• Journal of Electrical Engineering and Technology
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• v.6 no.3
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• pp.408-413
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• 2011

In this paper, a real-coefficient approach to Adaptive Frequency Sampling (AFS) technique is developed for efficient equivalent circuit modeling of RF components. This proposed method is advantageous than the vector fitting technique and the conventional AFS method in terms of fewer samples leading to a lower order of a rational function on a given data and to a direct conversion to an equivalent circuit for PSPICE(Personal Simulation Program with Integrated Circuit Emphsis) simulation, respectively. To validate the proposed method, the distributed equivalent circuit of a presented multi-layered RF low-pass filter is obtained using the proposed real-coefficient AFS, and then comparisons with EM simulation and circuit simulation for the device under consideration are achieved.

• Proceedings of the KIEE Conference
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• 2001.11a
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• pp.96-99
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• 2001

In this paper, we present the simulation results of the multi-layer VCO(Voltage Controlled Oscillator), which is composed of the resonator, the oscillator and the buffer circuit. using EM simulator and nonlinear RF circuit simulator. EM simulator is used for obtaining the EM(Electromagnetic) characteristics of the conductor pattern as well as designing the multi-layer VCO. Obtained EM characteristics were used as real components in nonlinear RF circuit simulation. Finally the overall VCO was simulated using the nonlinear RF circuit simulator. The material for the circuit pattern was Ag and the dielectric was DuPont 951AT, which will be applied for LTCC process. The structure is constructed with 4 conducting layer. Simulated results showed that the output level was about 4.5[dBm], the phase noise was -104[dBc/Hz] at 30[kHz] offset frequency, the harmonics -8dBc, and the control voltage sensitivity of 30[MHz/V] with a DC current consumption of 9.5[mA]. The size of VCO is $6{\times}9{\times}2mm$(0.11[cc]).

• Journal of Advanced Information Technology and Convergence
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• v.10 no.1
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• pp.37-43
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• 2020

This paper presents analysis of passive metal interconnection of the LNA block in CMOS integrated circuit. The performance of circuit is affected by the geometry of RF signal path. To investigate the effect of interconnection lines, a cascode LNA is designed, and circuit simulations with full-wave electromagnetic (EM) simulations are executed for different positions of a component. As the results, the position of an external capacitor (C_ex) changes the parasitic capacitance of electric coupling; the placement of component affects the circuit performance. This analysis of interconnection line is helpful to analyze the amount of electromagnetic coupling between the lines, and useful to choose the signal path in the layout design. The target of this work is the RF LNA enabling the seamless connection of wireless data network and the following standards have to be supported in multi-band (WCDMA: 2.11~ 2.17 GHz, CDMA200 1x : 1.84~1.87 GHz, WiBro : 2.3~2.4GHz) mobile application. This work has been simulated and verified by Cadence spectre RF tool and Ansoft HFSS. And also, this work has been implemented in a 0.13um RF CMOS technology process.

• Journal of the Semiconductor & Display Technology
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• v.20 no.4
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• pp.68-71
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• 2021

In this paper, GaN-SBD devices with excellent breakdown voltage and frequency characteristics for use in high-power microwave wireless power transmission has been modeled for PSpice circuit simulation. The RF-DC conversion circuits were simulated and compared with a commercial Si-SBD device. Although the modeled GaN-SBD devices had lower RF-DC conversion efficiency compared to Si-SBD at 2.4 and 5.8 GHz, it was confirmed through PSpice circuit simulations that they can be used sufficiently according to the required application circuit in a high power situation.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.3
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• pp.416-423
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• 2012

Using Ansoft HFSS(High Frequency Structure Simulator) and Serenade(circuit simulator), multilayer LPF and RF diode switch for GSM were designed. Diodes were transformed the inductor and capacitor in Tx and Rx for the simulation of equivalent circuit, respectively. In particular, the design of the simulation for multilayer RF diode switch was carried out with considering the variance of device and contraction percentage.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.11 no.6
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• pp.976-983
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• 2000

In this paper, Bridcage type RF coils used widely as RF coils for MRI and its applicable type, spiral type RF coil are analyzed and designed using FDTD method. In low tesla (IT, 1.5T) MRI system, several tools have been used for the analysis and design of the RF coils for MRI. This includes, so-called, LC equivalent circuit method for predicting the resonance frequency of the coil and the Biot-Savart law to determine the field distribution within the coil. Both of the circuit analysis and Biot-Savart law are low frequency techniques. Therefore, at high frequency applications, the circuit model approximation breaks down because the coil geometry is a significant fraction of the wavelength. In this paper, we analyzed and designed RF coils for 3T MRI using FDTD method. This method is a full wave analysis and very accurate at low and high frequencies. Also, this RF coils are actually fabricated and FDTD models of RF coils for MRI are proven.

• JSTS:Journal of Semiconductor Technology and Science
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• v.11 no.3
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• pp.198-206
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• 2011

This paper presents a new programmable compensation circuit (PCC) for a System-on-Chip (SoC). The PCC is integrated with $0.18-{\mu}m$ BiCMOS SiGe technology. It consists of RF Design-for-Testability (DFT) circuit, Resistor Array Bank (RAB) and digital signal processor (DSP). To verify performance of the PCC we built a 5-GHz low noise amplifier (LNA) with an on-chip RAB using the same technology. Proposed circuit helps it to provide DC output voltages, hence, making the RF system chain automatic. It automatically adjusts performance of an LNA with the processor in the SoC when it goes out of the normal range of operation. The PCC also compensates abnormal operation due to the unusual PVT (Process, Voltage and Thermal) variations in RF circuits.

• 한국정보통신설비학회:학술대회논문집
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• 2007.08a
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• pp.27-30
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• 2007

This paper deals with an equivalent circuit model for RF passive components. Rational functions are obtained from the frequency responses of EM simulation by using Foster canonical partial fraction expressions. The Vector Fitting(VF) and the Adaptive Frequency Sampling(AFS) scheme are also implemented to obtain the rational functions. A passivity enforcement algorithm is applied to ensure the stability of the equivalent circuit model. In order to verify the schemes, S parameters of the equivalent circuit model is compared to those of EM simulation in case of the microstrip line structure with 3 slots in ground.

• Journal of The Institute of Information and Telecommunication Facilities Engineering
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• v.8 no.1
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• pp.1-5
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• 2009

In this paper, we propose a method that applies Vector Fitting (VF) technique to the equivalent circuit model for RF passive components. These days wireless communication system is getting smaller and smaller. So EMI/EMC is an issue in RF. We can solve PI/SI (Power Integrity/Signal Integrity) that one of EMI/EMC problem apply IFFT for 3D EM simulation multiple with input signal. That is time consuming task. Therefore equivalent circuit model using RF passive component is important. VF schemes are implemented to obtain the rational functions. S parameters of the equivalent circuit model is compared to those of EM simulation in case of the microstrip line structure.

• 한국정보통신설비학회:학술대회논문집
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• 2009.08a
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• pp.281-284
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• 2009

In this paper, we propose a method that applies Adaptive Frequency Sampling(AFS) technique to the equivalent circuit model for RF passive components. Thes days wireless communication system is getting smaller and smaller. So EMI/EMC is an issue in RF. We can solve PI(Power Integrity)/SI(Signal Integrity) that one of EMI/EMC problem apply IFFT for 3D EM simulation multiple with input signal. That is time comuming task. Therefore equivalent circuit model using RF passive component is important. AFS schemes are implemented to obtain the rational functions. S parameters of the equivalent circuit moldel is compared to those of EM simulation in case of the microstrip line structure.