바이어스 저항의 값을 가변시켰다. 그 결과 Ar 플라즈마에서 4MHz RF 전력 600 W에서 5 mTorr에서 30 mTorr의 넓은 압력 범위에서 5V 미만의 낮은 평균 플라즈마 전위와 60V의 안테나 전압을 얻었다. 또한 출력측에 설치한 RLC회로의 조절을 통해서 RF전력 500 W에서 RF 입력 및 출력단의 Rf 안테나 유기 전압을 50V의 아주 낮은 값으로 유지시킬 수 있었다. 이때의 안테나 및 플라즈마의 총 임피던스는 약 10$\Omega$이었으며, 리액턴스를 0.05$\Omega$수준으로 유지하였을 때 가장 낮은 전압을 얻었다.

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ESD Protection Circuits with Low-Voltage Triggered SCR for RF Applications

  • 김산홍;박재영;김택수
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2008년도 하계종합학술대회
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    • pp.24-25
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    • 2008
  • An Electrostatic discharge (ESD) protection has been a very important reliability issue in microelectronics, especially for RF (Radio Frequency) integrated circuits (ICs). This paper reviews design and analysis of on-chip ESD (electrostatic discharge) protection circuits for RF applications. Key issues in RF ESD protection, design methods, and RF ESD protection solutions are discussed.

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이득 스위칭 반도체 레이저에서 동작 파라메터에 대한 출력 펄스 폭의 의존성 (Dependence of pulse width on the operating parameters in a gain-switched semiconductor laser)

  • 이상훈;명승일;이명우;서동선
    • 전자공학회논문지D
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    • 제35D권4호
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    • pp.101-108
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    • 1998
  • We examine experimentally the dependence of output width on DC bias, RF power, and RF frequency in a gain-switched semiconductor laser. The optimum short pulses are obtained around threshold DC bias. The DC bias to generatoe shorter pulses decreases the RF power increases, whereas it increases to above threshold as the RF freqnecy increases. The pulse width becomes less sensitive to the variations of the DC bias, as the RF bias, or frquency increases.

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RF 전력증폭기용 고성능 실리콘 LDMOSFET (High Performance Silicon LDMOSFET for RF Power Amplifiers)

  • 신창희;김진호;권오경
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2003년도 하계종합학술대회 논문집 II
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    • pp.695-698
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    • 2003
  • This paper presents a Si power LDMOSFET for power amplifiers in the 1.8-2.2GHz frequency range for the base station of personal communication systems. To improve the cut-off frequency, the proposed Si power LDMOSFET has small gate to drain capacitance by shielding the electric fields with extended source electrode and forming the field oxide structure in drain region. The proposed Si power LDMOSFET can be used for a power amplifier and it has 32% of power added efficiency and 39.5dBm of output power when the supply voltage is 28V and the operating frequency is 1.9GHz.

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스펙트럼 분석기에 적용한 주파수 변환기의 설계 및 구현에 관한 연구 (A Study on the Design and mplementation of Frequency Converter applied to Spectrum Analyzer)

  • 이진성;송문규;김태회;박영철;차균현
    • 한국통신학회:학술대회논문집
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    • 한국통신학회 1991년도 추계종합학술발표회논문집
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    • pp.103-106
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    • 1991
  • Spectrum Analyzer is a useful measure instrument to display the distributed power of electrical signal as a function of frequency. It adopts the superheterodyne receiver, which mixes RF with L0 to output IF. So in this paper, two GHz-order microstrip low-pass filters, 2-section wilkinson power divider, and singly balanced diode mixer have been designed and implemented necessary to make the frequency converter applied to RF spectrum analyzer.