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An Analysis of RF-DC Converter Circuits with GaN Schottky Barrier Diodes  

Son, Myung Sik (Department of Electronic Engineering, Sunchon National University)
Publication Information
Journal of the Semiconductor & Display Technology / v.20, no.4, 2021 , pp. 68-71 More about this Journal
Abstract
In this paper, GaN-SBD devices with excellent breakdown voltage and frequency characteristics for use in high-power microwave wireless power transmission has been modeled for PSpice circuit simulation. The RF-DC conversion circuits were simulated and compared with a commercial Si-SBD device. Although the modeled GaN-SBD devices had lower RF-DC conversion efficiency compared to Si-SBD at 2.4 and 5.8 GHz, it was confirmed through PSpice circuit simulations that they can be used sufficiently according to the required application circuit in a high power situation.
Keywords
Microwave; Wireless Power Transmission System; RF-DC Converter; Schottky Barrier Diode; GaN;
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